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□◼️X-ray CT imaging device (medium) ◼️□ Voxia series medium size 6-axis CT imaging axis configuration Custom design available to suit applications

The Voxia series is custom-made. The specifications of the Voxia box below are merely reference configuration examples. - X-ray tube voltage: 20-90kV - Focus size: 7um or 5um - Detector: 3.2 million pixels - Detection area: 159 x 159mm - 6-axis stage - Maximum sample size: Φ120mm - Maximum sample weight: 1kg

□◼️Desktop X-ray CT imaging device◼️□ Compact, space-saving, and high-level analysis at an affordable price!

The Voxia series is custom-made. The following is just a reference configuration example. - X-ray tube voltage: 20-90kV or 40-130kV - Focus size: 7um, mataha5um - Detector: 3.2 million pixels - Detection area: 159 x 159mm - 2-axis stage: XY axis - Maximum sample size: Φ120mm

Maximum operating temperature 2000℃ Semi-automatic control Ultra-high temperature experimental furnace (carbon furnace, tungsten metal furnace) Compact and space-saving experimental furnace

◆Basic Specifications◆ - Heater: C/C composite, PG coated C/C composite (carbon furnace), tungsten (metal furnace) - Insulation material: Graphite felt (carbon furnace), tungsten/molybdenum (metal furnace), or W/Mo multilayer shield - Surface heater heating range: Φ2 inch to Φ6 inch - Cylindrical heater heating range: Φ30 to Φ80 x Depth Max 100(H) mm - 7-inch touch panel operation - Digital vacuum gauge - MFC maximum 3 systems automatic adjustment (or float meter manual flow adjustment) - Temperature control: Digital programmable controller, C thermocouple - Achievable vacuum level: 1x10-2 Pascal (*only in empty furnace) - Primary power supply specifications: AC200V 50/60HZ three-phase 50A NFB - Cooling water: 8L/min, 0.4Mpa 25 to 30℃ ◆Options◆ - Vacuum exhaust system: Rotary pump, high vacuum pump, valves

6 to 8 inch ultra-high temperature wafer annealing equipment, a high-performance machine that widely accommodates various purposes from research and development to small-scale production.

A dedicated ultra-high temperature wafer annealing furnace focusing on safety and operability for "wafer baking." ◆ Main Specifications ◆ - Insulation materials: Graphite felt, tungsten, molybdenum, alumina, zirconia, etc. (*Varies depending on furnace design) - Chamber opening and closing: Top loading, linear drive operation (or manual opening and closing with damper) - Achievable vacuum level: 1x10-2 Pascal (in the case of an empty furnace) - Vacuum pump: Dry scroll pump - Vacuum gauge: Wide-range vacuum gauge from atmospheric pressure to 10-9 mbar - Thermocouple: Type C thermocouple (Type K may be used depending on design temperature conditions) - Interlock: Chamber over-temperature, heater over-temperature, cooling water cutoff, chamber opening and closing, vacuum level - Power supply: 200V, 50A (*Varies by specification) 3-phase - Cooling water: 8L/min, 0.4Mpa - Dimensions (body): 1240(W) x 590(D) x 1160(H) mm ◆ Options ◆ - Additional thermocouple for measuring temperature inside the crucible - High vacuum pump (turbo molecular pump) - Front view port - Full auto control - Substrate rotation stage - Communication function (using temperature control function) or SECS/GEM communication

Tabletop small-sized experimental furnace - space-saving with a maximum operating temperature of 2000℃! We also manufacture metal furnaces for reducing atmospheres.

◆Device Configuration◆ We will propose the desired configuration according to your budget and purpose. (A) Minimum configuration: Chamber + Temperature control unit (B) Above minimum configuration (A) + Vacuum exhaust system (pump, gauge, valve, vacuum piping) ◆Basic Specifications◆ - Heater: C/C composite, PG coated C/C composite (carbon furnace), tungsten (metal furnace) - Insulation material: Graphite felt (carbon furnace), tungsten/molybdenum (metal furnace), or tungsten/molybdenum multilayer shield (metal furnace) - Temperature control: Digital programmable controller, C thermocouple - Achievable vacuum level: 1x10-2 Pascal (*However, in the case of an empty furnace) - Power specifications: AC200V 50/60HZ three-phase 6KVA - Cooling water: 3L/min, 0.4Mpa 25-30℃ ◆Control Box Specifications◆ - Programmable temperature controller - DC power supply unit or external transformer box - Current and voltage meter - Heater circuit trip switch - Main power switch ◆Options◆ - Vacuum exhaust system - Custom crucible Others

◉ Short time: Easily conduct graphene synthesis experiments in just 30 minutes per batch. ◉ High-precision temperature and pressure control. ◉ Sophisticated software.

