High-Temperature Annealing Equipment for Max 2000℃ Φ6 to 8 inch Wafers, Capable of Small-Scale Production with Multi-Atmosphere Wafer Annealing System ◾️ Max 2000℃ ◾️ Effective Heating Range: Φ6 to Φ8 inch single wafer type or batch type (multi-layer 5 wafer cassette) ◾️ Heater Control: 1 zone or 2 zones (cascade control) ◾️ Heater Material: ・C/C Composite: Φ6 to Φ8 inch ・PG Coating High Purity Graphite: Φ6 to Φ8 inch ◾️ Operating Atmosphere: ・Vacuum (1x10-2Pa), Inert Gas (Ar, N2) ◾️ PLC Semi-Automatic Operation ・Automatic sequence control for vacuum/purge cycle and venting ・Full automatic operation (optional) ・Touch panel operation allows centralized management without dispersed control. ◾️ Process Pressure Control ・APC Control (MFC flow or automatic opening adjustment valve PID loop control) ・Maximum 3 systems of MFC flow automatic control or manual adjustment with flow meter/needle valve ◾️ PLOT screen graph display, CSV data output

Tabletop Small-Size Experimental Furnace - Space-Saving, Maximum Operating Temperature 2000℃ ◆ Equipment Configuration ◆ We will propose the desired configuration according to your budget and purpose. (A) Minimum Configuration: Chamber + Temperature Control Unit (B) Above Minimum Configuration (A) + Vacuum Exhaust System (Pump, Gauge, Valve, Vacuum Piping) ◉ Cylindrical Heater: For sintering samples in crucibles (for solid, powder, granule, and pellet-shaped samples) ◉ Flat Heater: For sintering Φ1" to Φ6" wafers and small chip samples ◆ Basic Specifications ◆ - Heater: C/C Composite (Carbon Furnace), Tungsten (Metal Furnace) - Insulation Material: Graphite Felt, Tungsten/Molybdenum - Temperature Control: Programmable Temperature Controller, C Thermocouple - Achievable Vacuum Level: 1x10-2 Pascal (*for an empty furnace) - Power Supply Specifications: AC200V 50/60HZ Three-Phase 6KVA - Cooling Water: 3L/min, 0.4Mpa 25-30℃ ◆ Control Box Specifications ◆ - Programmable Temperature Controller - DC Power Supply Unit or External Transformer Box - Current and Voltage Meters - Heater Circuit Trip Switch - Main Power Switch ◆ Options ◆ - Vacuum Exhaust System - Custom Crucibles and Others

◉ Maximum operating temperature Max 2000℃ ◉ PLC semi-automatic control A higher model of the tabletop Mini-BENCH with semi-automatic control Automatically controls each process of "vacuum/purge cycle," "gas replacement," and "venting" Maximum operating temperature 2000℃ Semi-automatic control ultra-high temperature experimental furnace (carbon furnace, tungsten metal furnace) Compact and space-saving experimental furnace ◉ Effective heating range (crucible dimensions) - Planar heater heating range: Φ2 inch to Φ6 inch - Cylindrical heater heating range: Φ30 to Φ80 x Depth Max 100(H) mm ◉ Up to 3 MFC systems for automatic flow control (or manual adjustment) ◉ APC automatic pressure control ◉ Ensures safety during operation Monitors abnormal cooling water, chamber temperature, and overpressure. Made of SUS, the robust water-cooled chamber can be safely used even during continuous operation at maximum temperature. ◉ Compact and space-saving Width 603 x Depth 603 x Height 1,160 mm (*Installed inside rotary pump housing) Various sample heating experiments, such as ultra-high temperature heating of small samples and new material research and development, can be easily performed with simple operations. The main unit is compact yet can be used for research and development in various fields.

