MiniLab Series Flexible Thin Film Experiment Device
Due to its modular embedded design, it is possible to flexibly assemble dedicated equipment according to the required film formation method. A compact thin-film experimental device that can accommodate various research applications.
**Flexible System** The MiniLab thin film experimental device series allows for easy construction of a compact device configuration without waste, even as a customized product, by incorporating suitable components (such as deposition sources and stages) and control modules according to the required deposition methods and materials from a wide range of options. By configuring the device with a modular control unit in a Plug&Play manner, the application range expands, enabling various thin film process experiments. The MiniLab series is a high cost-performance system that caters to a wide range of applications from research and development to small-scale production. **Small Footprint & Space Saving** - Single Rack Type (MiniLab-026): 590(W) x 590(D)mm - Dual Rack Type (MiniLab-060): 1200(W) x 590(D)mm - Triple Rack Type (MiniLab-125): 1770(W) x 755(D)mm **Excellent Operability & Intuitive Operation Screen** Windows PC or 7” touch panel. Easy operation that does not require advanced skills, while ensuring maximum safety.
basic information
【MiniLab Flexible Thin Film Experimental Device Configuration Modules】 ◉ Manufacturing Range Resistance Heating Deposition (TE), Organic Film Deposition (LTE), Electron Beam Deposition (EB), RF/DC Sputtering (SP), T-CVD/PE-CVD, Plasma Etching (RIE) ◉ Chambers ・026 (26 Liters) - TE/LTE/SP/CVD/Etch/*Globe Box option: Max Φ6 inch ・060 (60 Liters) - TE/LTE/EB/SP/Etch/: Max Φ8 inch ・080 (80 Liters) - TE/LTE/EB/SP/Etch/: Max Φ10 inch ・090 (90 Liters) *Globe Box option - TE/LTE/EB/SP/Etch/: Max Φ10 inch ・125 (125 Liters) - TE/LTE/EB/SP/Etch/CVD: Max Φ12 inch * For other specifications, please refer to our website.
Price information
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Applications/Examples of results
Main uses: - Development of new materials - Advanced technology development - Small-scale prototype production and so on.
Detailed information
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MiniLab-026-TE/LTE/SP The smallest model in the MiniLab series, a standalone thin film experimental device with a 19-inch single rack frame. It has a compact size requiring a minimum installation space of 600mm in width and 600mm in depth, allowing for TE (resistive heating evaporation), LTE (organic thin film evaporation), and SP (sputtering) experiments. Despite its small size, it features PID automatic loop film deposition control (manual operation is also possible) and simultaneous deposition capabilities.
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MiniLab-026-GB (Glove Box Storage Type) A glove box model with the MiniLab-026 chamber installed in the workbench and the control unit stored underneath the bench.
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MiniLab-026 Etch/Anneal Station A device equipped with an RF dry etching stage and a substrate heating stage in the MiniLab-026 chamber. It comes in two models: a standalone version housed in a MiniLab series 19-inch rack frame and a glovebox version called MiniLab-026-GB. This product is a collaborative development with the University of Manchester's graphene group. It contributes to TMDC and 2D development through a unique RIE system with low damage and excellent control precision at under 30W.
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MiniLab-060-TE/LTE/EB/Sputtering Device The "MiniLab-060" series is an R&D device that can be configured for a wide range of purposes, including TE (resistive heating evaporation), LTE (low-temperature organic film deposition), EB evaporation, and RF/DC magnetron sputtering, by modularly incorporating a rich variety of components. There are also many options available, such as vertical lift, substrate rotation, heating and cooling stages, and load locks. (The photo shows the EB model equipped with a 6 pockets evaporation source.)
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The MiniLab-060 PECVD device is a semi-automatic plasma CVD machine equipped with up to four gas lines, RF/DC power units, and a substrate heating and rotating stage (max 1200°C). It features a high vacuum specification with a 60L volume chamber, equipped with RP (DP) + TMP, allowing for stable automatic control of vacuum and gas pressure through PLC/MFC. It is capable of conducting film formation experiments for wafer sizes ranging from 1 to 8 inches.
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MiniLab-080-TE/LTE/SP Box-type chamber: A higher model than the MiniLab-060, which can add a load lock mechanism to an 80-liter large chamber with a chamber height of 570mm. The long adjustment range of the T/S distance contributes to improved film uniformity.