◆Features◆ - Easy operation! Control and recipe management via a 5-inch touch panel - Capable of creating programs with up to 30 recipes and 30 steps - Includes PC software for USB cable connection, offline recipe creation on PC → upload/download to the device, CSV data output - Maximum sample size: 40 x 40mm: Copper (nickel) foil, SiO2/Si, Al2O3/Si substrates, etc. ◆Model: nanoCVD-8G (for Graphene)◆ - Vacuum process control for graphene production - Standard rotary pump included (optional: dry scroll pump) - Three gas supply systems (Ar, H2, CH4) - Sample heating stage Max 1100℃ - K-type thermocouple * Raw materials such as Ar, H2, CH4 and raw material supply equipment are not included.

High-performance, cost-effective RF/DC magnetron sputtering system for research and development.

◉ All operations and recipe management are centrally controlled via a 7" touch panel. ◉ User-registered film recipes and process controls (vacuum draw/venting, film deposition rate, APC automatic pressure control, cathode switching, shutter opening and closing, heating/lifting and rotating adjustments, etc.) can be fully automated (manual operation is also possible). The accompanying software for Windows PC (IntelliLink) allows for equipment monitoring and data logging. 【Main Specifications】 - RF/DC magnetron system - 2-inch magnetron cathodes x up to 3 - RF power: 150W automatic matching - DC power: 780W - Substrate size: up to 4 inches - Substrate rotation, z-shift stage, heating (500℃) - Process gas control: MFC x 1 (Ar standard, up to 3 additional systems: N2, O2) - APC automatic control (capacitance manometer *optional) - Quartz oscillator film thickness monitor - Shutters - Dimensions: 804(W) x 570(D) x 600(H) mm - Weight: approximately 70 kg - Power supply: 200VAC 50/60Hz 15A - Chamber size: Φ225 (inner diameter) x 250 mm - Vacuum system: TMP + RP (dry pump optional)

<30W Low power - Etching control precision 10mW Achieving damage-free and delicate etching processing.

**Features and Main Applications** • 2D (Transition Metal Chalcogenides, Graphene exfoliation after material transfer): Surface modification cleaning • Removal of polymer resists such as PMMA and PPA • Surface modification and etching on substrates prone to damage, such as Teflon substrates • h-BN sidewall etching (*'Fluorine Gas Supply Module' option, requires SF6 gas system) • SiO2 etching (*'Fluorine Gas Supply Module' option, requires CHF3 gas system) **Specifications** ◉ Compatible substrates: Up to Φ6 inches ◉ Easy operation with 7" touch panel and PLC automatic sequence ◉ APC automatic pressure control ◉ Up to 3 gas systems (Ar, O2 standard included) *N2 or fluorine gas system can be added ◉ Included PC software: Automatic etching recipe creation, saving, and data logging **Dimensions and Utilities** Dimensions: 750 (W) x 500 (D) x 400 (H) mm Power supply: 200V single phase 15A Process gas: 0.17Mpa 99.99% recommended Vent gas: 34-41kpa Cooling water: 1L/min, 400kpa, 18-20℃ Compressed air: 413-550Kpa

Max 1000℃, MFC maximum 3 systems, APC pressure control, compatible with 4" or 6" substrates, high vacuum annealing equipment (<5 × 10^-7 mbar)

◉ Substrate size: Φ4 inch or 6 inch ◉ SUS304 water-cooled chamber ◉ Achievable pressure: 5x10-5 Pascal ◉ Up to 3 systems of process gas input ◉ Up to 3 mass flow controllers (optional) ◉ 7" HMI touch panel ◉ High-precision wide-range vacuum gauge: 10-9 to 1000 mbar ◉ USB port with PC data logging function ◉ Turbo molecular pump: EXT75DX (Edwards) ◉ Rotary pump: RV3/RV8 (Edwards) (*can be changed to a dry pump) ◉ K-type thermocouple (for heater control) included

We have incorporated all the latest vacuum deposition technology into a compact benchtop-sized device that can effectively utilize limited lab space.

