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  ◉ nanoETCH Soft Etching Device(39)

  【nanoETCH】Model. ETCH5A Achieves fine and damage-free etching processing with low output RF etching at <30W (control accuracy 10mA). 【Features and Main Applications】 • 2D (transition metal chalcogenides, graphene delamination after material transfer): surface modification cleaning • Removal of polymer resists such as PMMA and PPA • Surface modification and etching on substrates prone to damage, such as Teflon substrates • h-BN sidewall etching (*'Fluorine Gas Supply Module' option, requires SF6 gas system) • SiO2 etching (*'Fluorine Gas Supply Module' option, requires CHF3 gas system) 【Specifications】 ◉ Compatible substrates: up to Φ6 inch ◉ Easy operation with 7" touch panel and PLC automatic sequence ◉ APC automatic pressure control ◉ Up to 3 gas systems (Ar, O2 standard included) *N2 or fluorine gas system can be added ◉ Includes PC software: automatic etching recipe creation, saving, and data logging

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  MiniLab Series Experimental Equipment(44)

  The "MiniLab series experimental device" allows for the easy construction of a compact and efficient device configuration by selecting the appropriate modules based on the required membrane type and application from a wide range of options, making it a customized product without waste. By equipping a modular control unit with a Plug&Play feel, the range of applications expands, enabling its use in various process experimental devices.

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  ◉ 【MiniLab-026】Small Vacuum Deposition Device(39)

  ◉ Can be stored in a 19-inch single rack frame, allowing for installation in a small space ◉ Equipped with up to 4 organic material deposition sources and up to 2 metal deposition sources ◉ Also available as a glove box integrated model ◉ A wide range of optional parts available This is an entry-level small vacuum deposition device for research and development purposes. It allows for the reconfiguration of metal material deposition sources (TE1-Box type or electrode modules "TE1 to TE4") and can be controlled automatically or manually using the corresponding TEC controller. It offers a variety of options including shutters for substrates and sources, film thickness monitors, vacuum gauges, substrate holders, substrate heating heaters, substrate rotation and lifting stages, and RF/DC bias application. Continuous multilayer film control and simultaneous film deposition (for organic film materials only) are also possible.

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  ◉ 【MiniLab-060】Flexible Thin Film Experimental Device(41)

  A semi-custom-made thin film experimental device that can be flexibly assembled according to your desired configuration, including deposition, sputtering, EB, and annealing modules. Possible combinations from the following deposition sources: - Resistance heating deposition source x up to 4 - Organic deposition source x up to 4 - Electron beam deposition - 2-inch magnetron sputtering cathodes x 4 [Main Specifications] - SUS304 60ℓ volume chamber 400x400x400mm - Pump: Turbo molecular pump, rotary pump (dry pump also available) - Vacuum exhaust: Automatic control of vacuum/vent - Metal film deposition: Up to 4 points - Organic film deposition: Up to 4 points - EB electron beam deposition source: 7cc crucible x 6 (or 4cc crucible x 8) - Φ2 to 4 inch magnetron sputtering cathodes x up to 4 - Process control: Manual/automatic multilayer film and simultaneous deposition, APC automatic control available (*optional) - Film thickness monitor: Quartz crystal oscillator sensor head x 2 - Utilities: Power supply 200V three-phase 13A, water cooling 3ℓ/min, N2 vent gas 0.1Mkpa - Other options: Substrate heating, cooling, substrate elevation/rotation, bias stage, dry pump, load lock

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  ◉ 【MiniLab-080】Flexible Thin Film Experimental Device(39)

  The ML-080, consisting of a D-type box chamber with a volume of 80 liters and dimensions of 400(W)x400(D)x570(H)mm, has a longer TS distance adjustment range by increasing the height of the chamber compared to the 060 model, which improves film uniformity during deposition on large-diameter substrates. It is a higher model than the ML-060, which can also add a load lock mechanism. Like the 060, it is compact yet supports a wide range of applications including resistance heating deposition (metal/insulator/organic materials), EB deposition, RF/DC compatible magnetron sputtering, dry etching, CVD, and annealing. - Resistance heating deposition source x up to 4 - Organic deposition source x up to 4 - Magnetron sputtering cathodes x 4 - Electron beam deposition - Maximum Φ8 inch heating stage (standard 500℃, Max 1000℃) - RF/DC etching system - CVD (thermal CVD, PECVD)

