Single Wafer Plasma Ashing System (SWP Series)
Damage-free, high throughput, multi-purpose compatible high-end devices, compound semiconductors, and MEMS. Extensive track record and comprehensive support. New type now available.
Achieved damage-less ashing using downflow plasma while eliminating charge-up damage. High throughput is realized through high-rate ashing with surface wave plasma (SWP) and an ashing chamber equipped with two rooms. In addition to ashing, the RIE chamber enables the removal of special resists and organic films, as well as the removal of hardened resists after ion implantation. It achieves both the removal of hardened resist on the surface and damage-less ashing of the underlying resist. The adoption of a compact single-wafer load lock chamber and twin-hand robots allows for a compact installation size. Proven capability to handle not only standard wafers but also special substrates such as wafers thicker than 1 mm and rectangular substrates. A versatile single-wafer etching and ashing device.
basic information
8-inch compatible single-wafer plasma ashing system. Equipped with two ashing chambers featuring high-density surface wave plasma sources. Includes one single-wafer load lock chamber. Multi-chamber type. Achieves high throughput with compact installation dimensions. Not just for standard ashing processes, but also supports a wide range of applications and processes such as multi-step ashing, various organic film etching, and etching/ashing combined systems, thanks to a rich array of options (RIE chamber, ICP chamber, heating and cooling chambers, additional gas lines).
Price information
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Delivery Time
Model number/Brand name
SWP Series
Applications/Examples of results
Mass production of compound semiconductors Mass production of magnetic devices Mass production of high-density packaging substrates Mass production of system LSI
