HCD type high-density plasma etching device
Achieving high-density plasma with a simple mechanism. Compatible with substrates from wafers to 1 m². Damage-free etching of Si-based materials, metals, organic films, and various thin films.
Achieves a plasma density that is an order of magnitude higher compared to conventional capacitively coupled plasma etching devices. High-precision etching is possible solely through innovations in the electrode structure, without using high-frequency antennas or magnets. It also has high hardware compatibility with conventional etching devices (CCP type and ICP type), contributing to low cost, high reliability, and operational efficiency. Capable of etching not only wafer-level substrates but also large substrates. A new type of high-density plasma etching device that can smoothly accommodate the increase in substrate size.
basic information
A high-density plasma etching device with a simple structure. It is easy to accommodate larger diameters and is suitable for processing wafers over 200 mm and rectangular substrates of A4 size. The substrate size is assumed to be around 1 m², and it supports various processes such as etching of small to medium-sized display panels, large photomasks, ashing, cleaning of high-density printed circuit boards, discarding, and hydrophilization treatment.
Price information
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Applications/Examples of results
Etching of wafers over 200 mm, Si, Si nitride film, oxide film, metal film, organic film, photoresist removal, photo mask etching, large high-density printed circuit board disassembly, cleaning, hydrophilization treatment.
