[Analysis Case] LSI・Memory
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[Analysis Case] LSI・Memory
We will introduce examples of LSI and memory analysis.
31~60 item / All 129 items
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Large-diameter imaging SIMS using RAE detectors
SIMS: Secondary Ion Mass Spectrometry
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[Analysis Case] TMAH Analysis Case in Si-containing Solution by IC Method
The measurement of amines is possible using the IC (Ion Chromatography) method.
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[Analysis Case] Analysis of Organic Acids in Solution by IC Method
Qualitative and quantitative analysis of organic acids in solution is possible.
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[Analysis Case] Evaluation of Copper (Cu) Oxide Film Thickness: Differences Due to Storage Environment
It is possible to capture molecular information of inorganic substances in the depth direction using TOF-SIMS.
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[Analysis Case] Evaluation of Layer Structure and Film Thickness of Naturally Oxidized Copper (Cu) Surface Film
Depth-direction state evaluation using TOF-SIMS.
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Precautions for Low-Temperature Photoluminescence Measurement
Photoluminescence method
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[Analysis Case] Removal of Organic Contaminants by Etching
We will remove surface contamination and conduct an evaluation using XPS.
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Valence evaluation of metal oxides by chemical shift
XPS: X-ray Photoelectron Spectroscopy
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[Analysis Case] Atomic Column Observation of Strontium Titanate SrTiO3
High-resolution STEM observation using Cs-corrected STEM
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Extreme point measurement
XRD: X-ray diffraction method
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Types and Characteristics of Electron Diffraction
TEM: Transmission Electron Microscopy
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Detection of trace components by P&T of volatile organic compounds (VOCs)
GC/MS: Gas Chromatography-Mass Spectrometry
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[Analysis Case] Evaluation of Nitrogen Components in Solution
It is possible to analyze inorganic nitrogen by form.
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[Analysis Case] Surface Contamination Assessment of Si Wafers Stored Using TOF-SIMS
Evaluation of contamination and oxidation of Si wafers after removing the oxide film with hydrofluoric acid treatment.
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[Analysis Case] Evaluation of Nickel Plating Peel-off Surface by TOF-SIMS
Investigation of the causes of coating peeling and poor adhesion through TOF-SIMS analysis.
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High-precision quantitative evaluation of impurities in SiGe.
SIMS: Secondary Ion Mass Spectrometry
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[Analysis Case] Evaluation of the Condition of Foreign Matter with Surface Oxidation Film
Evaluation of aluminum hydroxide Al(OH)3 and aluminum oxide Al2O3 is possible.
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[Analysis Case] Low-Temperature PL Spectrum of Si After Ion Implantation Annealing Treatment
It is possible to confirm the recovery of crystallinity due to irradiation defects and annealing.
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[Analysis Case] Analysis of Corrosive Components in Indoor Atmosphere
It is possible to analyze ion components in the atmosphere using the impinger collection method.
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[Analysis Case] Composition and Thickness Evaluation of Ultra-Thin SiON Films
Estimation of film thickness using the average free path of photoelectrons.
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Improvement of depth resolution by vertical incidence method.
SIMS: Secondary Ion Mass Spectrometry
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Distortion evaluation using SEM equipment
EBSD: Electron Backscatter Diffraction
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[Analysis Case] Quantification of Interstitial Atom Concentration in Silicon Single Crystals
Quantitative analysis of interstitial oxygen and carbon concentration non-destructively using infrared absorption method.
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Pre-treatment and measurement under high purity atmosphere.
XPS: X-ray photoelectron spectroscopy, etc.
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FIB low acceleration processing
FIB: Focused Ion Beam Processing
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[Analysis Case] Composite Analysis of White Powder
Identification of powders by FT-IR analysis and XRF analysis.
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[Analysis Case] Evaluation of SiON Film by SIMS
Evaluation of nitrogen in SiON with a film thickness of approximately 1 nm is possible.
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[Analysis Case] Evaluation of the Depth Distribution of B near the Si Surface using SIMS
High-precision B profile analysis through sample cooling.
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[Analysis Case] Evaluation of the Diffusion Layer Structure of Bipolar Transistors
Clearly observable structure of the diffusion layer including pn junction determination.
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[Analysis Case] Structural Evaluation of Fine Transistors
High-resolution TEM observation using Cs-corrected TEM
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