Cu etching compatible high-density plasma etching device

Equipped with a new plasma source HCD (hollow cathode discharge) electrode, capable of etching various metals and Cu thin films. A new type of etching device that also facilitates large-area processing.

Equipped with a newly developed plasma source HCd (hollow cathode discharge) type electrode. Achieves a plasma density that is an order of magnitude higher than conventional electrodes with a simple k structure that is free of magnetic fields and antennas. Supports etching of not only various metals but also difficult-to-etch materials such as Cu thin films with uniquely developed high-density plasma and proprietary processes. The newly developed HCD type head allows for easy scale-up and enables high-precision etching of rectangular substrates and large substrates. Supports metal etching of 300 mm wafers, stacked substrates, and substrates up to 1 m². A new type of etching device that covers semiconductor peripheral materials (photo masks, high-density mounting substrates) that have seen increasing demand in recent years, breaking away from conventional plasma etching methods.

basic information

A high-density plasma etching device that is compatible with the conventional etching devices "SERIO" and "EXAM" in its basic configuration. The chamber structure, exhaust system, and power configuration are also compatible with the conventional etching device "SERIO," and it can be upgraded to support new processes such as Cu etching through electrode replacement. A C-to-C type is also available for large substrates. It supports difficult etching processes such as Cu films and is suitable for a wide range of applications including various substrate wafers (Si, glass, ceramics), FPDs, high-density printed circuit boards, and photomasks.