This is a flexible thin film experimental device for R&D that eliminates waste by integrating the necessary minimum modules and controllers into a 19" compact rack with a Plug & Play feel, achieving compact size, space-saving design, simple operation, and high cost performance. It supports magnetron sputtering (up to 3 sources) or resistance heating evaporation (metal sources up to 2, organic materials x4), and can also be equipped with a substrate heating stage, allowing for the production of annealing devices and RF etching. There is also a glove box storage type available (specifications to be discussed). We offer a wide range of optional components that can be flexibly customized. ◉ Φ2 inch magnetron cathode (up to 3 sources) ◉ Resistance heating evaporation source filament, crucible, boat type (up to 4 poles with automatic switching via controller) ◉ Organic evaporation cell: 1cc or 5cc ◉ Glove box compatible (optional, specifications to be discussed) ◉ Other options: simultaneous film deposition, HiPIMS, automatic film deposition controller, custom substrate holders, load lock, substrate rotation/heating/cooling, and many more options available. *Please first contact us with your required specifications, and we will configure the system to meet your needs.

Compact/Space-saving, High-spec 60ℓ volume multi-thin film experimental device that can accommodate various applications by integrating thin film modules such as evaporation, sputtering, EB, and annealing. Compact/Space-saving, High-spec thin film experimental device. Combinations possible from the following evaporation sources: - Resistance heating evaporation source x up to 4 - Organic evaporation source x up to 4 - Electron beam evaporation - 2-inch magnetron sputtering cathode x 4 - Plasma etching: can be installed in either the main chamber or the load lock chamber 【Small Footprint/Space-saving】 - Dual rack type (MiniLab-060): 1200(W) x 590(D)mm 【Excellent Operability/Intuitive Operation Screen】 Windows PC or 7” touch panel. Easy operation regardless of skill level, with maximum safety considerations.

Multi-purpose, high-precision process control [Hot-wall thermal CVD device] ◉ Graphene, carbon nanotubes ◉ ZnO nanowires ◉ Insulating films such as SiO2 Additionally, it can be utilized for a wide range of applications as a hot-wall thermal CVD device.

Low-cost minimum necessary configuration (manual control) tubular furnace, diffusion furnace, and thermal CVD applicable Vertical experimental furnace with manual lift for small substrates from small samples to 3-inch wafers Ideal low-cost vertical furnace for basic experiments in university and corporate research laboratories 【Applications】 ◉ Thermal processing for semiconductors, solar cells, fuel cells, electronic substrates, etc. ◉ Basic experiments: simple thermal processing experiments using vertical tubular furnaces, oxidation diffusion furnaces, LPCVD, etc. 【Main Specifications】 - Maximum furnace temperature: 1200℃, maximum sample temperature: 950℃ - Small sample size: accommodates sizes from a few millimeters to 3-inch wafers - Number of substrates: approximately 1 to 3 sheets - Quartz susceptor with manual lift: includes stop position scale and clamp - Furnace core tube: Φ100 x Φ95 x 470L mm - Lifting: manual rotating handle - Temperature control: PID programmable temperature controller - Thermocouples: 2 pairs of K-type thermocouples x1 (for control, over-temperature), K-type bare wire (for furnace core temperature measurement)

Sputter Cathode and Co-evaporation Source Mixed Thin Film Experimental Device. Metal deposition, organic deposition, and sputter cathode are installed in a compact frame. A resistance heating evaporation source (for metal deposition), an organic evaporation source (for organic materials), and magnetron sputtering (for metals and insulating materials) are installed in the chamber, allowing for various thin film experimental setups within a single chamber. ◉ Three combinations available: 1. Sputter Cathode + Resistance Heating Evaporation Source x2 2. Sputter Cathode + Organic Evaporation Source x2 3. Sputter Cathode + Resistance Heating Source x1 + Organic Evaporation Source x1 (*DC sputtering only) 【Specifications】 ◉ Compatible substrates: up to Φ4 inches ◉ Sputtering: 2" cathode x up to 3 sources ◉ Vacuum deposition: Resistance heating evaporation (up to 2), organic evaporation (up to 4) ◉ 7" touch panel operation with PLC automatic process control ◉ APC automatic pressure control ◉ 1 line of Ar gas (standard) + expandable with N2, O2 ◉ Connects to a Windows PC via USB for recipe creation and storage. Data logging on PC ◉ Various other options available ◉ Easy operation with a 7" touch panel and PLC automatic process control

Vacuum Ultra-High Temperature Cylindrical Heater Unit Maximum Temperature 1800℃ (Graphite, C/C Composite) We will manufacture according to your requested specifications. This is a cylindrical heating unit that can be applied in high vacuum for various purposes. We can custom-make it for heating samples in crucibles within the cylindrical heating range, heating metal, ceramic, and wire-shaped samples, depending on the purpose. ◎ Usable Environment: In vacuum, in inert gas, etc. ◎ Heating Element: Graphite, C/C composite heater, SiC coating, PG coating, tungsten, tantalum, etc. ◎ Manufacturing Range: Heater section (up to approximately Φ150 x 100mm), introduction flange, temperature control unit ◎ Applications: Sample heating in various vacuum device process chambers, discharge plasma generation unit thermal electron gun (Lab6), rapid heating of gas supply system piping (liquid rapid vaporization) We also manufacture custom specifications according to other requests. For details, please contact us.

