Achieved a correlation R²=0.96 for the measured long SEM data. Quantitatively observed a wide range of chip pattern size variations as changes in image brightness.

This is a non-destructive, ultra-fast inspection module that monitors the variation in pattern dimensions on wafers. It visualizes the fluctuations in pattern size, which were traditionally measured over time using a scanning electron microscope (SEM), as brightness information in macro images. It allows real-time monitoring of "device-specific variations" and "temporal changes" during the exposure and etching processes. This significantly contributes to improving the yield of next-generation devices as miniaturization progresses. 【Technical Features】 - Confirmed a very high correlation (R²=0.964) with length measurement SEM data. - Provides a comprehensive understanding of the distribution across the entire wafer, not just specific areas within the chip. - High-precision observation using an optical system optimized for telecentricity. *For more details, please refer to the catalog or feel free to contact us. *We are currently accepting requests for evaluations of the actual device. The first sample evaluation will be provided free of charge.

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