Ittria Coating Device (AF-IP Device)
A yttrium (Y2O3) film with excellent plasma resistance is formed using the PVD method. A thick film (10μm) is achieved with a newly developed ion plating method.
A dense oxide film with a thickness of 10 μm is formed at low temperatures using a newly developed arc filament-type ion plating method. This method enables the deposition of yttria films with excellent plasma resistance, suitable for semiconductor manufacturing equipment components. A simple process using ion plating achieves a dense film quality. Not only yttria films but also various reactive films such as SiC, TiC, and CrN can be formed from solid metal materials. The uniquely developed ion plating method opens up new applications for surface treatment.
basic information
Stable reaction film formation (nitride, oxide, and carbide films) is achieved through the evaporation of various materials using an electron beam and an arc filament ionization method. The film deposition rate is controlled solely by the flow rate of the reactive gas. The latest deposition processes are provided by simple and highly reliable hardware. Comprehensive deposition processes: - Plasma-resistant yttria film (10μm) - Oxidation-resistant hard film SiC (7μm) Other conventional hard films: TiN, TiC, CrN Other deposition support available.
Price information
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Applications/Examples of results
Ittria Coating - Surface treatment of semiconductor manufacturing equipment parts - Heat-resistant parts surface treatment SiC Coating - Surface treatment of semiconductor manufacturing equipment parts - Precision molds - Oxidation-resistant surface treatment