◉Dimensions: 804(W) x 530(D) x 600(H)mm ◉Weight: 40kg to 70kg (depending on equipment configuration) ◉Excellent basic performance ・Achievable vacuum level 5x10-5 Pascal ・Equipped with high-performance turbo molecular pump ・Up to Φ4 inch substrate ◉Evaporation sources ・Metal evaporation source TE x up to 2 units ・Organic evaporation source LTE x up to 4 units (if mixed with resistive heating TE, up to 2 units) ◉7" touch panel ◉Continuous film deposition ・Automatic control of deposition program ・30 types of recipes registered ・High-precision wide-range vacuum gauge ◉Rich options ・Substrate rotation ・Up and down movement with 300mm stroke ・Substrate shutter ・Dry pump (RP standard) ・Connect to Windows PC via USB for log storage and management

Composite thin film experimental device nanoPVD-ST15A capable of mixed installation of vacuum deposition (metal and organic deposition sources) and sputtering cathodes.

◆Film Formation Source◆ - Φ2 inch Magnetron Sputter Cathode x 1 - Resistance Heating Evaporation Source (up to 2) - Organic Evaporation Source (up to 2) ◆Substrate Size◆ - Up to Φ4 inch/Φ100 mm Substrate Holder (custom holder available upon consultation) ◆Film Thickness Sensor◆ - Quartz Crystal Film Thickness Sensor x 1 ◆Vacuum Exhaust◆ - Turbo Molecular Pump, Rotary Pump ◆Included Software◆ - IntelliLink Windows PC Remote Monitoring Software ◆Options◆ - Substrate Heating Heater Max 500℃ - Dry Scroll Pump ◆Utilities◆ - Power Supply: AC200V Single Phase 50/60HZ 15A - Process Gas: 0.2Mpa - Vent Gas: 0.04Mpa - Compressed Air: 0.6Mpa - Cooling Water: 2L/min 0.2Mpa ◆Main Applications◆ - New Material Development - Fuel Cells - Others

Due to its modular embedded design, it is possible to flexibly assemble dedicated equipment according to the required film formation method. A compact thin-film experimental device that can accommodate various research applications.

【MiniLab Flexible Thin Film Experimental Device Configuration Modules】 ◉ Manufacturing Range Resistance Heating Deposition (TE), Organic Film Deposition (LTE), Electron Beam Deposition (EB), RF/DC Sputtering (SP), T-CVD/PE-CVD, Plasma Etching (RIE) ◉ Chambers ・026 (26 Liters) - TE/LTE/SP/CVD/Etch/*Globe Box option: Max Φ6 inch ・060 (60 Liters) - TE/LTE/EB/SP/Etch/: Max Φ8 inch ・080 (80 Liters) - TE/LTE/EB/SP/Etch/: Max Φ10 inch ・090 (90 Liters) *Globe Box option - TE/LTE/EB/SP/Etch/: Max Φ10 inch ・125 (125 Liters) - TE/LTE/EB/SP/Etch/CVD: Max Φ12 inch * For other specifications, please refer to our website.

Compact and space-saving! Ideal for research and development. Flexible configuration for purposes such as deposition, sputtering, and annealing.

The MiniLab-026 is a compact thin film experimental device that uses the smallest 26L volume chamber in the series. 【Small Footprint & Space-Saving】 - Single rack type (MiniLab-026): 590(W) x 590(D)mm 【Excellent Operability & Intuitive Operation Screen】 Windows PC or 7” touch panel. Easy operation that does not require expertise, with maximum safety considerations. 【Main Specifications】 ◉ Chamber: SUS304 clamshell type ◉ All components housed in a 19-inch single rack ◉ Resistance heating evaporation source (up to 4 sources), organic evaporation source (up to 4 sources), or Φ2" magnetron (up to 3 units), substrate heating stage, etc. ◉ High precision film thickness control ◉ Turbo molecular pump + rotary pump (dry pump option) ◉ Glove box connection specification (*specification consultation required) ◉ Abundant options: substrate heating/cooling, rotation, special substrate holder, etc. *For more detailed specifications of the MiniLab series, please contact us.

