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61～84 item / All 84 items
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Aluminum oxide (Al2O3) target
For the manufacturing of insulating films in chip production, as well as the production of other high-performance electronic components, sensors, solar panels, and surface modification of optical devices such as displays!
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Nickel-Copper (NiCu) Target
Alloy materials that can be used for semiconductor integrated circuits (VLSI), flat panel displays, optical discs, surface coatings, etc.
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Nickel-chromium (NiCr) target
Nickel-chromium that can be used for thin film formation, microelectronics manufacturing, Low-E films for architectural glass, liquid crystal panels, and recording media!
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Nickel-Vanadium (NiV) Target
Contributing to the manufacturing of integrated circuits (ICs) and the semiconductor and microelectronics industry! Nickel-vanadium materials capable of depositing high-quality thin films.
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Tungsten Titanium (W-Ti) Target
Tungsten-titanium materials that can be used as diffusion barriers and adhesives for metal wiring in microchip gate circuits.
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Indium Antimonide (IAO) Target
IAO materials are widely used in anti-static coatings and paints, significantly reducing static electricity accumulation and protecting the safety of equipment and people.
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Aluminum Neodymium (Al-Nd) Target
Aluminum neodymium materials suitable for wiring of flat panel displays, magnetic recording media, and magnetic sensors.
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Aluminum Titanium (Al-Ti) Target
Aluminum Titanium (Al-Ti) Target
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Aluminum Silicon (Al-Si) Target [Alloy Target]
In adjustment.
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SiO2 (quartz) ring
SiO2 (quartz) ring
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C18200(Cu) backing plate
Used as a backing plate, alloy material with hardness ≧ 1/2H!
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C18150(Cu) backing plate
Used as a backing plate, alloy material with hardness ≧ 1/2H!
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ITO (90:10; 95:5; 97:3...)Low-density ITO Target
Oxides that can be used as transparent electrodes and to control pixels without compromising the visual information of the screen!
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Zirconium (Zr) target
Zirconium (Zr) Target Purity>3N5 Hf<0.2wt% In Shipping...
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Copper (Cu) target
Copper (Cu) target Purity: 3 N7~6N Crystal 40-80 um C18200 C18150 Handling
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Titanium Ti Target Purity≧5N5
Titanium Ti Target, Each type purity is possible
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Nickel (Ni) target Purity>4N5
Nickel (Ni) target Purity2N~4N5
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Hafnium (Hf) target
Hafnium (Hf) target Purity>4N5
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Chromium (Cr) target
Chromium (Cr) target Purity>3N8
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Tantalum (Ta) Target
Tantalum (Ta) Target Purity>5N
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Tin (Sn) target
Tin (Sn) target Purity≧4N
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Niobium (Nb) target
Niobium (Nb) target Purity≧3N5
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Tungsten (W) target
Tungsten (W) target Purity>5N
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Sputtering
Preventing oxidation using a vacuum device is important, and factors such as the dimensional tolerances of the target material are crucial for efficiency!
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