Two thin-film experimental devices are connected via a load lock mechanism. Different film deposition devices (sputtering - evaporation, etc.) are seamlessly connected through the load lock. With Moorfield's unique load lock system, connections to the left, right, and rear process chambers are also possible (see photo below). 1. MiniLab-E080A (Evaporation Device) - EB Evaporation: 7cc crucible x 6 - Resistance Heating Evaporation x 2 - Organic Evaporation Limit x 2 2. MiniLab-S060A (Sputtering Device) - Φ2" Magnetron Cathode x 4 sources for simultaneous sputtering - Compatible with both DC and RF power supplies 3. Load Lock Chamber - Plasma Etching Stage In the load lock chamber, plasma cleaning of the substrate surface is performed using the "RF/DC substrate bias stage," and the company's unique 'soft etching' technology allows for a <30W low-power, damage-free plasma etching stage. This enables delicate etching processes that are prone to damage, such as 2D (removal of resists like PMMA), graphene delamination, and etching of Teflon substrates. (*This can also be installed in the main chamber stage.)

This is an RF/DC magnetron sputtering device for research and development. Despite its high performance and multifunctionality, it fits into the limited space of a laboratory with its compact size and easy operation via a 7-inch front touch panel. ● Achievable pressure: 5x10^-5 Pa (*fastest 30 minutes up to 1x10^-4 Pa!) ● Film uniformity: ±3% ● Various options: up/down rotation, heater, cathode for magnetic materials, and more ● 3-source cathode + 3 MFC systems, with additional RF/DC power supply, allowing for versatile applications such as multilayer films and simultaneous deposition. - Insulating films - Conductive films - Compounds, etc. 【Main Features】 ◉ Compatible substrates: 2" (up to 3 sources) or 1" (1 source) ◉ 2" cathode x up to 3 sources ◉ Easy operation via touch panel with PLC automatic program control ◉ MFC high-precision APC automatic process pressure control ◉ Up to 3 MFC systems ◉ USB port for Windows PC connection, capable of creating and saving recipes for up to 1000 layers and 50 films. Live data logging on PC. ◉ Vacuum system: TMP + RP (*dry pump option) ◉ Substrate rotation, up/down elevation, heating (Max 500℃) ◉ Quartz crystal film thickness monitor/controller

◉ Maximum operating temperature Max 2000℃ ◉ PLC semi-auto control A higher model of the tabletop Mini-BENCH with semi-auto control Automatically controls each process of "vacuum/purge cycle," "gas replacement," and "venting" Maximum operating temperature 2000℃ Semi-auto control ultra-high temperature experimental furnace (carbon furnace, tungsten metal furnace) Compact and space-saving experimental furnace ◉ Effective heating range (crucible dimensions) - Flat heater heating range: Φ2 inch to Φ6 inch - Cylindrical heater heating range: Φ30 to Φ80 x Depth Max 100(H) mm ◉ Up to 3 MFC systems for automatic flow control (or manual adjustment) ◉ APC automatic pressure control ◉ Ensures safety during operation Monitors abnormal cooling water, chamber temperature, and overpressure. Made of SUS, robust water-cooled chamber can be safely used even during continuous operation at maximum temperature. ◉ Compact and space-saving Width 603 x Depth 603 x Height 1,160 mm (*Installed inside rotary pump housing) Ultra-high temperature heating experiments for small samples in the laboratory, as well as various sample heating experiments for new material research and development, can be easily conducted with simple operations. The main unit is compact yet can be used for research and development in various fields.

High-Temperature Annealing Equipment for Max 2000℃ Φ6 to 8 inch Wafers, Capable of Small-Scale Production with Multi-Atmosphere Wafer Annealing System ◾️ Max 2000℃ ◾️ Effective Heating Range: Φ6 to Φ8 inch single wafer type or batch type (multi-layer 5 wafer cassette) ◾️ Heater Control: 1 zone or 2 zones (cascade control) ◾️ Heater Material: ・C/C Composite: Φ6 to Φ8 inch ・PG Coating High Purity Graphite: Φ6 to Φ8 inch ◾️ Operating Atmosphere: ・Vacuum (1x10-2Pa), Inert Gas (Ar, N2) ◾️ PLC Semi-Automatic Operation ・Automatic sequence control for vacuum/purge cycle and venting ・Full automatic operation (optional) ・Touch panel operation allows centralized management without dispersed control. ◾️ Process Pressure Control ・APC Control (MFC flow or automatic opening adjustment valve PID loop control) ・Maximum 3 systems of MFC flow automatic control or manual adjustment with flow meter/needle valve ◾️ PLOT screen graph display, CSV data output