Compact design with a space-saving layout that can be installed anywhere. Despite its compact body, it generates high-resolution data through advanced calculation software. * X-ray tube voltage: 20-90kV, or 40-maximum 130kV * Focus diameter: 7μm (5μm@4W) * Detector pixel: 89μm, approximately 3.2 million pixels! * Sample size: Φ120mm ◉ Vcap (Control Software): A custom-made imaging stage tailored to the subject and purpose. A series of tasks from shooting to image output can be performed with just a click. High-speed continuous shooting in as fast as 20 seconds, with processing from shooting start to image reconstruction taking about 30 seconds. ◉ VCT (Reconstruction Software): Customizable automatic measurement and analysis software specialized for the specified subject. High-speed reconstruction of shooting data with 992 x 992 pixel images and 600 projections in just 3.8 seconds! ◉ MolcerPlus (3D Display Analysis): Custom software that enables measurement conditions that were difficult with conventional software. Software for displaying, processing, and measuring the imaged object. ● High safety, ● Compatible with a wide variety of samples, ● Intuitive HMI, easy operation.

4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.

Multifunctional Multi-Sputtering Device (Compatible with Φ8inch Substrates) - Simultaneous deposition of three components + one component Pulse DC sputtering - Flexible arrangement of RF500W and DC850W power supplies to three cathodes (Source 1, 2, 3) - Equipped with a 5KW Pulse DC power supply → used with dedicated cathode (4) - Substrate heating stage Max 800℃ (SiC coated heater can achieve Max 1000℃) - MFC x 3 systems (Ar, O2, N2) for reactive sputtering - Main chamber RIE etching stage RF300W - LL chamber <30W low power controlled soft etching - Unique "Soft-Etching" technology reduces substrate damage through substrate bias - Touch panel or Windows PC operation: All operations can be performed on the touch panel/PC without dispersing control. - Equipment installation dimensions: 1,960(W) x 1,100(D) x 1,700(H) mm - Multi-chamber type can also be manufactured. ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.

Plasma CVD equipment compatible with wafer sizes Φ3 inch and Φ4 inch. Rapid synthesis of clean, high-quality graphene while suppressing impurities. Usable with both thermal CVD and low to high temperature plasma CVD methods. The configuration can be customized according to requirements, including mass flow gas supply systems and substrate heating heaters. 【Example of equipment configuration】 - Substrate: Cu, Ni, etc. (film, foil) - Raw materials: CH4, C2H4, solids (PMMA), etc. - Process gases: H2, Ar, N2, etc. - Substrate size: Φ4 inch - 150W, 13.56MHz RF power supply - Substrate heating from 500℃ to Max 1100℃ - High precision process gas pressure APC control - Mass flow controller with a maximum of 4 channels

The ML-080, with a volume of 80 liters and dimensions of 400(W)x400(D)x570(H)mm, is composed of a D-type box chamber. It has the same configuration as the 070 model but features a taller chamber, resulting in a longer TS distance adjustment range and improved film uniformity during deposition on large-diameter substrates, making it an optimal model for vacuum deposition. It is a higher-end model than the ML-070, which can also accommodate a load lock mechanism. Like the 070, it is compact yet supports a wide range of applications including resistance heating deposition (for metals, insulators, and organic materials), electron beam deposition, RF/DC/PulseDC compatible magnetron sputtering, RIE plasma etching, and annealing. - Maximum substrate size: Φ11 inch - Resistance heating deposition source x up to 4 units - Organic deposition source x up to 4 units - Magnetron sputtering cathode x 4 units - Electron beam deposition - Substrate heating stage (standard 500℃, Max 1000℃) - *Plasma etching / <30W soft etching *Plasma etching can be installed in both the main chamber and the load lock chamber.