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◉ High-efficiency and high-precision process control using cold wall method ◉ Rapid heating: 1100℃ in approximately 3 minutes ◉ High-precision temperature control: ±1℃ ◉ High-precision APC automatic pressure control system: 3 gas lines (Ar, H2, CH4) ◉ Standard recipe for graphene production included ◉ Compact size: 405(W) x 415(D) x 280(H)mm ◆Features◆ - Easy operation! Operation and recipe management via 5-inch touch panel - Up to 30 recipes and 30-step program creation possible - PC software included with USB cable connection, offline recipe creation on PC → upload/download to/from the device, CSV data output - Maximum sample size: 40 x 40mm: copper (nickel) foil, SiO2/Si, Al2O3/Si substrates, etc. ◆Model: nanoCVD-8G◆ - Standard program for graphene included - High vacuum process, high-precision process pressure control - Rotary pump included as standard - 3 gas supply lines (Ar, H2, CH4) - Sample heating stage (high-purity graphite) Max 1100℃ - K-type thermocouple

◉ Maximum operating temperature Max 2000℃ ◉ PLC semi-automatic control A higher model of the tabletop Mini-BENCH with semi-automatic control Automatically controls each process of "vacuum/purge cycle," "gas replacement," and "venting" Maximum operating temperature 2000℃ Semi-automatic control ultra-high temperature experimental furnace (carbon furnace, tungsten metal furnace) Compact and space-saving experimental furnace ◉ Effective heating range (crucible dimensions) - Planar heater heating range: Φ2 inch to Φ6 inch - Cylindrical heater heating range: Φ30 to Φ80 x Depth Max 100(H) mm ◉ Up to 3 MFC systems for automatic flow control (or manual adjustment) ◉ APC automatic pressure control ◉ Ensures safety during operation Monitors abnormal cooling water, chamber temperature, and overpressure. Made of SUS, the robust water-cooled chamber can be safely used even during continuous operation at maximum temperature. ◉ Compact and space-saving Width 603 x Depth 603 x Height 1,160 mm (*Installed inside rotary pump housing) Various sample heating experiments, such as ultra-high temperature heating of small samples and new material research and development, can be easily performed with simple operations. The main unit is compact yet can be used for research and development in various fields.

Ideal for organic thin film deposition applications such as OLED, OPV, and OTFT. Utilizes low-temperature organic deposition sources with excellent temperature responsiveness/stability and high-temperature deposition sources for metal films. A fully automated R&D vacuum deposition system with easy touch panel operation, excellent operability, and maintainability. An intuitive HMI that allows anyone to operate without complicated procedures. Connects to a PC via USB cable for log saving and creating and storing automatic deposition recipes. ◉ Compact size: 804(W) x 530(D) x 600(H)mm ◉ Weight: 40kg to 70kg (depending on equipment configuration) ◉ Excellent basic performance - Achievable vacuum level: 5x10-5 Pascal - Equipped with a high-performance turbo molecular pump - Φ2 inch or Φ4 inch substrates ◉ Deposition sources - Resistance heating deposition source TE x up to 2 units - Organic deposition source LTE x up to 4 units (if mixed with resistance heating TE, up to 2 units) ◉ 7" touch panel ◉ Continuous deposition - Automatic control of deposition programs - 30 types of registered recipes - High-precision wide-range vacuum gauge ◉ Abundant options - Substrate rotation - Up and down lift with 300mm stroke - Substrate shutter - Dry pump (RP standard)

The HTE heater is a high-temperature heating heater for vacuum devices with a maximum operating temperature of 1500°C. It can evaporate materials with high evaporation temperatures, making it suitable for a wide range of applications as a vacuum high-temperature heater and deposition cell, from low-temperature organic deposition (up to 800°C) cells to high-temperature resistance heating deposition (up to 1500°C) MBE cells. Shutter actuators and water-cooled jackets are also available. The high-temperature heater specification above 800°C is designed with internal shielding, considering insulation and thermal shielding. 【Main Specifications】 ■ Maximum control temperature: 800°C or 1500°C ■ Operating environment: In vacuum or inert gas (*O2 up to 800°C) ■ Heater: Tungsten filament ■ Crucible volume: 1cc (maximum filling amount 1.5cc) ■ Crucible material: Alumina ■ Case material: SUS304 or Molybdenum ■ Thermocouple: K or C 【Options】 ⚫ Crucible material: PBN, Graphite, Quartz ⚫ Heater: NiCr wire, Kanthal wire (*for O2) ⚫ Crucible volume: 10cc (maximum filling amount 15cc) ⚫ Shutter: Pneumatic or motor-driven ⚫ Water-cooled jacket ⚫ Controller (for heater and shutter control)

Max 1000℃, MFC up to 3 systems, APC pressure control, compatible with substrates from 4" to a maximum of 6", high vacuum annealing device (<5 × 10-7 mbar) [ANNEAL] is a research and development annealing device capable of high-temperature heat treatment of substrates such as wafers in a stable process atmosphere. It allows high-temperature processing up to 1000℃ using a heating stage installed in a high vacuum water-cooled SUS chamber. A heat shield is installed inside the chamber to ensure safety through interlock. The mass flow controller can be expanded to a maximum of 3 systems, enabling firing operations with precisely adjusted process gas pressure (APC automatic process control system option). Additionally, there are many options available, including a front view port, dry scroll pump, special substrate holder, and additional thermocouples. The heating stage inside the chamber has three variations depending on the process gas atmosphere and treatment temperature: - Halogen lamp heater: Max 500℃ - C/C composite heater: Max 1000℃ (in vacuum, inert gas only) - SiC coating heater: Max 1000℃ (vacuum, inert gas, O2)