Tabletop Small-Size Experimental Furnace - Space-Saving, Maximum Operating Temperature 2000℃ ◆ Equipment Configuration ◆ We will propose the desired configuration according to your budget and purpose. (A) Minimum Configuration: Chamber + Temperature Control Unit (B) Above Minimum Configuration (A) + Vacuum Exhaust System (Pump, Gauge, Valve, Vacuum Piping) ◉ Cylindrical Heater: For sample sintering inside the crucible (for solid, powder, granular, and pellet-shaped samples) ◉ Flat Heater: For sintering Φ1" to Φ6" wafers and small chip samples ◆ Basic Specifications ◆ - Heater: C/C Composite (Carbon Furnace), Tungsten (Metal Furnace) - Insulation Material: Graphite Felt, Tungsten/Molybdenum - Temperature Control: Programmable Temperature Controller, C Thermocouple - Achievable Vacuum Level: 1x10-2 Pascal (*for empty furnace) - Power Supply Specifications: AC200V 50/60HZ Three-Phase 6KVA - Cooling Water: 3L/min, 0.4Mpa 25-30℃ ◆ Control Box Specifications ◆ - Programmable Temperature Controller - DC Power Supply Unit or External Transformer Box - Current and Voltage Meters - Heater Circuit Trip Switch - Main Power Switch ◆ Options ◆ - Vacuum Exhaust System - Custom Crucibles and Others

Max 2000℃ Φ6〜8 inch wafer dedicated high-temperature annealing device, capable of small-scale production multi-atmosphere wafer annealing device. ◾️ Max 2000℃ ◾️ Effective heating range: Φ6〜Φ8 inch single wafer type or batch type (multi-stage 5 wafer cassette) ◾️ Heater control: 1 zone or 2 zones (cascade control) ◾️ Heater materials: ・C/C composite: Φ6〜Φ8 inch ・PG coating high-purity graphite: Φ6〜Φ8 inch ◾️ Operating atmosphere: ・Vacuum (1x10-2Pa), inert gas (Ar, N2) ◾️ PLC semi-automatic operation ・Automatic sequence control for vacuum/purge cycle and venting ・Fully automatic operation (optional) ・Touch panel operation, allowing centralized management without dispersed operations. ◾️ Process pressure control ・APC control (MFC flow or automatic opening adjustment valve PID loop control) ・Maximum 3 systems of MFC flow automatic control, or manual adjustment of float meter/needle valve ◾️ PLOT screen graph display, CSV data output

◉ Maximum operating temperature Max 2000℃ ◉ PLC semi-auto control A higher model of the tabletop Mini-BENCH with semi-auto control Automatically controls each process of "vacuum/purge cycle," "gas replacement," and "venting" Maximum operating temperature 2000℃ Semi-auto control ultra-high temperature experimental furnace (carbon furnace, tungsten metal furnace) Compact and space-saving experimental furnace ◉ Effective heating range (crucible dimensions) - Flat heater heating range: Φ2 inch to Φ6 inch - Cylindrical heater heating range: Φ30 to Φ80 x Depth Max 100(H) mm ◉ Up to 3 MFC systems for automatic flow control (or manual adjustment) ◉ APC automatic pressure control ◉ Ensures safety during operation Monitors abnormal cooling water, chamber temperature, and overpressure. Made of SUS, robust water-cooled chamber can be safely used even during continuous operation at maximum temperature. ◉ Compact and space-saving Width 603 x Depth 603 x Height 1,160 mm (*Installed inside rotary pump housing) Ultra-high temperature heating experiments for small samples in the laboratory, as well as various sample heating experiments for new material research and development, can be easily conducted with simple operations. The main unit is compact yet can be used for research and development in various fields.