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  ◉ 【MiniLab-090】Flexible Thin Film Experimental Device(39)

  MiniLab-080 is a glove box model designed to accommodate an 80ℓ large volume MiniLab-080 chamber within a glove box bench structure. It features a slide-open and close chamber that maximizes the use of the workbench, and a rear-opening door designed with maintenance in mind. Samples processed can be handled consistently in a controlled environment within the glove box without exposure to the atmosphere or moisture. For specifications of the gas purification unit, please refer to the GB model. - Resistance heating evaporation source x up to 4 - Organic evaporation source x up to 4 - Magnetron sputtering cathode x 4 - Electron beam evaporation - Maximum Φ8 inch heating stage (standard 500℃, Max 1000℃) - RF/DC etching system - CVD (thermal CVD, PECVD)

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  MiniLab-026/090 Glove Box Thin Film Experiment Device(45)

  In the film formation processes of OLED (Organic EL), OPV (Organic Photovoltaic), OTFT (Organic Thin Film Transistor), and graphene/2D materials (two-dimensional layered inorganic nanomaterials such as transition metal dichalcogenides), it is necessary to handle samples in an inert gas atmosphere isolated from oxygen and moisture. The MiniLab-026/00-GB achieves a "moisture and oxygen-free" experimental environment for organic film applications in a compact, space-saving setup by housing the PCD/CVD chamber within the GB. 【Features】 ◉ A series of processes such as CVD/PVD film formation, spin coating application, and hot plate baking can be performed seamlessly within the GB without exposing them to the outside air. ◉ Space-saving: The chamber does not protrude from the back, so it does not take up space. 【MiniLab Models】 ◉ MiniLab-026 (26ℓ volume): Metal/insulator/organic material deposition, sputtering, RF/DC etching, annealing ◉ MiniLab-090 (90ℓ volume): Metal/insulator/organic material deposition, sputtering, RF/DC etching, annealing

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  □■□Thin Film Experiment Device (Compact Type)□■□(21)

  We offer vacuum thin film experimental devices that are specialized for research and development purposes, featuring "space-saving," "high functionality," and "low cost." ◉ nanoPVD-S10A Magnetron Sputtering Device ◉ nanoPVD-T15A Organic and Metal Film Deposition Device ◉ nanoPVD-ST15A Combined Deposition and Sputtering Device ◉ nanoCVD-8G/8N Graphene/CNT Synthesis Device ◉ nanoETCH Soft Etching Device ◉ Mini-BENCH Ultra-High Temperature Compact Desktop Experimental Furnace ◉ Mini-BENCH-prism Ultra-High Temperature Compact Experimental Furnace All of these are compact devices that do not compromise on performance and are high-performance devices. We plan to expand our lineup of new devices to continue contributing to the research and development field.

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  ◉ nanoPVD-S10A Magnetron Sputtering Device(39)

  nanoPVD-S10A Magnetron Sputtering System RF and DC compatible, achieving a vacuum level of 5x10-5 Pascal, with a Φ2 inch cathode and a maximum of 3 units. Despite its high performance and multifunctionality, it fits into limited laboratory space with a small footprint and easy operation via a 7-inch front touch panel. Equipped with a USB port and standard PC data logging function (up to 1000 layers and 50 film recipe storage).

