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751~780 item / All 788 items
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[Analysis Case] Comprehensive Evaluation of Organic EL Displays
We evaluate by combining various methods such as structural understanding, material assessment, and identification of deterioration causes.
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[Analysis Case] Evaluation of the Interface between the Alq3 Layer and the Emission Layer of Organic EL Devices
Degradation assessment by depth profiling using TOF-SIMS.
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[Analysis Case] Evaluation of pn Junction and Grain Structure of CIGS Film
Electron beam induced current method and crystal orientation analysis using SEM.
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[Analysis Case] Evaluation of Interdiffusion Between Layers of CIGS Solar Cells Using SIMS
It is possible to achieve high-precision measurements that are not affected by surface irregularities.
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[Analysis Case] Evaluation of Crystal Grains in CIGS Film
Crystal orientation analysis using SEM.
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[Analysis Case] Cross-Section Observation of Organic Thin-Film Solar Cells
Using low acceleration voltage STEM, slight density differences in organic films can be observed.
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[Analysis Case] Comprehensive Evaluation of Lithium-Ion Secondary Battery Materials
We will conduct an evaluation that combines various methods to solve the problem.
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[Analysis Case] High-Sensitivity Analysis of Light Elements in Semiconductor Substrates Using SIMS
SIMS analysis allows for the evaluation of elements such as H, C, N, O, and F down to levels below 1 ppm.
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[Analysis Case] Observation of Crystal Structure of Multicomponent Metallic Nanoparticles by TEM
Ultra-high resolution STEM observation of InGaZnO4 particles
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[Analysis Case] Evaluation of the State of the Electrode/Organic Layer Interface in Organic EL Devices
The process will be carried out from pretreatment to XPS measurement under an inert gas atmosphere.
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[Analysis Case] Cross-sectional Observation of TEM/SEM Organic EL and Gate Oxide Film
Low-acceleration STEM observation allows for contrast even in low-density membranes.
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[Analysis Case] Wide-Area Cross-Section Observation of Bumps
Wide-area observation of micro-specific locations is possible through cross-section preparation using ion polishing.
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[Analysis Case] Discrimination between Anatase and Rutile Types of Titanium Dioxide
TEM-EELS enables elemental identification and chemical state analysis in micro-regions.
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[Analysis Case] Contamination Assessment of Si Wafer Bevel Area
It is possible to evaluate both metal components and organic components simultaneously.
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[Analysis Case] Measurement of Film Density and Film Thickness of Organic EL Device Stacked Films
X-ray reflectivity measurement (XRR) allows for non-destructive analysis of film thickness and density.
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[Analysis Case] Evaluation of Composition and Impurity Distribution of ZnO Films by SIMS
Visualization of in-plane distribution through imaging SIMS analysis.
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[Analysis Case] Evaluation of SiON Film by SIMS
Evaluation of nitrogen in SiON with a film thickness of approximately 1 nm is possible.
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[Analysis Case] Evaluation of B Penetration Amount from SSDP-SIMS Gate to Substrate
Measurement avoiding the effects of surface irregularities and high concentration layers using SSDP-SIMS.
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[Analysis Case] Component Analysis of Organic EL Devices
TOF-SIMS component analysis of slope-polished organic multilayer structure samples.
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[Analysis Case] Distortion Analysis in the Field of Element Separation
NBD: Strain analysis of micro-regions using Nano Beam Diffraction.
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[Analysis Case] Evaluation of Ultra-Shallow Implant Profiles by SIMS
Evaluation of dopant distribution and junctions is possible even in extremely shallow regions.
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[Analysis Case] High-Precision Analysis of Ultra-Shallow Dopant Distribution Using SIMS
Can be evaluated with high reproducibility.
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[Analysis Case] Structural Observation of the Hall Side Wall ONO Film
Planar TEM observation of specific areas using the FIB method.
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[Analysis Case] Structural Analysis of Silicon Dioxide
Structural analysis of amorphous silicon dioxide (SiO2) using Raman scattering spectroscopy.
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[Analysis Case] Evaluation of the Depth Direction State of Stainless Steel Passive Film
Waveform analysis and evaluation of the depth distribution of bonding states by Ar sputtering.
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[Analysis Case] Composition and Thickness Evaluation of Ultra-Thin SiON Films
Estimation of film thickness using the average free path of photoelectrons.
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FIB low acceleration processing
FIB: Focused Ion Beam Processing
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Pre-treatment and measurement under high purity atmosphere.
XPS: X-ray photoelectron spectroscopy, etc.
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Spherical aberration correction function
TEM: Transmission Electron Microscopy
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Distortion evaluation using SEM equipment
EBSD: Electron Backscatter Diffraction
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