The MiniLab thin film experimental device allows for the construction of a compact, semi-customized system that eliminates waste by incorporating the optimal components and control modules according to the required film formation methods and materials from a wide range of options. By equipping a modular control unit with a Plug & Play feel, the application range expands, enabling various thin film process experiments. 【MiniLab Thin Film Experimental Device Configuration Modules】 ◎ Manufacturing Range Resistance heating deposition (TE), organic deposition (LTE), electron beam deposition (EB), sputtering (SP), CVD, dry etching 【Small Footprint & Space Saving】 - Single rack type (026): 590(W) x 590(D)mm - Dual rack type (060): 1200(W) x 590(D)mm - Triple rack type (125): 1770(W) x 755(D)mm 【Excellent Operability & Intuitive Operation Screen】 Windows PC or 7” touch panel. Easy operation that does not require advanced skills, with maximum consideration for safety. All operations except for internal component adjustments and material exchanges in the chamber are performed via the PC/HMI screen.

We have completely renewed the catalog for the MiniLab series thin film experimental equipment. 【Features of the MiniLab Series】 ◉ Supports sputtering, evaporation (resistive heating, organic, EB), annealing, plasma etching, etc. ◉ Modular design allows for flexible combinations of components (source hybrid types and multi-chamber configurations are possible) ◉ Compact, space-saving design (width 1,200 x depth 560 mm) ◉ Excellent operability: intuitive interface allows for centralized management of all operations via a touch panel without dispersion. We are confident that this will be of great assistance in research and development settings. Please consider it.

Max 1000℃, MFC up to 3 systems, APC pressure control, compatible with substrates from 4" to a maximum of 6", high vacuum annealing device (<5 × 10-7 mbar) [ANNEAL] is a research and development annealing device capable of high-temperature heat treatment of substrates such as wafers in a stable process atmosphere. It allows high-temperature processing up to 1000℃ using a heating stage installed in a high vacuum water-cooled SUS chamber. A heat shield is installed inside the chamber to ensure safety through interlock. The mass flow controller can be expanded to a maximum of 3 systems, enabling firing operations with precisely adjusted process gas pressure (APC automatic process control system option). Additionally, there are many options available, including a front view port, dry scroll pump, special substrate holder, and additional thermocouples. The heating stage inside the chamber has three variations depending on the process gas atmosphere and treatment temperature: - Halogen lamp heater: Max 500℃ - C/C composite heater: Max 1000℃ (in vacuum, inert gas only) - SiC coating heater: Max 1000℃ (vacuum, inert gas, O2)

High-efficiency magnetron sputtering cathode compatible with RF, DC, and pulse DC, capable of depositing metals and insulators without impurities. It also excels in maintainability. 【Features】 - High vacuum compatible - Available in sizes Φ2 inch, Φ3 inch, Φ4 inch - Adopts a clamp ring type, eliminating the need for bonding - Excellent maintainability, allowing for easy target replacement - Rich options including shutters, chimney ports, gas injection, high-strength magnets for magnetic materials, etc. - Compatible with various flange sizes 【Main Specifications】 ■ Compatible with RF, DC, and pulse DC ■ Target thickness: 1/16" to 1/4" ■ N-type coaxial connector ■ Water-cooled: 4ℓ/min, 0.35Mpa Φ6mm tube connection ■ Case material: SUS304 ■ Target clamp material: Al or SUS304 ■ Bellows (*Flexi-head type) material: SUS316 ■ Insulating material: PEEK/PTFE ■ Sealing material: Viton ■ High-strength magnet pack: NiFe

ThermoCera Japan has updated the latest catalog for substrate heating heaters, ideal for thin film experiments such as CVD and PVD, with ultra-high temperature substrate heating heaters ranging from 1 inch to 4 inches. ◉ Maximum operating temperature: 850°C (SH-IN), 1100°C (SH-BN) We also accommodate requests for customized products such as substrate holders, vertical lift mechanisms, substrate rotation mechanisms, and RF bias. Additionally, we offer 19-inch rack-mounted heater controllers in addition to traditional stationary models.

