Arnea Laboratory Co., Ltd. wafer thickness measurement device
The thickness of the silicon substrate is measured in real-time with high sensitivity and non-contact using a wavelength scanning method.
- Non-contact measurement of wafer thickness such as silicon and indium phosphide - Measurement possible in harsh environments, such as real-time measurement during wet etching - High sensitivity measurement with a precisely controlled wavelength-variable light source - High reproducibility with a measurement accuracy of less than 0.1μm - Customizable for measurement targets, sizes, and shapes other than silicon
basic information
Overview of the Device Configuration - The wafer thickness measurement device consists of a precisely wavelength-controlled tunable light source, a focusing sensor, and a photodetector (PD). - The light from the focusing sensor is reflected off the surface and back surface of the measurement sample, and then passes through the focusing sensor again to generate interference waves at the PD.
Price range
Delivery Time
Model number/Brand name
SIT-200
Applications/Examples of results
- Measurement of wafer thickness after polishing and post-process - Measurement of wafer thickness during the etching process
