[Analysis Case] LSI・Memory
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[Analysis Case] LSI・Memory
We will introduce examples of LSI and memory analysis.
121~137 item / All 137 items
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[Analysis Case] Measurement of Partial Density of States of GaN
Information about valence bands and gap states can be obtained by element.
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[Analysis Case] STEM, EBSD Image Simulation for Polycrystalline Structure Analysis
Evaluation of crystal forms using simulations.
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[Analysis Case] Analysis of α-Alumina (α-Al2O3) by TDS
Thermal desorption gas analysis of ceramics
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[Analysis Case] Simulation of Impurity Diffusion in Silicon Crystals
It is possible to determine the diffusion pathways and barriers through simulation.
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[Analysis Case] Mechanical Property Evaluation Simulation Using Molecular Dynamics Calculations
It is possible to analyze the deformation behavior of nanomaterials in response to environmental changes (pressure and temperature).
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[Analysis Case] Depth Direction Analysis of Components in SiON Ultra-Thin Films
It is possible to capture molecular information of inorganic substances in the depth direction using TOF-SIMS.
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[Analysis Case] Simultaneous Qualitative Analysis of Inorganic and Organic Contaminants/Adhesives on Wafers
Simultaneous measurement of inorganic and organic components in minute specific areas.
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[Analysis Case] Evaluation of Metal Impurities in the Metal Film and Interface of the Device
Impurities in films and interfaces such as plating can be evaluated using TOF-SIMS.
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[Analysis Case] Composition Analysis of Particles on a Wafer
Shape observation and simple quantitative analysis using SEM-EDX.
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[Analysis Case] Evaluation of Composition Distribution of Ultrathin Films by ARXPS (C0550)
It is possible to evaluate the depth profile of ultra-thin films on the substrate!
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[Analysis Case] Theoretical Calculation of Fe/MgO/Fe Junction System (C0583)
Investigation of TMR ratio and the behavior of spin and charge in the Fe/MgO/Fe junction system using first-principles calculations with the NEGF method!
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[Analysis Case] SEM Observation of Wide-Area Cross-Section Using Xe-PFIB
Observation of cross-sections with an accuracy of several tens of nanometers and a size of several hundred micrometers is possible!
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[Analysis Case] Evaluation of DC Voltage Dependence of Carriers in Semiconductors
We will introduce an analysis case using Si samples with known carrier concentration!
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[Analysis Case] Precursor Adsorption Simulation in ALD Film Formation
Information on the activation energy and reaction heat during precursor adsorption on the substrate can be obtained!
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[Analysis Case] HF Etching Simulation of a-SiO2 Film
Effective for understanding surface reactions at the atomic level in the etching process.
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[Analysis Case] Vapor Pressure Calculation of Ga-containing Precursor by Molecular Dynamics Simulation
Effective for predicting the vapor pressure of metal complexes used as precursors in ALD and CVD!
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[Analysis Case] Contamination Analysis in Vacuum Equipment
It is possible to evaluate the causes of contamination in vacuum devices, such as oil backs and grease!
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