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  ◆nanoPVD-T15A◆ High-performance organic and metal film deposition device(45)

  Ideal for organic thin film deposition applications such as OLED, OPV, and OTFT. Utilizes low-temperature organic deposition sources with excellent temperature responsiveness/stability and high-temperature deposition sources for metal films. Despite its compact size, it achieves performance similar to standalone large machines without sacrificing basic performance, film quality, uniformity, or operability. Intuitive and easy-to-use HMI. Connects to a Windows PC via USB cable for log saving and automatic film deposition recipe creation and storage. ◉ Dimensions: 804(W) x 530(D) x 600(H) mm ◉ Weight: 40–70 kg (depending on equipment configuration) ◉ Excellent basic performance ・Achieved vacuum level of 5x10-5 Pascal ・Turbo molecular pump ・Φ2" or Φ4" substrates ◉ Deposition sources ・Metal deposition source x up to 2 units ・Organic deposition source x up to 4 units (up to 2 units if mixed with resistance heating TE) ◉ 7" touch panel ◉ Continuous film deposition ・Automatic control of deposition programs ・30 types of registered recipes ・High-precision wide-range vacuum gauge ◉ Abundant options ・Substrate rotation ・Vertical lift with 300 mm stroke ・Substrate and source shutters ・Dry pump ・Connects to Windows PC via USB for log saving and management

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  ◆ANNEAL◆ Wafer Annealing Equipment(45)

  High-temperature processing up to 1000°C is possible with the heating stage installed in a high vacuum water-cooled SUS chamber. The mass flow controller can be expanded to a maximum of three systems, allowing for firing operations at precisely adjusted process gas pressures (with the APC automatic process control system option). Additionally, there are many options available, including a front viewport, dry scroll pump, special substrate holder, and additional thermocouples. The heater wire has three variations depending on the process gas atmosphere and treatment temperature: - Halogen lamp: Max 500°C - C/C composite: Max 1000°C (in vacuum, inert gas only) - SiC coating: Max 1000°C (in vacuum, inert gas, O2) ◉ Substrate size: Φ2 to 4 inches ◉ SUS304 water-cooled chamber ◉ Achievable pressure: 5x10^-5 Pascal ◉ Up to 3 mass flow controllers ◉ 7" HMI touch panel ◉ High-precision wide-range vacuum gauge ◉ USB port with PC data logging function ◉ Turbo molecular and rotary pump (*can be changed to dry pump) ◉ K-type thermocouple included

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  ◉ nanoCVD-8G/8N Graphene/CNT Synthesis Device(39)

  ◆nanoCVD-8G (for Graphene) ◆nanoCVD-8N (for Carbon Nanotubes) ◉ Enables easy synthesis experiments of Graphene and CNT (SWNT) in a short time without using large manufacturing equipment ◉ Only 30 minutes per batch! ◉ High-efficiency and high-precision process control using a cold wall type ◉ Rapid heating: RT to 1100℃ in about 3 minutes ◉ High-performance machine with high-precision temperature and flow control, excellent reproducibility

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  ◉ Nanofurnace "BWS-NANO" Thermal CVD Device(39)

  Multi-purpose, high-precision process control [Hot-wall thermal CVD system] ◉ Maximum operating temperature 1100℃ ◉ Graphene, carbon nanotubes ◉ ZnO nanowires ◉ Insulating films such as SiO2 Additionally, it can be utilized for a wide range of applications as a hot-wall thermal CVD system.

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  ◇◆Film-Forming Component◆◇(42)

  ◉ Magnetron Sputter Cathode - Available in Φ2 inch, Φ3 inch, and Φ4 inch sizes - Adopts a clamp ring type, no bonding required - Excellent maintenance, easy target replacement - Rich options including shutters, chimney ports, gas injection, high-strength magnets for magnetic materials, etc. - Compatible with various flange sizes ◉ OLED Organic Vapor Deposition & High-Temperature Metal Evaporation Source Max 1500℃ - Maximum specification temperature: 800℃ or 1500℃ - Crucible volume: 1cc, 10cc - Crucible materials: Alumina, PBN, Quartz, Graphite - Shutter (pneumatic control, motor control) - Thermocouple: K or C - Water-cooled jacket option

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  Ultra-High Temperature Small Experimental Furnace Series(38)

  We offer the best solutions from a diverse lineup for various ultra-high temperature sintering applications, including the Mini-BENCH ultra-high temperature small tabletop experimental furnace (Max 2200℃), MiniLab-WCF ultra-high temperature wafer annealing furnace (Max 2000℃), and TCF-C500 ultra-high temperature carbon experimental furnace (Max 2900℃). We also accommodate custom specifications, so please feel free to consult with us.