It can be applied to various vacuum thin film experiments such as PVD (sputtering, evaporation, EB, etc.), CVD, high-temperature vacuum annealing, and high-temperature sample analysis substrate stages. We offer custom-made solutions to meet various specifications. 【Features】 ● Semi-custom product. Designed and manufactured according to your requests. ● Easy replacement of the auxiliary heater wire. ● Easy installation and maintenance (M6 stud bolts, supports). ● Compatible with RF/DC bias and substrate rotation. 【Standard Accessories】 ● Thermocouple: wire type with alumina insulating sleeve. ● Mounting stud bolts. 【Options】 ● RF (150W)/DC (1KW) bias application. ● Non-standard heater wires (Nb, Mo, Pt/Re, WRe, etc.). ● Substrate holding clips. ● Mounting brackets. ● Substrate holders. ● Tapped holes for holder installation. ● Change of top plate material (PBN, quartz, carbon, Inconel, etc.). ● Additional thermocouples for overheating. ● Base flange and vacuum feedthrough.

Compact and space-saving! Ideal for organic thin film development, allowing seamless execution of all processes such as deposition, sputtering, and annealing within a glove box. In the development processes of organic EL, organic thin film solar cells, and graphene/2D materials (such as transition metal dichalcogenides and other two-dimensional layered inorganic nanomaterials), it is necessary to handle samples in an inert gas atmosphere isolated from oxygen and moisture. By housing a PCD/CVD chamber within the glove box, we achieve a "oxygen and moisture-free" experimental environment for organic film applications in a compact and space-saving setup. 【Features】 ◉ A series of processes such as PVD film deposition, spin coating, and hot plate baking can be performed seamlessly within the glove box without exposure to the outside air. ◉ Space-saving: The chamber does not protrude from the back, so it does not take up space. 【MiniLab Models】 ◉ MiniLab-026 (26ℓ volume): Metal/insulator/organic material deposition, sputtering, RF/DC etching, annealing ◉ MiniLab-090 (90ℓ volume): Metal/insulator/organic material deposition, sputtering, RF/DC etching, annealing

Plasma CVD equipment compatible with wafer sizes Φ3 inch and Φ4 inch. Rapid synthesis of clean, high-quality graphene while suppressing impurities. Usable with both thermal CVD and low to high temperature plasma CVD methods. The configuration can be customized according to requirements, including mass flow gas supply systems and substrate heating heaters. 【Example of equipment configuration】 - Substrate: Cu, Ni, etc. (film, foil) - Raw materials: CH4, C2H4, solids (PMMA), etc. - Process gases: H2, Ar, N2, etc. - Substrate size: Φ4 inch - 150W, 13.56MHz RF power supply - Substrate heating from 500℃ to Max 1100℃ - High precision process gas pressure APC control - Mass flow controller with a maximum of 4 channels

Max 1000℃, MFC up to 3 systems, APC pressure control, compatible with substrates from 4" to a maximum of 6", high vacuum annealing device (<5 × 10-7 mbar) [ANNEAL] is a research and development annealing device capable of high-temperature heat treatment of substrates such as wafers in a stable process atmosphere. It allows high-temperature processing up to 1000℃ using a heating stage installed in a high vacuum water-cooled SUS chamber. A heat shield is installed inside the chamber to ensure safety through interlock. The mass flow controller can be expanded to a maximum of 3 systems, enabling firing operations at precisely adjusted process gas pressures (APC automatic process control system option). Additionally, there are many options available, including a front view port, dry scroll pump, special substrate holder, and additional thermocouples. The heating stage inside the chamber has three variations depending on the process gas atmosphere and treatment temperature: - Halogen lamp heater: Max 500℃ - C/C composite heater: Max 1000℃ (in vacuum, inert gas only) - SiC coating heater: Max 1000℃ (vacuum, inert gas, O2)

