Arc filament type ion plating device
High-speed formation of a dense oxide film with a thickness of up to 10 μm. Equipped with a newly developed ionization mechanism, a CVD alternative high-density ion plating device.
High-speed formation of dense and highly plasma-resistant yttria and SiC films. Achieves a denser film quality at lower temperatures than CVD and spray methods through a reactive process using high-density plasma. Realizes a clean film formation process applicable to semiconductor-related components. Easy maintenance and low cost due to the PVD method. High-speed formation of insulating films (oxide films and carbide films). High-speed formation of dense thick films. Overcomes the weaknesses of conventional ion plating methods. A state-of-the-art PVD system for creating new surface functionalities.
basic information
High-speed formation of reaction films using stable evaporation of various materials by an electron gun and high-density plasma generated by a new ionization mechanism. Various generated films: Hard oxidation-resistant film: SiC Plasma-resistant film: Y₂O₃ Hard nitride film: TiN, CrN, TiC Hard oxide film: Al₂O₃ Coating equipment for new functional surface treatments, from surface treatment films for semiconductor manufacturing equipment parts to oxidation-resistant coatings for precision molds.
Price information
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Applications/Examples of results
Mold surface treatment Aspheric lens: SiC film Semiconductor components Tools: SIC Y²O³
