Soft Etching Device [nanoETCH]
<30W Low power - Etching control precision 10mW Achieving damage-free and delicate etching processing.
【nanoETCH】Model. ETCH5A Achieves fine and damage-free etching processing with low output RF etching at <30W (control accuracy 10mA). A jointly developed product with the graphene research group at the University of Manchester, led by Nobel Prize winners who discovered graphene in 2010.
basic information
**Features and Main Applications** • 2D (Transition Metal Chalcogenides, Graphene exfoliation after material transfer): Surface modification cleaning • Removal of polymer resists such as PMMA and PPA • Surface modification and etching on substrates prone to damage, such as Teflon substrates • h-BN sidewall etching (*'Fluorine Gas Supply Module' option, requires SF6 gas system) • SiO2 etching (*'Fluorine Gas Supply Module' option, requires CHF3 gas system) **Specifications** ◉ Compatible substrates: Up to Φ6 inches ◉ Easy operation with 7" touch panel and PLC automatic sequence ◉ APC automatic pressure control ◉ Up to 3 gas systems (Ar, O2 standard included) *N2 or fluorine gas system can be added ◉ Included PC software: Automatic etching recipe creation, saving, and data logging **Dimensions and Utilities** Dimensions: 750 (W) x 500 (D) x 400 (H) mm Power supply: 200V single phase 15A Process gas: 0.17Mpa 99.99% recommended Vent gas: 34-41kpa Cooling water: 1L/min, 400kpa, 18-20℃ Compressed air: 413-550Kpa
Price information
Please contact us.
Delivery Time
Model number/Brand name
nanoETCH Model.ETCH5A
Applications/Examples of results
2D applications such as graphene and TMDC Resist removal such as PPA and PPMA Damage-free etching on substrates like Teflon, etc.
Related Videos
catalog(37)
Download All Catalogs
News about this product(41)
-

BH Series [UHV Compatible Ultra-High Temperature Vacuum Thin Film Experiment Substrate Heater] Max 1800℃
It can be applied to various vacuum thin film experiments such as PVD (sputtering, evaporation, EB, etc.), CVD, high-temperature vacuum annealing, and high-temperature sample analysis substrate stages. We offer custom-made solutions to meet various specifications. 【Features】 ● Semi-custom product. Designed and manufactured according to your requests. ● Easy replacement of the auxiliary heater wire. ● Easy installation and maintenance (M6 stud bolts, supports). ● Compatible with RF/DC bias and substrate rotation. 【Standard Accessories】 ● Thermocouple: wire type with alumina insulating sleeve. ● Mounting stud bolts. 【Options】 ● RF (150W)/DC (1KW) bias application. ● Non-standard heater wires (Nb, Mo, Pt/Re, WRe, etc.). ● Substrate holding clips. ● Mounting brackets. ● Substrate holders. ● Tapped holes for holder installation. ● Change of top plate material (PBN, quartz, carbon, Inconel, etc.). ● Additional thermocouples for overheating. ● Base flange and vacuum feedthrough.
-

☆★☆【nanoETCH】Soft Etching Device☆★☆
<30W Low Power Control for Damage-Free Etching Achieves delicate etching processes with an output control precision of 10mW. A jointly developed product with the graphene research group at the University of Manchester, led by Nobel Prize winners who discovered graphene in 2010. 【Features】 • 2D (Transition Metal Chalcogenides, graphene delamination after material transfer): Surface modification cleaning • Removal of polymer resists such as PMMA and PPA • Surface modification and etching on substrates prone to damage, such as Teflon substrates • h-BN sidewall etching (*Option for "Fluorine Gas Supply Module," requires SF6 gas system) • SiO2 etching (*Option for "Fluorine Gas Supply Module," requires CHF3 gas system) 【Specifications】 ◉ Compatible substrates: Up to Φ6 inches ◉ Easy operation with a 7" touch panel and PLC automatic sequencing ◉ Automatic pressure control (APC) ◉ One Ar gas line (standard) + up to three additional lines for N2 and O2 ◉ Connects to a Windows PC with a USB port for automatic etching recipe creation and storage. Data logging on PC.
-
![Multisource Simultaneous Sputtering Device [MiniLab-S125]](https://image.mono.ipros.com/public/news/image/1/2d3/12548/IPROS06137231868342339221.jpeg?w=280&h=280)
【MiniLab-125】 Multi-target sputtering system (compatible with Φ8") equipped with a 1000℃ heater stage (SiC coating)! Compact size!
Multifunctional Multi-Sputtering Device (Compatible with Φ8inch Substrates) - Triple-source simultaneous deposition + Single-source Pulse DC sputtering - Flexible arrangement of RF500W and DC850W power supplies to the three-source cathodes (Source 1, 2, 3) - Equipped with a 5KW Pulse DC power supply → Used with dedicated cathode (4) - Substrate heating stage Max 800℃ (SiC-coated heater can achieve Max 1000℃) - MFC x 3 systems (Ar, O2, N2) for reactive sputtering - Main chamber RIE etching stage RF300W - LL chamber <30W low-power controlled soft etching - Unique "Soft-Etching" technology reduces substrate damage through substrate bias - Touch panel or Windows PC operation: All operations can be performed via touch panel/PC without dispersing control. - Equipment installation dimensions: 1,960(W) x 1,100(D) x 1,700(H) mm - Multi-chamber configurations are also possible. ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc., can also be configured.
-

Multi-functional Sputtering System 【MiniLab-S060】
4 cathodes with Φ2 inch mounted Simultaneous film formation: 3-component simultaneous film formation (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed from the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coat) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
-

★☆★☆ MiniLab Series Flexible Thin Film Experimental Device ★☆★☆
The MiniLab thin film experimental device allows for the construction of a compact, semi-customized system that eliminates waste by incorporating the optimal components and control modules based on the required film formation methods and materials from a wide range of options. By equipping a modular control unit with a Plug&Play feel, the application range expands, enabling various thin film process experiments. 【MiniLab Thin Film Experimental Device Configuration Modules】 ◎ Manufacturing Range Resistive heating evaporation (TE), organic evaporation (LTE), electron beam evaporation (EB), sputtering (SP), CVD, dry etching 【Small Footprint & Space-Saving】 - Single rack type (026): 590(W) x 590(D) mm - Dual rack type (060): 1200(W) x 590(D) mm - Triple rack type (125): 1770(W) x 755(D) mm 【Excellent Operability & Intuitive Operation Screen】 Windows PC or 7” touch panel. Easy operation that does not require expertise, with maximum consideration for safety. All operations except for internal component adjustments and material exchanges are performed via the PC/HMI screen.
Recommended products
Distributors
【Endless possibility_thermal engineering...】 Our company sells vacuum thin film devices for semiconductor and electronic device fundamental research, ultra-high temperature heaters for CVD substrate heating, experimental furnaces, temperature measurement equipment, and more. To meet the endless demand for "heat," which is indispensable in any era, and to respond to various requests in the field of fundamental technology development, we aim to introduce the latest equipment and contribute to research and development in Japan.











