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MiniLab-090 (*Glove Box Storage Type) This is a glove box model of the Mini-Lab-080, which features a large 80L chamber (400x400x570) stored within the workbench. It has a front-loading design with sliding doors, a maintenance door accessible from the back of the chamber, and is a space-saving, high-spec model that maximizes the use of the workbench despite its large chamber. It can be used for various purposes such as vacuum deposition, sputtering, and RF etching. It allows for clean thin film experiments without exposing samples to the atmosphere or moisture after processing.
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MiniLab-125 All options of the MiniLab series can be equipped in a large high-capacity chamber (500x500x600mm). It is the top flagship model of the MiniLab series, covering applications from research and development to small-scale production. It offers a wide range of options such as a load lock system, automatic mask changer, and planetary dome.
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◆HTE Heater◆ High Vacuum Crucible Heating Heater Max 1500℃
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★★Thermosera Japan_Thin Film Experimental Equipment_"PRODUCTS GUIDE 2022"★★
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★☆★☆ MiniLab Series Flexible Thin Film Experimental Device ★☆★☆
The MiniLab thin film experimental device allows for the construction of a compact, semi-customized system that eliminates waste by incorporating the optimal components and control modules according to the required film formation methods and materials from a wide range of options. By equipping a modular control unit with a Plug & Play feel, the application range expands, enabling various thin film process experiments. 【MiniLab Thin Film Experimental Device Configuration Modules】 ◎ Manufacturing Range Resistance heating deposition (TE), organic deposition (LTE), electron beam deposition (EB), sputtering (SP), CVD, dry etching 【Small Footprint & Space Saving】 - Single rack type (026): 590(W) x 590(D)mm - Dual rack type (060): 1200(W) x 590(D)mm - Triple rack type (125): 1770(W) x 755(D)mm 【Excellent Operability & Intuitive Operation Screen】 Windows PC or 7” touch panel. Easy operation that does not require advanced skills, with maximum consideration for safety. All operations except for internal component adjustments and material exchanges in the chamber are performed via the PC/HMI screen.
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Wafer Annealing Equipment [ANNEAL] Max 1000℃ APC Automatic Pressure Control MFC x3 System Compatible with Φ4 to 6 inch Substrates
Max 1000℃, MFC up to 3 systems, APC pressure control, compatible with substrates from 4" to a maximum of 6", high vacuum annealing device (<5 × 10-7 mbar) [ANNEAL] is a research and development annealing device capable of high-temperature heat treatment of substrates such as wafers in a stable process atmosphere. It allows high-temperature processing up to 1000℃ using a heating stage installed in a high vacuum water-cooled SUS chamber. A heat shield is installed inside the chamber to ensure safety through interlock. The mass flow controller can be expanded to a maximum of 3 systems, enabling firing operations with precisely adjusted process gas pressure (APC automatic process control system option). Additionally, there are many options available, including a front view port, dry scroll pump, special substrate holder, and additional thermocouples. The heating stage inside the chamber has three variations depending on the process gas atmosphere and treatment temperature: - Halogen lamp heater: Max 500℃ - C/C composite heater: Max 1000℃ (in vacuum, inert gas only) - SiC coating heater: Max 1000℃ (vacuum, inert gas, O2)
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Hot Stage [Substrate Heating Mechanism] Ultra-High Temperature Substrate Heating Stage Max 1800℃ _ Φ2 to Φ6 inch
High-temperature substrate heating mechanism for vacuum thin film processes, used for the development of semiconductors, electronic devices, etc. It can be utilized for various film deposition experiments on silicon substrates, sapphire substrates, compound substrates, and others. Selection of elements and materials according to ultra-high temperature substrate heating conditions (Max 1800°C) for vacuum equipment such as CVD and sputtering is possible. ◉ Compatible with ultra-high vacuum, inert gas, O2, and various process gas atmospheres. ◉ Substrate up/down/rotation mechanism and RF/DC bias application possible. ◉ Selection of elements according to the atmosphere: NiCr, Inconel, Tungsten, Graphite, CC composite, Graphite (SiC coating, PBN coating) CC composite (PG coating) ◉ Various vacuum flange connections: ICF, VF ◉ Thermocouple included ◉ Other options: Motor controller, temperature control unit, transbox.