High-temperature substrate heating mechanism for vacuum thin film processes, used for the development of semiconductors, electronic devices, etc. It can be utilized for various film deposition experiments on silicon substrates, sapphire substrates, compound substrates, and others. Selection of elements and materials according to ultra-high temperature substrate heating conditions (Max 1800°C) for vacuum equipment such as CVD and sputtering is possible. ◉ Compatible with ultra-high vacuum, inert gas, O2, and various process gas atmospheres. ◉ Substrate up/down/rotation mechanism and RF/DC bias application possible. ◉ Selection of elements according to the atmosphere: NiCr, Inconel, Tungsten, Graphite, CC composite, Graphite (SiC coating, PBN coating) CC composite (PG coating) ◉ Various vacuum flange connections: ICF, VF ◉ Thermocouple included ◉ Other options: Motor controller, temperature control unit, transbox.

High-efficiency magnetron sputtering cathode compatible with RF, DC, and pulse DC, capable of depositing metals, insulators, and other materials without impurities. It also excels in maintainability. 【Features】 - Compatible with high vacuum - Available in sizes Φ2 inch, Φ3 inch, Φ4 inch - Adopts a clamp ring type, eliminating the need for bonding - Excellent maintainability, allowing for easy target replacement - A wide range of options including shutters, chimney ports, gas injection, and high-strength magnets for magnetic materials - Compatible with various flange sizes 【Main Specifications】 ■ Compatible with RF, DC, and pulse DC ■ Target thickness: 1/16" to 1/4" ■ N-type coaxial connector ■ Water-cooled: 4ℓ/min, 0.35Mpa Φ6mm tube connection ■ Case material: SUS304 ■ Target clamp material: Al or SUS304 ■ Bellows (*Flexi-head type) material: SUS316 ■ Insulating material: PEEK/PTFE ■ Sealing material: Viton ■ High-strength magnet pack: NiFe

The HTE heater is a high-temperature heating heater for vacuum devices with a maximum operating temperature of 1500°C. It can evaporate materials with high evaporation temperatures, making it suitable for a wide range of applications as a vacuum high-temperature heater and deposition cell, from low-temperature organic deposition (up to 800°C) cells to high-temperature resistance heating deposition (up to 1500°C) MBE cells. Shutter actuators and water-cooled jackets are also available. The high-temperature heater specification above 800°C is designed with internal shielding, considering insulation and thermal shielding. 【Main Specifications】 ■ Maximum control temperature: 800°C or 1500°C ■ Operating environment: In vacuum or inert gas (*O2 up to 800°C) ■ Heater: Tungsten filament ■ Crucible volume: 1cc (maximum filling amount 1.5cc) ■ Crucible material: Alumina ■ Case material: SUS304 or Molybdenum ■ Thermocouple: K or C 【Options】 ⚫ Crucible material: PBN, Graphite, Quartz ⚫ Heater: NiCr wire, Kanthal wire (*for O2) ⚫ Crucible volume: 10cc (maximum filling amount 15cc) ⚫ Shutter: Pneumatic or motor-driven ⚫ Water-cooled jacket ⚫ Controller (for heater and shutter control)

Vacuum Ultra-High-Temperature Cylindrical Heater Unit Maximum Temperature 1800℃ (Graphite, C/C Composite) We will manufacture according to your requested specifications. This is a cylindrical heating unit that can be applied in high vacuum for various purposes. Within the cylindrical heating range, we can custom-make for purposes such as heating crucibles containing samples, heating metal, ceramic, and wire-shaped samples, etc. ◎ Usable Environment: In vacuum, in inert gas, etc. ◎ Heating Element: Graphite, C/C composite heater, SiC coating, PG coating, tungsten, tantalum, etc. ◎ Manufacturing Range: Heater section (up to approximately Φ150 x 100mm), introduction flange, temperature control unit ◎ Applications: Sample heating in various vacuum device process chambers, discharge plasma generation unit thermal electron gun (Lab6), rapid heating of gas supply system piping (liquid rapid vaporization) We also offer custom specifications according to other requests. For details, please contact us.

