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★☆★☆ MiniLab Series Flexible Thin Film Experimental Device ★☆★☆
The MiniLab thin film experimental device allows for the construction of a compact, semi-customized system that eliminates waste by incorporating the optimal components and control modules according to the required film formation methods and materials from a wide range of options. By equipping a modular control unit with a Plug & Play feel, the application range expands, enabling various thin film process experiments. 【MiniLab Thin Film Experimental Device Configuration Modules】 ◎ Manufacturing Range Resistance heating deposition (TE), organic deposition (LTE), electron beam deposition (EB), sputtering (SP), CVD, dry etching 【Small Footprint & Space Saving】 - Single rack type (026): 590(W) x 590(D)mm - Dual rack type (060): 1200(W) x 590(D)mm - Triple rack type (125): 1770(W) x 755(D)mm 【Excellent Operability & Intuitive Operation Screen】 Windows PC or 7” touch panel. Easy operation that does not require advanced skills, with maximum consideration for safety. All operations except for internal component adjustments and material exchanges in the chamber are performed via the PC/HMI screen.
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Wafer Annealing Equipment [ANNEAL] Max 1000℃ APC Automatic Pressure Control MFC x3 System Compatible with Φ4 to 6 inch Substrates
Max 1000℃, MFC up to 3 systems, APC pressure control, compatible with substrates from 4" to a maximum of 6", high vacuum annealing device (<5 × 10-7 mbar) [ANNEAL] is a research and development annealing device capable of high-temperature heat treatment of substrates such as wafers in a stable process atmosphere. It allows high-temperature processing up to 1000℃ using a heating stage installed in a high vacuum water-cooled SUS chamber. A heat shield is installed inside the chamber to ensure safety through interlock. The mass flow controller can be expanded to a maximum of 3 systems, enabling firing operations with precisely adjusted process gas pressure (APC automatic process control system option). Additionally, there are many options available, including a front view port, dry scroll pump, special substrate holder, and additional thermocouples. The heating stage inside the chamber has three variations depending on the process gas atmosphere and treatment temperature: - Halogen lamp heater: Max 500℃ - C/C composite heater: Max 1000℃ (in vacuum, inert gas only) - SiC coating heater: Max 1000℃ (vacuum, inert gas, O2)
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☆★☆★【nanoCVD-WGP】Wafer-scale graphene/carbon nanotube synthesis device ☆★☆★
Plasma CVD equipment compatible with wafer sizes Φ3 inch and Φ4 inch. Rapid synthesis of clean, high-quality graphene while suppressing impurities. Usable with both thermal CVD and low to high temperature plasma CVD methods. The configuration can be customized according to requirements, including mass flow gas supply systems and substrate heating heaters. 【Example of equipment configuration】 - Substrate: Cu, Ni, etc. (film, foil) - Raw materials: CH4, C2H4, solids (PMMA), etc. - Process gases: H2, Ar, N2, etc. - Substrate size: Φ4 inch - 150W, 13.56MHz RF power supply - Substrate heating from 500℃ to Max 1100℃ - High precision process gas pressure APC control - Mass flow controller with a maximum of 4 channels
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[SH Substrate Heating High-Temperature Vacuum Hot Plate_Max 1100℃] for CVD and PVD Vacuum Thin Films
ThermoCera Japan has updated the latest catalog for substrate heating heaters, ideal for thin film experiments such as CVD and PVD, with ultra-high temperature substrate heating heaters ranging from 1 inch to 4 inches. ◉ Maximum operating temperature: 850°C (SH-IN), 1100°C (SH-BN) We also accommodate requests for customized products such as substrate holders, vertical lift mechanisms, substrate rotation mechanisms, and RF bias. Additionally, we offer 19-inch rack-mounted heater controllers in addition to traditional stationary models.
