Max 1000℃, MFC up to 3 systems, APC pressure control, compatible with substrates from 4" to a maximum of 6", high vacuum annealing device (<5 × 10-7 mbar) [ANNEAL] is a research and development annealing device capable of high-temperature heat treatment of substrates such as wafers in a stable process atmosphere. It allows high-temperature processing up to 1000℃ using a heating stage installed in a high vacuum water-cooled SUS chamber. A heat shield is installed inside the chamber to ensure safety through interlock. The mass flow controller can be expanded to a maximum of 3 systems, enabling firing operations at precisely adjusted process gas pressures (APC automatic process control system option). Additionally, there are many options available, including a front view port, dry scroll pump, special substrate holder, and additional thermocouples. The heating stage inside the chamber has three variations depending on the process gas atmosphere and treatment temperature: - Halogen lamp heater: Max 500℃ - C/C composite heater: Max 1000℃ (in vacuum, inert gas only) - SiC coating heater: Max 1000℃ (vacuum, inert gas, O2)

ThermoCera Japan has updated the latest catalog for substrate heating heaters, ideal for thin film experiments such as CVD and PVD, with ultra-high temperature substrate heating heaters ranging from 1 inch to 4 inches. ◉ Maximum operating temperature: 850°C (SH-IN), 1100°C (SH-BN) We also accommodate requests for customized products such as substrate holders, vertical lift mechanisms, substrate rotation mechanisms, and RF bias. Additionally, we offer 19-inch rack-mounted heater controllers in addition to traditional stationary models.

We have released dedicated remote management software "IntelliLink" for the nanoPVD-S10A magnetron sputtering system, the nanoPVD-T15A metal/organic film deposition system, and the nanoPVD-ST15A composite thin film experimental system. In addition to the control software "IntelliDep," which allows centralized management of equipment operation and film formation control via the included 7" touch panel, the new optional IntelliLink enables remote management from a Windows PC. With IntelliLink, almost all operations, except for the main controls of the equipment (vacuum pumping, vent operation, interlock monitoring), can be performed from the PC. (1) System live monitoring (equipment operation status monitor) - Chamber pressure, MFC flow rate settings - Film thickness display, settings, calibration - Stage rotation, heating, shutter opening and closing operations (2) Error analysis (3) Recipe creation, saving, uploading (4) Data logging, CSV format output → Data sharing with other devices ◉ Connect to the equipment's rear Ethernet port using the included USB cable.

Multi-purpose, high-precision process control [Hot-wall thermal CVD device] ◉ Graphene, carbon nanotubes ◉ ZnO nanowires ◉ Insulating films such as SiO2 Additionally, it can be utilized for a wide range of applications as a hot-wall thermal CVD device.

Low-cost minimum necessary configuration (manual control) tubular furnace, diffusion furnace, and thermal CVD applicable Vertical experimental furnace with manual lift for small substrates from small samples to 3-inch wafers Ideal low-cost vertical furnace for basic experiments in university and corporate research laboratories 【Applications】 ◉ Thermal processing for semiconductors, solar cells, fuel cells, electronic substrates, etc. ◉ Basic experiments: simple thermal processing experiments using vertical tubular furnaces, oxidation diffusion furnaces, LPCVD, etc. 【Main Specifications】 - Maximum furnace temperature: 1200℃, maximum sample temperature: 950℃ - Small sample size: accommodates sizes from a few millimeters to 3-inch wafers - Number of substrates: approximately 1 to 3 sheets - Quartz susceptor with manual lift: includes stop position scale and clamp - Furnace core tube: Φ100 x Φ95 x 470L mm - Lifting: manual rotating handle - Temperature control: PID programmable temperature controller - Thermocouples: 2 pairs of K-type thermocouples x1 (for control, over-temperature), K-type bare wire (for furnace core temperature measurement)

Sputter Cathode and Co-evaporation Source Mixed Thin Film Experimental Device. Metal deposition, organic deposition, and sputter cathode are installed in a compact frame. A resistance heating evaporation source (for metal deposition), an organic evaporation source (for organic materials), and magnetron sputtering (for metals and insulating materials) are installed in the chamber, allowing for various thin film experimental setups within a single chamber. ◉ Three combinations available: 1. Sputter Cathode + Resistance Heating Evaporation Source x2 2. Sputter Cathode + Organic Evaporation Source x2 3. Sputter Cathode + Resistance Heating Source x1 + Organic Evaporation Source x1 (*DC sputtering only) 【Specifications】 ◉ Compatible substrates: up to Φ4 inches ◉ Sputtering: 2" cathode x up to 3 sources ◉ Vacuum deposition: Resistance heating evaporation (up to 2), organic evaporation (up to 4) ◉ 7" touch panel operation with PLC automatic process control ◉ APC automatic pressure control ◉ 1 line of Ar gas (standard) + expandable with N2, O2 ◉ Connects to a Windows PC via USB for recipe creation and storage. Data logging on PC ◉ Various other options available ◉ Easy operation with a 7" touch panel and PLC automatic process control