Compact measurement, robust body, high accuracy ±1%, 240msec fast response. It can be applied for industrial machine control, temperature monitoring in production sites, and various other purposes. 【Features】 ◎ Integrated amplifier and sensor ◎ 4-20mA output (standard), 0-50mV, thermocouple K, J, T output (optional) ◎ Accuracy: ±1% or ±1℃ (whichever is larger) ◎ Repeatability: ±0.5% or ±0.5℃ (whichever is larger) ◎ Response speed: 240msec ◎ Protection rating: IP65 【Other Specifications】 ◉ Field of view: 2:1 or 15:1 ◉ Temperature range: ・LT (-20℃ to 100℃) ・MT (0 to 250℃) ・HT (0 to 500℃) ◉ Measurement wavelength range: 8 to 14μm ◉ Emissivity: 0.95 (fixed) ◉ Power supply: 24VDC ◉ Body dimensions: Φ18mm (diameter) x 103mm (length) ◉ Weight: approximately 95g ◉ Cable 1m (standard included): maximum extension 3m (optional)

【Overview】 Connect to a Windows PC using the standard accessory "CalexConfig" and the included USB cable (1.8m), allowing you to set measurement parameters for the sensor, analyze measurement results, and output them in CSV format. 1) 4-20mA output 2) USB output (operates on USB bus power) 3) Simultaneous use of 4-20mA/USB output These three methods of use are possible. 【Features】 ◎ Simultaneous use of USB data logging and 4-20mA analog output ◎ Excellent basic performance: accuracy ±1%, reproducibility ±0.5%, 200msec fast response ◉ PUA2: Covers short wavelengths from 2.0 to 2.4μm, capable of measuring metal surfaces ◉ PUA5: Optimal for measuring glass surfaces, wavelength 5μm ◉ PUA8: General-purpose, suitable for a wide range of applications, wavelength 8-14μm 【Other Specifications】 ◉ Field of view: 15:1, 25:1, 30:1, or 75:1 ◉ Emissivity setting range: 0.1 to 1.0 ◉ Power supply: 24VDC ◉ Body dimensions: Φ27.6mm (diameter) x 61mm (length) ◉ Weight: approximately 155g ◉ Analog signal cable 1m (standard included, extendable up to 30m) *USB cable 1.8m (USB cable cannot be extended)

ExTemp is an intrinsically safe explosion-proof radiation temperature sensor that can be used in hazardous material handling equipment and factories such as petrochemical plants, pharmaceutical factories, and chemical plants. (TIIS Type Certification Number: 21097) TIIS (Technical Institution of Industrial Safety) certified for use in hazardous locations (Zone 0, 1, & 2) ● Usable in hazardous locations Zone 0, 1, and 2 (special hazardous locations, Class 1 hazardous locations, and Class 2 hazardous locations) ● Measurement temperature range: -20℃ to +1000℃ ● Maximum and minimum adjustable span: Max 1000℃, Min 100℃ (configurable within the -20 to 1000℃ range) ● 2-wire, 4-20mA output ● Includes intrinsically safe explosion-proof isolation barrier ● Comes with USB-connected configuration setter "LCT Setter": Allows scaling, span adjustment, emissivity settings, etc., using dedicated software on a Windows PC ● Options: Mounting brackets, air purge kit, extension cables (10m, 25m) ● Designed for harsh environments, featuring a 316 stainless steel housing ● Protection rating IP65

