Sputtering Equipment Multifunctional Sputter Device MiniLab-S060A
Compact multi-film device that incorporates sputtering, deposition, EB, and annealing thin film modules in a 60L volume chamber, suitable for various applications.
4 units of Φ2 inch cathodes installed Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen with the plasma relay switch 3 systems of MFC (Ar, O2, N2) for reactive sputtering Plasma etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coat) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● It is also possible to configure a mixed specification for resistance heating deposition, organic material deposition, EB deposition, etc.
basic information
【Main Specifications】 - SUS304 60ℓ volume 400x400x400mm front-loading chamber * Large chamber option MiniLab-070 (450 x 450 x 450) available - Maximum substrate size: Φ8 inch - Pump: Turbo molecular pump, rotary pump (dry pump available) - Vacuum exhaust: Automatic control of vacuum/vent - Resistance heating deposition: Up to 4 sources (Model TE1 to TE4 deposition sources) - Organic deposition: Up to 4 sources (Model LTEC-1cc/5cc) - Electron beam deposition source: 7cc crucible x 6 (or 4cc crucible x 8) - Φ2 to 4 inch magnetron sputtering cathode x up to 4 sources - Process control: Manual or automatic continuous multilayer film, simultaneous film formation, APC automatic control - Film thickness monitor: Quartz crystal sensor head - Film thickness control: Inficon SQM-160 (or SQC-310) 2ch/4ch thin film controller - Other options: Substrate rotation/lifting, substrate heating (Max 500℃ or 800℃), plasma etching stage, dry pump, load lock mechanism
Price range
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Model number/Brand name
MiniLab-S060A
Applications/Examples of results
Manufacturing factories for electronic devices, solar cells, displays, universities and research institutions, pharmaceutical and chemical factories, food factories, and many others.
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☆★☆★【nanoCVD-8G】Graphene Synthesis Device ☆★☆★
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4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
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