A semi-custom-made thin film experimental device that can be assembled with the desired configuration for processes such as evaporation, sputtering, electron beam (EB) deposition, and annealing.

【Main Specifications】 - SUS304 60ℓ volume 400x400x400mm front-loading chamber *Large chamber option MiniLab-070 (450 x 450 x 450) - Maximum substrate size: Φ8 inch - Pump: Turbo molecular pump, rotary pump (dry pump also available) - Vacuum exhaust: Automatic control of vacuum/vent - Resistance heating deposition: Up to 4 sources (Model TE1 to TE4 deposition sources) - Organic deposition: Up to 4 sources (Model LTEC-1cc/5cc) - Electron beam deposition: 7cc crucible x 6 (or 4cc crucible x 8) - Φ2 to 4 inch magnetron sputtering cathode x up to 4 sources - Process control: Manual/automatic continuous multilayer film and simultaneous film formation, APC automatic control - Film thickness monitor: Quartz crystal sensor head x 2 - Film thickness control: Inficon SQM-160 (or SQC-310) 2ch/4ch thin film controller - Utilities: Power supply 200V three-phase 15A, water cooling 3ℓ/min, N2 vent 0.1Mkpa - Other options: Substrate heating, cooling, substrate lifting/rotation, plasma etching, dry pump, load lock mechanism

Flexible configuration available upon request for processes such as evaporation, sputtering, and EB. Adopts a tall chamber with a height of 570mm, contributing to improved uniformity during evaporation.

【Main Specifications】 - SUS304 80ℓ volume 400x400x570mm front-loading chamber - Pump: Turbo molecular pump, rotary pump (dry pump also available) - Vacuum exhaust: Automatic control of vacuum/vent - Resistance heating deposition: Up to 4 source points (Model TE1 to TE4 deposition sources) - Organic deposition: Up to 4 sources (Model LTEC-1cc/5cc) - EB electron beam deposition source: 7cc crucible x 6 (or 4cc crucible x 8) - Φ2 to 4 inch magnetron sputtering cathode x up to 4 sources - Process control: Manual or automatic multilayer continuous film deposition/multiple simultaneous film deposition, APC automatic control - Film thickness monitor: Quartz crystal oscillator sensor head x 4 - Film thickness control: Inficon SQM-160 (or SQC-310) multi-channel film deposition controller - Utilities: Power supply 200V three-phase 15A, water cooling 3ℓ/min, N2 vent 0.1Mkpa - Other options: Substrate heating, cooling, substrate elevation/rotation, dry etching, dry scroll pump, load lock mechanism

Storage-compatible glove box PVD flexible thin film experimental device, featuring a tall chamber with a height of 570mm, contributes to improved uniformity during deposition.

【Main Specifications】 - SUS304 80ℓ volume 400x400x570mm front-loading chamber - Pump: Turbo molecular pump, rotary pump (dry pump also available) - Vacuum exhaust: Automatic control of vacuum/vent - Resistance heating deposition: Up to 4 sources (Model TE1 to TE4 deposition sources) - Organic deposition: Up to 4 sources (Model LTEC-1cc/5cc) - EB electron beam deposition source: 7cc crucible x 6 (or 4cc crucible x 8) - Φ2 to 4 inch magnetron sputtering cathode x up to 4 sources - Process control: Manual or automatic continuous multilayer film/simultaneous film formation, APC automatic control - Film thickness monitor: Quartz crystal oscillator sensor head x 4 - Film thickness control: Inficon SQM-160 (or SQC-310) multi-channel thin film controller - Utilities: Power supply 200V three-phase 15A, water cooling 3ℓ/min, N2 vent 0.1Mkpa - Other options: Substrate heating, cooling, substrate elevation/rotation, dry etching, dry pump