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  ◉ Mini-BENCH Ultra High Temperature Small Tabletop Experimental Furnace Max 2200℃(38)

  Tabletop-sized carbon experimental furnace - space-saving, maximum operating temperature 2200°C (short-term) 2000°C (continuous). We also manufacture metal furnaces for reducing atmospheres. ◉ Tabletop size, space-saving: 328 x 220 x 250mm ◉ For sample sintering in crucibles (crucible Φ50 x 100), or flat heaters for sintering Φ1" and Φ2" wafers ◉ High specifications & high cost performance ◉ Easy maintenance: parts replacement is simple ◉ Simple structure, excellent maintainability

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  ◉ TCF-C500 Ultra High Temperature Small Experimental Furnace Max 2900℃(45)

  Max 2900℃ (Carbon furnace), Max 2400℃ (Metal furnace) - Effective heating area: 70 x 70 x 100 mm Supports various applications in new material development and advanced fundamental technology development sectors such as semiconductors, electronic components, fuel cells, and solar cells. A compact R&D ultra-high-temperature experimental furnace capable of heating small samples up to 2900℃ for experimental purposes. It can conduct various firing experiments such as ultra-high-temperature heating experiments and new material development in the laboratory. ◆ Main Features ◆ - Space-saving - Includes rotary pump and compressor - Interlock: water cut-off alarm, overheating, gas pressure drop ◆ Basic Specifications ◆ - Power supply specifications: AC200V 75A NFB 50/60HZ (C-500) - Max 2900℃ (Carbon furnace), 2400℃ (Metal furnace) - Programmable temperature controller, C thermocouple ◆ Options ◆ - Recorder - Turbo molecular pump - Crucible ◆ Main Applications ◆ - New material development - Fuel cells - Others

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  ● MiniLab-WCF Ultra-High Temperature Wafer Annealing Furnace 2200℃(32)

  A dedicated R&D ultra-high temperature experimental furnace for "wafer baking" that emphasizes safety and operability. ◆ Main Features ◆ - Can be easily operated by anyone, regardless of skill level. - Automatic sequence operation: After placing the sample, complex operations are unnecessary; vacuum, venting, and gas introduction are executed with just button presses. - Access to the internal sample chamber through the upper door. - Effective heating range: φ6-φ8 inch (other sizes available). - High vacuum atmosphere compatible (with turbo addition: 1x10-5 Torr). - Status of 8 interlock systems can be confirmed via front LED lamps. ◆ Basic Specifications ◆ - Heating element: CC composite. - Insulation material: Graphite, Tungsten/Molybdenum. - Power specifications: AC200V 70A 14KW (*for 8 inch 2 zones). - Max 2000℃. - Operating atmosphere: Vacuum/Inert gas, Vacuum/Inert gas. - Programmable temperature controller, C thermocouple. ◆ Options ◆ - 2-zone control (*for 6, 8 inch). - Recorder. - Turbo molecular pump. - Wafer holder. ◆ Main Applications ◆ - Electronic devices such as SiC, GaN. - Applications in the development of other advanced materials.