Vacuum Ultra-High Temperature Cylindrical Heater Unit Maximum Temperature 1800℃ (Graphite, C/C Composite) We will manufacture according to your requested specifications. This is a cylindrical heating unit that can be applied in high vacuum for various purposes. We can custom-make it for heating samples in crucibles within the cylindrical heating range, heating metal, ceramic, and wire-shaped samples, depending on the purpose. ◎ Usable Environment: In vacuum, in inert gas, etc. ◎ Heating Element: Graphite, C/C composite heater, SiC coating, PG coating, tungsten, tantalum, etc. ◎ Manufacturing Range: Heater section (up to approximately Φ150 x 100mm), introduction flange, temperature control unit ◎ Applications: Sample heating in various vacuum device process chambers, discharge plasma generation unit thermal electron gun (Lab6), rapid heating of gas supply system piping (liquid rapid vaporization) We also manufacture custom specifications according to other requests. For details, please contact us.

This is an RF/DC magnetron sputtering device for research and development. Despite its high performance and multifunctionality, it fits into the limited space of a laboratory with its compact size and easy operation via a 7-inch front touch panel. ● Achievable pressure: 5x10^-5 Pa (*fastest 30 minutes up to 1x10^-4 Pa!) ● Film uniformity: ±3% ● Various options: up/down rotation, heater, cathode for magnetic materials, and more ● 3-source cathode + 3 MFC systems, with additional RF/DC power supply, allowing for versatile applications such as multilayer films and simultaneous deposition. - Insulating films - Conductive films - Compounds, etc. 【Main Features】 ◉ Compatible substrates: 2" (up to 3 sources) or 1" (1 source) ◉ 2" cathode x up to 3 sources ◉ Easy operation via touch panel with PLC automatic program control ◉ MFC high-precision APC automatic process pressure control ◉ Up to 3 MFC systems ◉ USB port for Windows PC connection, capable of creating and saving recipes for up to 1000 layers and 50 films. Live data logging on PC. ◉ Vacuum system: TMP + RP (*dry pump option) ◉ Substrate rotation, up/down elevation, heating (Max 500℃) ◉ Quartz crystal film thickness monitor/controller

◉ Maximum operating temperature Max 2000℃ ◉ PLC semi-auto control A higher model of the tabletop Mini-BENCH with semi-auto control Automatically controls each process of "vacuum/purge cycle," "gas replacement," and "venting" Maximum operating temperature 2000℃ Semi-auto control ultra-high temperature experimental furnace (carbon furnace, tungsten metal furnace) Compact and space-saving experimental furnace ◉ Effective heating range (crucible dimensions) - Flat heater heating range: Φ2 inch to Φ6 inch - Cylindrical heater heating range: Φ30 to Φ80 x Depth Max 100(H) mm ◉ Up to 3 MFC systems for automatic flow control (or manual adjustment) ◉ APC automatic pressure control ◉ Ensures safety during operation Monitors abnormal cooling water, chamber temperature, and overpressure. Made of SUS, robust water-cooled chamber can be safely used even during continuous operation at maximum temperature. ◉ Compact and space-saving Width 603 x Depth 603 x Height 1,160 mm (*Installed inside rotary pump housing) Ultra-high temperature heating experiments for small samples in the laboratory, as well as various sample heating experiments for new material research and development, can be easily conducted with simple operations. The main unit is compact yet can be used for research and development in various fields.

High-Temperature Annealing Equipment for Max 2000℃ Φ6 to 8 inch Wafers, Capable of Small-Scale Production with Multi-Atmosphere Wafer Annealing System ◾️ Max 2000℃ ◾️ Effective Heating Range: Φ6 to Φ8 inch single wafer type or batch type (multi-layer 5 wafer cassette) ◾️ Heater Control: 1 zone or 2 zones (cascade control) ◾️ Heater Material: ・C/C Composite: Φ6 to Φ8 inch ・PG Coating High Purity Graphite: Φ6 to Φ8 inch ◾️ Operating Atmosphere: ・Vacuum (1x10-2Pa), Inert Gas (Ar, N2) ◾️ PLC Semi-Automatic Operation ・Automatic sequence control for vacuum/purge cycle and venting ・Full automatic operation (optional) ・Touch panel operation allows centralized management without dispersed control. ◾️ Process Pressure Control ・APC Control (MFC flow or automatic opening adjustment valve PID loop control) ・Maximum 3 systems of MFC flow automatic control or manual adjustment with flow meter/needle valve ◾️ PLOT screen graph display, CSV data output