**Overview** Connect to a Windows PC using the standard accessory "CalexConfig" and a USB cable (1.8m included) to set measurement parameters for the sensor, analyze measurement results, and output them in CSV format. 1) 4-20mA output 2) USB output (operates on USB bus power) 3) Simultaneous use of 4-20mA/USB output These three methods of use are possible. **Features** ◎ Simultaneous use of USB data logging and 4-20mA analog output ◎ Excellent basic performance: accuracy ±1%, reproducibility ±0.5%, 200msec fast response ◉ PUA2: Covers short wavelengths from 2.0 to 2.4μm, capable of measuring metal surfaces ◉ PUA5: Optimal for measuring glass surfaces, wavelength 5μm ◉ PUA8: General-purpose, suitable for a wide range of applications, wavelength 8-14μm **Other Specifications** ◉ Field of view: 15:1, 25:1, 30:1, or 75:1 ◉ Emissivity setting range: 0.1 to 1.0 ◉ Power supply: 24VDC ◉ Body dimensions: Φ27.6mm (diameter) x 61mm (length) ◉ Weight: approximately 155g ◉ Analog signal cable 1m (standard included, extendable up to 30m) *USB cable 1.8m (USB cable cannot be extended)

USB-connected compact infrared temperature sensor, no power supply needed, powered via USB bus from PC, parameter settings and data management with included dedicated software. 【Overview】 Simply install the standard included "CalexConfig" and connect to a Windows PC using a USB cable. You can easily set measurement parameters, conduct measurements, and analyze results with CSV output on your PC in a plug-and-play manner. 【Features】 ◎ USB data logging ◎ Excellent basic performance: accuracy ±1%, reproducibility ±0.5%, 240 msec fast response ◎ Covers measurement wavelength range of 8 to 14 μm ◎ Compact size Φ18mm x 45mm 【Other Specifications】 ◉ Field of view: ・PMU21: 2:1 ・PMU201: 20:1 ◉ Temperature range: -20℃ to 1000℃ ◉ Measurement wavelength range: 8-14 μm ◉ Emissivity: 0.2 to 1.0 ◉ Power supply: not required ◉ Body dimensions: Φ18mm (diameter) x 45mm (length) ◉ Weight: approximately 85g ◉ USB cable length: 1.5m

Temperature range, emissivity, alarm, and other parameters can be set using a smartphone or tablet without the need for a display instrument or power supply for the instrument. ● Settings can be made using a smartphone or tablet. ● A dedicated app can be downloaded for free from Google Play (Android 4.1 to 5.1). ● Using Android's NFC communication, simply touch the sensor part to read and write data. ● Ultra-compact sensor (Φ31mm x t29mm) allows temperature measurement in tight spaces. ● Fast response time of 125 msec, high accuracy of ±1.5%. ● Voltage output (0-5V or 0-10V), or K thermocouple output. 【Other Specifications】 ◉ Field of view: 15:1 ◉ Temperature range: 0℃ to 1000℃ ◉ Measurement wavelength range: 8 to 14μm ◉ Emissivity: 0.2 to 1.0 ◉ Power supply: 24VDC (minimum 6V/10V to maximum 28VDC) ◉ Cable: 1m included (extension up to 30m possible) 【Options】 ◉ Body mounting bracket ◉ Extension cable ◉ Air purge kit

High-performance touch panel converter for easy setup, data logging, and data storage on microSD card. The PM2.2 model can also measure glossy metal surfaces. 【Overview】 With a highly visible high-brightness touch panel display, parameters such as temperature range, emissivity, and sampling rate can be intuitively operated and set. Long-term data storage and management are possible with a microSD card. (*An option for a converter without a display is also available.) The compact sensor head, measuring φ18mm x 45mm, allows for temperature measurement in tight spaces. It employs sensors and cables with excellent noise resistance, making it suitable for integration into moving equipment such as robotic arms. The PM2.2 model uses a short wavelength of 2.2um, supporting high temperatures (Max 2000℃) and measurements of glossy metal material surfaces. 【Features】 ◎ Wide range: -20 to 1000℃ (PM), 100 to 2000℃ (PM2.2) ◎ Excellent basic performance: Accuracy ±1%, reproducibility ±0.5%, 240msec fast response ◎ Measurement wavelength range: 8 to 14μm (PM), 2.0 to 2.2μm (PM2.2) ◎ Compact Φ18mm x 45mm