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  ◆◇◆ Small Vertical Experimental Furnace for R&D TVF-110 ◆◇◆(39)

  Low-cost minimum necessary configuration (manual control) applicable as a tubular furnace, diffusion furnace, and heating reactor for thermal CVD. Vertical experimental furnace with manual lift for small substrates ranging from small samples to 3-inch wafers. Ideal low-cost vertical furnace for basic experiments in university and corporate research laboratories. **Main Specifications:** - Maximum furnace temperature: 1200°C, maximum sample temperature: 950°C - Small sample size: accommodates sizes from a few millimeters to 3-inch wafers - Number of substrates: approximately 1 to 3 - Quartz susceptor with manual lift: includes stop position scale and clamp - Furnace core tube: Φ100 x Φ95 x 470L mm - Lifting: manual rotating handle - Temperature control: PID programmable temperature controller - Thermocouples: 2 pairs of K-type thermocouples x1 (for control and over-temperature), K-type bare wire (for furnace core temperature measurement)

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  □■□ Substrate Heating Heater □■□(40)

  The substrate heating heater allows for the selection of front plate materials such as "aluminum nitride," "boron nitride," "Inconel," and "quartz," and offers a wide variety of heater elements including NiCr, Kanthal, graphite, CC composite, and various coated products. We propose a substrate heating unit that can be freely customized in terms of housing, electrode structure, and cooling structure to match the process atmosphere. This substrate heating heater unit excels in ultra-high temperature firing, heating efficiency, uniformity, and temperature reproducibility. It is compatible with all types of equipment configurations, including semiconductor manufacturing equipment, CVD, PVD (evaporation, sputtering, PLD, ALD), and high-temperature annealing devices.

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  ◉ BH Series substrate heating heater Max 1600℃(45)

  We have achieved short delivery times and low prices by standardizing three sizes (Φ1, 2, 4 inches) and four types of heater wire materials (NiCr, Kanthal, Graphite, SiC) and maintaining a stock of parts. This is a limited quantity product intended for university laboratories and research institutions. 【Supported substrate sizes】 ◉ Φ1 inch ◉ Φ2 inch ◉ Φ4 inch 【Heater wire materials】 ◉ Max 1000℃: NiCr, Kanthal wire (in vacuum, Ar, N2, He, O2, H2) ◉ Max 1600℃: Graphite wire (in vacuum, Ar, N2) ◉ Max 1650℃: Solid SiC wire (in vacuum, Ar, N2, He, H2, O2) ■ Three sizes and four types of heater wire: NiCr, Kanthal, Graphite, SiC wire ■ Standard accessories: M6 stud bolts or mounting posts 【Options】 ● Non-standard wire materials are also available (W, Nb, Mo, Pt/Re, WRe) ● Mounting brackets ● Tapped holes for holder installation

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  ◉ SH series substrate heating heater Max 1100℃(39)

  ◉ Compatible sizes: φ1inch to φ6inch ◉ Usage atmosphere: - Vacuum, inert gas (SH-BN) - Vacuum, O2, atmosphere, inert/active gas (SH-IN) ◉ Maximum operating temperature: - Max 1100℃ (SH-BN *O2 not allowed) - Max 850℃ (SH-IN)

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  ◉ Hot stage "Substrate heating mechanism" Max 1800℃(39)

  ◉ Substrate up and down mechanism, rotation, RF/DC bias, tilt ◉ Compatible sizes: φ2inch to φ4inch ◉ Operating atmosphere: O2, N2, Ar, Vac, etc. ◉ Maximum operating temperature: - Max 1800℃ (Gr, CCC, CCC/PG) - Max 1600℃ (Graphite + SiC coating, PBN coating) - Max 850℃ (NiCr) - Max 1000℃ (Kanthal)

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  ◆HTE Heater◆ High Vacuum Crucible Heating Heater Max 1500℃(39)

  High-temperature crucible heating heater for vacuum use. A versatile heater unit that can be used as an organic deposition source at 800°C and a metal deposition source at 1500°C. 【Main Specifications】 ■ Maximum control temperature: 800°C or 1500°C ■ Operating environment: In vacuum or inert gas (*O2 up to 800°C) ■ Heater: Tungsten filament ■ Crucible volume: 1cc (maximum fill volume 1.5cc) ■ Crucible material: Alumina (standard) ■ Case material: SUS304 or molybdenum ■ Thermocouple: Type K or Type C 【Options】 ⚫︎ Crucible material: PBN, graphite, quartz ⚫︎ Heater: NiCr wire, Kanthal wire ⚫︎ Crucible volume: 10cc (maximum fill volume 15cc) ⚫︎ Shutter: Pneumatic or motor-driven ⚫︎ Water-cooled jacket ⚫︎ Controller (heater and shutter control box)

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  Temperature Sensor(7)

  We handle industrial thermocouples, temperature measuring resistors, and various other temperature sensors.