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★☆★☆【MiniLab-026/090】Glove Box Thin Film Experiment Device★☆★☆
Compact and space-saving! Ideal for organic thin film development, allowing seamless execution of all processes such as deposition, sputtering, and annealing within a glove box. In the development processes of organic EL, organic thin film solar cells, and graphene/2D materials (such as transition metal dichalcogenides and other two-dimensional layered inorganic nanomaterials), it is necessary to handle samples in an inert gas atmosphere isolated from oxygen and moisture. By housing a PCD/CVD chamber within the glove box, we achieve a "oxygen and moisture-free" experimental environment for organic film applications in a compact and space-saving setup. 【Features】 ◉ A series of processes such as PVD film deposition, spin coating, and hot plate baking can be performed seamlessly within the glove box without exposure to the outside air. ◉ Space-saving: The chamber does not protrude from the back, so it does not take up space. 【MiniLab Models】 ◉ MiniLab-026 (26ℓ volume): Metal/insulator/organic material deposition, sputtering, RF/DC etching, annealing ◉ MiniLab-090 (90ℓ volume): Metal/insulator/organic material deposition, sputtering, RF/DC etching, annealing
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★【Magnetron Sputtering Cathode】★ Thermosera Japan
High-efficiency magnetron sputtering cathode compatible with RF, DC, and pulse DC, capable of depositing metals, insulators, and other materials without impurities. It also excels in maintainability. 【Features】 - Compatible with high vacuum - Available in sizes Φ2 inch, Φ3 inch, Φ4 inch - Adopts a clamp ring type, eliminating the need for bonding - Excellent maintainability, allowing for easy target replacement - A wide range of options including shutters, chimney ports, gas injection, and high-strength magnets for magnetic materials - Compatible with various flange sizes 【Main Specifications】 ■ Compatible with RF, DC, and pulse DC ■ Target thickness: 1/16" to 1/4" ■ N-type coaxial connector ■ Water-cooled: 4ℓ/min, 0.35Mpa Φ6mm tube connection ■ Case material: SUS304 ■ Target clamp material: Al or SUS304 ■ Bellows (*Flexi-head type) material: SUS316 ■ Insulating material: PEEK/PTFE ■ Sealing material: Viton ■ High-strength magnet pack: NiFe
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◆HTE Heater◆ High Vacuum Crucible Heating Heater Max 1500℃
The HTE heater is a high-temperature heating heater for vacuum devices with a maximum operating temperature of 1500°C. It can evaporate materials with high evaporation temperatures, making it suitable for a wide range of applications as a vacuum high-temperature heater and deposition cell, from low-temperature organic deposition (up to 800°C) cells to high-temperature resistance heating deposition (up to 1500°C) MBE cells. Shutter actuators and water-cooled jackets are also available. The high-temperature heater specification above 800°C is designed with internal shielding, considering insulation and thermal shielding. 【Main Specifications】 ■ Maximum control temperature: 800°C or 1500°C ■ Operating environment: In vacuum or inert gas (*O2 up to 800°C) ■ Heater: Tungsten filament ■ Crucible volume: 1cc (maximum filling amount 1.5cc) ■ Crucible material: Alumina ■ Case material: SUS304 or Molybdenum ■ Thermocouple: K or C 【Options】 ⚫ Crucible material: PBN, Graphite, Quartz ⚫ Heater: NiCr wire, Kanthal wire (*for O2) ⚫ Crucible volume: 10cc (maximum filling amount 15cc) ⚫ Shutter: Pneumatic or motor-driven ⚫ Water-cooled jacket ⚫ Controller (for heater and shutter control)
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◾️◾️Vacuum Use 【CH Ultra High Temperature Cylindrical Heater】Max 1800℃ ◾️◾️
Vacuum Ultra-High-Temperature Cylindrical Heater Unit Maximum Temperature 1800℃ (Graphite, C/C Composite) We will manufacture according to your requested specifications. This is a cylindrical heating unit that can be applied in high vacuum for various purposes. Within the cylindrical heating range, we can custom-make for purposes such as heating crucibles containing samples, heating metal, ceramic, and wire-shaped samples, etc. ◎ Usable Environment: In vacuum, in inert gas, etc. ◎ Heating Element: Graphite, C/C composite heater, SiC coating, PG coating, tungsten, tantalum, etc. ◎ Manufacturing Range: Heater section (up to approximately Φ150 x 100mm), introduction flange, temperature control unit ◎ Applications: Sample heating in various vacuum device process chambers, discharge plasma generation unit thermal electron gun (Lab6), rapid heating of gas supply system piping (liquid rapid vaporization) We also offer custom specifications according to other requests. For details, please contact us.
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New feature "IntelliLink" remote software released for the ★IntelliLink★ nanoPVD film experimental device!
We have released dedicated remote management software "IntelliLink" for the nanoPVD-S10A magnetron sputtering system, the nanoPVD-T15A metal/organic film deposition system, and the nanoPVD-ST15A composite thin film experimental system. In addition to the control software "IntelliDep," which allows centralized management of equipment operation and film formation control via the included 7" touch panel, the new optional IntelliLink enables remote management from a Windows PC. With IntelliLink, almost all operations, except for the main controls of the equipment (vacuum pumping, vent operation, interlock monitoring), can be performed from the PC. (1) System live monitoring (equipment operation status monitor) - Chamber pressure, MFC flow rate settings - Film thickness display, settings, calibration - Stage rotation, heating, shutter opening and closing operations (2) Error analysis (3) Recipe creation, saving, uploading (4) Data logging, CSV format output → Data sharing with other devices ◉ Connect to the equipment's rear Ethernet port using the included USB cable.