Endless possibility_thermal engineering There is an endless demand for "heat," which is indispensable in any era, and we aim to contribute, even in a small way, to the research and development needs. We would like to introduce the latest thermal engineering and temperature measurement technologies. Our company sells temperature measurement devices such as radiation temperature sensors, as well as heaters and experimental furnaces that support the semiconductor and electronic device development sector. - Ultra-high temperature substrate heating heaters for CVD and PVD vacuum thin film experiments - Ultra-high temperature small experimental furnaces - Thin film experimental devices for research and development - Compact series thin film experimental devices - Infrared radiation temperature sensors - Various vacuum components

This is an RF/DC magnetron sputtering device for research and development. Despite its high performance and multifunctionality, it fits into the limited space of a laboratory with its compact size and easy operation via a 7-inch front touch panel. ● Achievable pressure: 5x10^-5 Pa (*fastest 30 minutes up to 1x10^-4 Pa!) ● Film uniformity: ±3% ● Various options: up/down rotation, heater, cathode for magnetic materials, and more ● 3-source cathode + 3 MFC systems, with additional RF/DC power supply, allowing for versatile applications such as multilayer films and simultaneous deposition. - Insulating films - Conductive films - Compounds, etc. 【Main Features】 ◉ Compatible substrates: 2" (up to 3 sources) or 1" (1 source) ◉ 2" cathode x up to 3 sources ◉ Easy operation via touch panel with PLC automatic program control ◉ MFC high-precision APC automatic process pressure control ◉ Up to 3 MFC systems ◉ USB port for Windows PC connection, capable of creating and saving recipes for up to 1000 layers and 50 films. Live data logging on PC. ◉ Vacuum system: TMP + RP (*dry pump option) ◉ Substrate rotation, up/down elevation, heating (Max 500℃) ◉ Quartz crystal film thickness monitor/controller

We have released dedicated remote management software "IntelliLink" for the nanoPVD-S10A magnetron sputtering system, the nanoPVD-T15A metal/organic film deposition system, and the nanoPVD-ST15A composite thin film experimental system. In addition to the control software "IntelliDep," which allows centralized management of equipment operation and film formation control via the included 7" touch panel, the new optional IntelliLink enables remote management from a Windows PC. With IntelliLink, almost all operations, except for the main controls of the equipment (vacuum pumping, vent operation, interlock monitoring), can be performed from the PC. (1) System live monitoring (equipment operation status monitor) - Chamber pressure, MFC flow rate settings - Film thickness display, settings, calibration - Stage rotation, heating, shutter opening and closing operations (2) Error analysis (3) Recipe creation, saving, uploading (4) Data logging, CSV format output → Data sharing with other devices ◉ Connect to the equipment's rear Ethernet port using the included USB cable.

Low-cost minimum necessary configuration (manual control) tubular furnace, diffusion furnace, and thermal CVD applicable Vertical experimental furnace with manual lift for small substrates from small samples to 3-inch wafers Ideal low-cost vertical furnace for basic experiments in university and corporate research laboratories 【Applications】 ◉ Thermal processing for semiconductors, solar cells, fuel cells, electronic substrates, etc. ◉ Basic experiments: simple thermal processing experiments using vertical tubular furnaces, oxidation diffusion furnaces, LPCVD, etc. 【Main Specifications】 - Maximum furnace temperature: 1200℃, maximum sample temperature: 950℃ - Small sample size: accommodates sizes from a few millimeters to 3-inch wafers - Number of substrates: approximately 1 to 3 sheets - Quartz susceptor with manual lift: includes stop position scale and clamp - Furnace core tube: Φ100 x Φ95 x 470L mm - Lifting: manual rotating handle - Temperature control: PID programmable temperature controller - Thermocouples: 2 pairs of K-type thermocouples x1 (for control, over-temperature), K-type bare wire (for furnace core temperature measurement)