Demonstration of the load lock type sputtering device (single wafer transport type) is currently in progress.
From discrete components to advanced devices, from R&D to mass production. A compact, high-quality, multi-purpose CtoC type sputtering system.
A load-lock type sputtering device based on single-sheet substrate transport, sharing the process chamber and transport mechanism with a higher-end model (multi-chamber type). Capable of meeting high-level film quality requirements for mass production and prototyping of various ICs (discrete ICs, custom ICs, compounds). Proven track record in the development of next-generation devices (ferroelectric film development, oriented nitride film formation) in both software and hardware. Achievements include AlN films for UV-LED templates, oxide films for sensors, highly uniform electrode films, thin-film heaters, ferroelectric (PZT) films, and many others.
basic information
A sputtering device compatible with 200mm wafers, based on one load lock chamber and one sputtering chamber. The substrate transport is primarily a single wafer (CtoC) type, with CtoC transport via trays depending on the size and shape of the substrate. The cathode can be selected from a large single-source type or a multi-source type. Substrate heating options include high temperature and cooling. Sputtering can be selected from DC, RF, or reactive sputter mode using pulsed DC. It is capable of forming dense oxide films and is suitable for gate oxide films of compound semiconductors.
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Applications/Examples of results
※Semiconductor-related - Research and prototype mass production of compound semiconductors - Formation of LED electrodes (front, back, reflective film) - Formation of discrete IC electrodes (front, back) Creation of AlN templates for UV-LEDs MEMS and sensor-related - Formation of sensor films (oxide films) - Formation of thin film heaters - Formation of ferroelectric films
