SiC coating device (AF-IP device)
A dense SiC (silicon carbide) film with excellent wear resistance and oxidation resistance is formed using PVD. A thick film (7 μm) is formed using a new ion plating method.
Achieved SiC film formation using a PVD method that was not previously available through a newly developed arc filament-type ion plating method. Adopted a new film formation technology that enables the formation of dense SiC films with excellent wear resistance and oxidation resistance at low temperatures below 400°C. The ion plating method, using solid silicon as the starting material, realizes a simple and environmentally friendly clean process with low environmental impact. The new film formation equipment offers high control over film thickness and quality, and excels in exhaust gas treatment, maintenance, installation area, and running costs compared to CVD.
basic information
An ion plating device based on the deposition of solid silicon using an electron gun. It realizes a reactive process between silicon and the reaction gas through a simple ionization mechanism that can form high-density plasma. The substrate mounting method and fixtures are specially designed according to the shape of the substrate and the purpose of film formation. It is also possible to perform full-area film formation on three-dimensional substrates and mask film formation. A clean and easy-to-operate fully automatic ion plating device.
Price information
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Applications/Examples of results
Precision mold coating. Lens mold coating. Fixture coating for semiconductors. Coating for semiconductor manufacturing equipment parts. Tooling coating.