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  Infrared thermometer measuring device(6)

  Various fixed installation infrared radiation temperature sensors ◆ Compact, high-precision non-contact infrared sensor ◆ USB-connected high-precision infrared temperature sensor (for 2.2um short wavelength) ◆ Smartphone-configurable (NFC) infrared temperature sensor ◆ Intrinsically safe explosion-proof infrared radiation temperature sensor

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  ◉ Small, high-precision infrared radiation temperature sensor(6)

  This is a compact OEM specification non-contact infrared temperature sensor, ideal for integration into various devices. ◉ Emissivity fixed at 0.95 ◉ Response time 240 msec ◉ Repeatability ±0.5% or ±0.5℃ ◉ Accuracy ±0.1% or ±0.1℃ ◉ Power supply 24VDC ◉ Output 4-20 mADC

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  ◉ USB connection type, variable emissivity high-temperature infrared radiation temperature sensor(6)

  Wide range -40 to 2000℃. This is a high-precision non-contact infrared temperature sensor with variable emissivity, suitable for general use, glass, metal/high-temperature applications, and a wide range of other uses. ◉ Emissivity setting range 0.1 to 1.0 ◉ Response speed 240 msec ◉ Reproducibility ±0.5% or ±0.5℃ ◉ Accuracy ±0.1% or ±0.1℃ ◉ Power supply 24VDC ◉ Output 4 to 20 mADC

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  ◉ Intrinsically Safe Explosion-Proof Infrared Radiation Temperature Sensor(6)

  TIIS (Industrial Safety Technology Association) certification obtained. Usable in hazardous locations (Zone 0, 1, & 2). Can be used for temperature measurement and control in hazardous material management areas such as petrochemical plants and pharmaceutical factories, as well as in explosive gas atmospheres. ● Usable in hazardous locations Zone 0, 1, and 2 (special hazardous locations, Class 1 hazardous locations, and Class 2 hazardous locations) ● Measurement temperature range: -20℃ to +1000℃ ● Maximum and minimum adjustable span: Max 1000℃, Min 100℃ (configurable within the -20 to 1000℃ range) ● 2-wire, 4-20mA output ● Includes intrinsic safety explosion-proof isolation barrier ● Comes with USB-connected configuration setter "LCT Setter": Allows scaling, span adjustment, emissivity settings, etc., using dedicated software on a Windows PC ● Options: Mounting brackets, air purge kit, extension cables (10m, 25m) ● Designed for harsh environments, featuring a 316 stainless steel housing ● Protection rating IP65

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  ◉ Smartphone-configured infrared radiation temperature sensor(6)

  Temperature range, emissivity, alarm, and other parameters can be set using a smartphone or tablet without the need for a display instrument or power supply for the instrument. ● Free dedicated app available for download from Google Play (Android 4.1 to 5.1) ● Uses Android NFC communication; simply touch the sensor part for reading and writing. ● Ultra-compact sensor (Φ31mm x t29mm) allows temperature measurement in tight spaces. ● Fast response time of 125 msec, high accuracy of ±1.5% ● Voltage output (0-5V or 0-10V), or K thermocouple output 【Other Specifications】 ◉ Field of view: 15:1 ◉ Temperature range: 0℃ to 1000℃ ◉ Measurement wavelength range: 8 to 14μm ◉ Emissivity: 0.2 to 1.0 ◉ Power supply: 24VDC (minimum 6V/10V to maximum 28VDC) ◉ Cable: 1m included (extension up to 30m possible) 【Options】 ◉ Body mounting bracket ◉ Extension cable ◉ Air purge kit

Product/Service List (55)