Multi-functional Sputtering Device 【MiniLab-S060】
A compact multi-thin film device that incorporates sputtering, deposition, electron beam (EB), and annealing thin film modules in a 60-liter volume chamber, suitable for various applications.
4 cathodes with Φ2 inch mounted Simultaneous film formation: 3-component simultaneous film formation (RF 500W or DC 850W) + HiPIMS (Pulse DC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed from the HMI screen using the plasma relay switch MFC x 3 systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coat) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Plasma etching can be installed in either the main chamber or the load lock chamber. ● Mixed specifications such as resistance heating deposition, organic material deposition, EB deposition, and PECVD can also be configured.
basic information
【Main Specifications】 - SUS304 60ℓ volume 400x400x400mm front-loading chamber *Large chamber option MiniLab-070 (450 x 450 x 450) available - Maximum substrate size: Φ8 inch - Pump: Turbo molecular pump, rotary pump (dry pump available) - Vacuum exhaust: Automatic control of vacuum/vent - Resistance heating deposition: Up to 4 source points (Model. TE1 to TE4 deposition sources) - Organic deposition: Up to 4 sources (Model. LTEC-1cc/5cc) - EB electron beam deposition source: 7cc crucible x 6 (or 4cc crucible x 8) - Φ2 to 4 inch magnetron sputtering cathode x up to 4 sources - Process control: Manual/automatic multilayer film, simultaneous film formation, APC automatic control - Film thickness monitor: Quartz crystal sensor head - Film thickness control: Inficon SQM-160 (or SQC-310) 2ch/4ch thin film controller - Other options: Substrate heating, cooling, substrate lifting/rotation, plasma etching, dry pump, load lock mechanism
Price range
Delivery Time
Model number/Brand name
MiniLab-S060A
Applications/Examples of results
Manufacturing factories for electronic devices, solar cells, displays, universities and research institutions, pharmaceutical and chemical factories, food factories, and many others.
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MiniLab-WCF Ultra High Temperature Wafer Annealing Furnace Max 2000℃_Dedicated for High-Temperature Wafer Sintering (6inch to 8inch)
Max 2000℃ Φ6〜8 inch wafer dedicated high-temperature annealing device, capable of small-scale production multi-atmosphere wafer annealing device. ◾️ Max 2000℃ ◾️ Effective heating range: Φ6〜Φ8 inch single wafer type or batch type (multi-stage 5 wafer cassette) ◾️ Heater control: 1 zone or 2 zones (cascade control) ◾️ Heater materials: ・C/C composite: Φ6〜Φ8 inch ・PG coating high-purity graphite: Φ6〜Φ8 inch ◾️ Operating atmosphere: ・Vacuum (1x10-2Pa), inert gas (Ar, N2) ◾️ PLC semi-automatic operation ・Automatic sequence control for vacuum/purge cycle and venting ・Fully automatic operation (optional) ・Touch panel operation, allowing centralized management without dispersed operations. ◾️ Process pressure control ・APC control (MFC flow or automatic opening adjustment valve PID loop control) ・Maximum 3 systems of MFC flow automatic control, or manual adjustment of float meter/needle valve ◾️ PLOT screen graph display, CSV data output
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☆★☆★【nanoCVD-8G】Graphene Synthesis Device ☆★☆★
◉ High-efficiency and high-precision process control using cold wall method ◉ Rapid heating: 1100℃ in approximately 3 minutes ◉ High-precision temperature control: ±1℃ ◉ High-precision APC automatic pressure control system: 3 gas lines (Ar, H2, CH4) ◉ Standard recipe for graphene production included ◉ Compact size: 405(W) x 415(D) x 280(H)mm ◆Features◆ - Easy operation! Operation and recipe management via 5-inch touch panel - Up to 30 recipes and 30-step program creation possible - PC software included with USB cable connection, offline recipe creation on PC → upload/download to/from the device, CSV data output - Maximum sample size: 40 x 40mm: copper (nickel) foil, SiO2/Si, Al2O3/Si substrates, etc. ◆Model: nanoCVD-8G◆ - Standard program for graphene included - High vacuum process, high-precision process pressure control - Rotary pump included as standard - 3 gas supply lines (Ar, H2, CH4) - Sample heating stage (high-purity graphite) Max 1100℃ - K-type thermocouple
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The catalog for the MiniLab Flexible Thin Film Experimental Device has been renewed!
We have completely renewed the catalog for the MiniLab series thin film experimental equipment. 【Features of the MiniLab Series】 ◉ Supports sputtering, evaporation (resistive heating, organic, EB), annealing, plasma etching, etc. ◉ Modular design allows for flexible combinations of components (source hybrid types and multi-chamber configurations are possible) ◉ Compact, space-saving design (width 1,200 x depth 560 mm) ◉ Excellent operability: intuitive interface allows for centralized management of all operations via a touch panel without dispersion. We are confident that this will be of great assistance in research and development settings. Please consider it.
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4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