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MiniLab-WCF Ultra High Temperature Wafer Annealing Furnace Max 2000℃_Dedicated for High-Temperature Wafer Sintering (6inch to 8inch)
Max 2000℃ Φ6〜8 inch wafer dedicated high-temperature annealing device, capable of small-scale production multi-atmosphere wafer annealing device. ◾️ Max 2000℃ ◾️ Effective heating range: Φ6〜Φ8 inch single wafer type or batch type (multi-stage 5 wafer cassette) ◾️ Heater control: 1 zone or 2 zones (cascade control) ◾️ Heater materials: ・C/C composite: Φ6〜Φ8 inch ・PG coating high-purity graphite: Φ6〜Φ8 inch ◾️ Operating atmosphere: ・Vacuum (1x10-2Pa), inert gas (Ar, N2) ◾️ PLC semi-automatic operation ・Automatic sequence control for vacuum/purge cycle and venting ・Fully automatic operation (optional) ・Touch panel operation, allowing centralized management without dispersed operations. ◾️ Process pressure control ・APC control (MFC flow or automatic opening adjustment valve PID loop control) ・Maximum 3 systems of MFC flow automatic control, or manual adjustment of float meter/needle valve ◾️ PLOT screen graph display, CSV data output
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High-Temperature Annealing Furnace ◉ Mini-BENCH-prism Semi-Automatic Ultra-High Temperature Experimental Furnace Max 2000℃
◉ Maximum operating temperature Max 2000℃ ◉ PLC semi-auto control A higher model of the tabletop Mini-BENCH with semi-auto control Automatically controls each process of "vacuum/purge cycle," "gas replacement," and "venting" Maximum operating temperature 2000℃ Semi-auto control ultra-high temperature experimental furnace (carbon furnace, tungsten metal furnace) Compact and space-saving experimental furnace ◉ Effective heating range (crucible dimensions) - Flat heater heating range: Φ2 inch to Φ6 inch - Cylindrical heater heating range: Φ30 to Φ80 x Depth Max 100(H) mm ◉ Up to 3 MFC systems for automatic flow control (or manual adjustment) ◉ APC automatic pressure control ◉ Ensures safety during operation Monitors abnormal cooling water, chamber temperature, and overpressure. Made of SUS, robust water-cooled chamber can be safely used even during continuous operation at maximum temperature. ◉ Compact and space-saving Width 603 x Depth 603 x Height 1,160 mm (*Installed inside rotary pump housing) Ultra-high temperature heating experiments for small samples in the laboratory, as well as various sample heating experiments for new material research and development, can be easily conducted with simple operations. The main unit is compact yet can be used for research and development in various fields.
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□■□■【Mini-BENCH】Ultra High Temperature Tabletop Experimental Furnace Max 2000℃ □■□■
Tabletop Small-Size Experimental Furnace - Space-Saving, Maximum Operating Temperature 2000℃ ◆ Equipment Configuration ◆ We will propose the desired configuration according to your budget and purpose. (A) Minimum Configuration: Chamber + Temperature Control Unit (B) Above Minimum Configuration (A) + Vacuum Exhaust System (Pump, Gauge, Valve, Vacuum Piping) ◉ Cylindrical Heater: For sintering samples in crucibles (for solid, powder, granule, and pellet-shaped samples) ◉ Flat Heater: For sintering Φ1" to Φ6" wafers and small chip samples ◆ Basic Specifications ◆ - Heater: C/C Composite (Carbon Furnace), Tungsten (Metal Furnace) - Insulation Material: Graphite Felt, Tungsten/Molybdenum - Temperature Control: Programmable Temperature Controller, C Thermocouple - Achievable Vacuum Level: 1x10-2 Pascal (*for an empty furnace) - Power Supply Specifications: AC200V 50/60HZ Three-Phase 6KVA - Cooling Water: 3L/min, 0.4Mpa 25-30℃ ◆ Control Box Specifications ◆ - Programmable Temperature Controller - DC Power Supply Unit or External Transformer Box - Current and Voltage Meters - Heater Circuit Trip Switch - Main Power Switch ◆ Options ◆ - Vacuum Exhaust System - Custom Crucibles and Others