Power Device "Wafer-Level Burn-In"
Protect each circuit with complete hardware! Supports simultaneous burn-in of up to 6 wafers.
"Wafer level burn-in" is equipment that allows for burn-in testing of GaN and SiC devices at the wafer level, significantly reducing the inspection loss of power modules. It can accommodate simultaneous burn-in of up to 6 wafers. Additionally, independent burn-in condition settings are possible for each fixture. Complete hardware protects each circuit. 【Features】 - Suitable for burn-in of GaN and SiC wafers - Independent burn-in condition settings for each fixture - Allows simultaneous power-on and burn-in of all chips on the wafer - HTGB voltage ±75V, HTRB voltage 2000V (upgradeable) - Supports Igss, Idss, Vth, Idson testing - Temperature range RT-200C *For more details, please refer to the PDF document or feel free to contact us.
basic information
Parameter Specification Applicable Products GaN, SiC Wafer Applicable Packaging 4-inch, 6-inch Wafer Burn-in Parameters HTGB, HTRB Test Parameters Igss, Idss, Vth System Size (mm) 2100(W) X 1900(H) X 1800(D) System Power Consumption <32 kW Nitrogen Protection >0.6 mPa Temperature Range Room Temperature - 175 ℃ Voltage Range Gate ±75 V, Source 2000 V System Channels 720 System Layers 6 layers Current/Voltage Overshoot No overshoot in any case MES Docking Compatible with MES docking *For more details, please refer to the PDF document or feel free to contact us.
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For more details, please refer to the PDF document or feel free to contact us.
