◉ High-efficiency and high-precision process control using cold wall method ◉ Rapid heating: 1100℃ in approximately 3 minutes ◉ High-precision temperature control: ±1℃ ◉ High-precision APC automatic pressure control system: 3 gas lines (Ar, H2, CH4) ◉ Standard recipe for graphene production included ◉ Compact size: 405(W) x 415(D) x 280(H)mm ◆Features◆ - Easy operation! Operation and recipe management via 5-inch touch panel - Up to 30 recipes and 30-step program creation possible - PC software included with USB cable connection, offline recipe creation on PC → upload/download to/from the device, CSV data output - Maximum sample size: 40 x 40mm: copper (nickel) foil, SiO2/Si, Al2O3/Si substrates, etc. ◆Model: nanoCVD-8G◆ - Standard program for graphene included - High vacuum process, high-precision process pressure control - Rotary pump included as standard - 3 gas supply lines (Ar, H2, CH4) - Sample heating stage (high-purity graphite) Max 1100℃ - K-type thermocouple

Compact measurement, robust body, high accuracy ±1%, 240msec fast response. It can be applied for industrial machine control, temperature monitoring in production sites, and various other purposes. 【Features】 ◎ Integrated amplifier and sensor ◎ 4-20mA output (standard), 0-50mV, thermocouple K, J, T output (optional) ◎ Accuracy: ±1% or ±1℃ (whichever is larger) ◎ Repeatability: ±0.5% or ±0.5℃ (whichever is larger) ◎ Response speed: 240msec ◎ Protection rating: IP65 【Other Specifications】 ◉ Field of view: 2:1 or 15:1 ◉ Temperature range: ・LT (-20℃ to 100℃) ・MT (0 to 250℃) ・HT (0 to 500℃) ◉ Measurement wavelength range: 8 to 14μm ◉ Emissivity: 0.95 (fixed) ◉ Power supply: 24VDC ◉ Body dimensions: Φ18mm (diameter) x 103mm (length) ◉ Weight: approximately 95g ◉ Cable 1m (standard included): maximum extension 3m (optional)

【Overview】 Connect to a Windows PC using the standard accessory "CalexConfig" and the included USB cable (1.8m), allowing you to set measurement parameters for the sensor, analyze measurement results, and output them in CSV format. 1) 4-20mA output 2) USB output (operates on USB bus power) 3) Simultaneous use of 4-20mA/USB output These three methods of use are possible. 【Features】 ◎ Simultaneous use of USB data logging and 4-20mA analog output ◎ Excellent basic performance: accuracy ±1%, reproducibility ±0.5%, 200msec fast response ◉ PUA2: Covers short wavelengths from 2.0 to 2.4μm, capable of measuring metal surfaces ◉ PUA5: Optimal for measuring glass surfaces, wavelength 5μm ◉ PUA8: General-purpose, suitable for a wide range of applications, wavelength 8-14μm 【Other Specifications】 ◉ Field of view: 15:1, 25:1, 30:1, or 75:1 ◉ Emissivity setting range: 0.1 to 1.0 ◉ Power supply: 24VDC ◉ Body dimensions: Φ27.6mm (diameter) x 61mm (length) ◉ Weight: approximately 155g ◉ Analog signal cable 1m (standard included, extendable up to 30m) *USB cable 1.8m (USB cable cannot be extended)

ExTemp is an intrinsically safe explosion-proof radiation temperature sensor that can be used in hazardous material handling equipment and factories such as petrochemical plants, pharmaceutical factories, and chemical plants. (TIIS Type Certification Number: 21097) TIIS (Technical Institution of Industrial Safety) certified for use in hazardous locations (Zone 0, 1, & 2) ● Usable in hazardous locations Zone 0, 1, and 2 (special hazardous locations, Class 1 hazardous locations, and Class 2 hazardous locations) ● Measurement temperature range: -20℃ to +1000℃ ● Maximum and minimum adjustable span: Max 1000℃, Min 100℃ (configurable within the -20 to 1000℃ range) ● 2-wire, 4-20mA output ● Includes intrinsically safe explosion-proof isolation barrier ● Comes with USB-connected configuration setter "LCT Setter": Allows scaling, span adjustment, emissivity settings, etc., using dedicated software on a Windows PC ● Options: Mounting brackets, air purge kit, extension cables (10m, 25m) ● Designed for harsh environments, featuring a 316 stainless steel housing ● Protection rating IP65

**Overview** Connect to a Windows PC using the standard accessory "CalexConfig" and a USB cable (1.8m included) to set measurement parameters for the sensor, analyze measurement results, and output them in CSV format. 1) 4-20mA output 2) USB output (operates on USB bus power) 3) Simultaneous use of 4-20mA/USB output These three methods of use are possible. **Features** ◎ Simultaneous use of USB data logging and 4-20mA analog output ◎ Excellent basic performance: accuracy ±1%, reproducibility ±0.5%, 200msec fast response ◉ PUA2: Covers short wavelengths from 2.0 to 2.4μm, capable of measuring metal surfaces ◉ PUA5: Optimal for measuring glass surfaces, wavelength 5μm ◉ PUA8: General-purpose, suitable for a wide range of applications, wavelength 8-14μm **Other Specifications** ◉ Field of view: 15:1, 25:1, 30:1, or 75:1 ◉ Emissivity setting range: 0.1 to 1.0 ◉ Power supply: 24VDC ◉ Body dimensions: Φ27.6mm (diameter) x 61mm (length) ◉ Weight: approximately 155g ◉ Analog signal cable 1m (standard included, extendable up to 30m) *USB cable 1.8m (USB cable cannot be extended)

USB-connected compact infrared temperature sensor, no power supply needed, powered via USB bus from PC, parameter settings and data management with included dedicated software. 【Overview】 Simply install the standard included "CalexConfig" and connect to a Windows PC using a USB cable. You can easily set measurement parameters, conduct measurements, and analyze results with CSV output on your PC in a plug-and-play manner. 【Features】 ◎ USB data logging ◎ Excellent basic performance: accuracy ±1%, reproducibility ±0.5%, 240 msec fast response ◎ Covers measurement wavelength range of 8 to 14 μm ◎ Compact size Φ18mm x 45mm 【Other Specifications】 ◉ Field of view: ・PMU21: 2:1 ・PMU201: 20:1 ◉ Temperature range: -20℃ to 1000℃ ◉ Measurement wavelength range: 8-14 μm ◉ Emissivity: 0.2 to 1.0 ◉ Power supply: not required ◉ Body dimensions: Φ18mm (diameter) x 45mm (length) ◉ Weight: approximately 85g ◉ USB cable length: 1.5m

Temperature range, emissivity, alarm, and other parameters can be set using a smartphone or tablet without the need for a display instrument or power supply for the instrument. ● Settings can be made using a smartphone or tablet. ● A dedicated app can be downloaded for free from Google Play (Android 4.1 to 5.1). ● Using Android's NFC communication, simply touch the sensor part to read and write data. ● Ultra-compact sensor (Φ31mm x t29mm) allows temperature measurement in tight spaces. ● Fast response time of 125 msec, high accuracy of ±1.5%. ● Voltage output (0-5V or 0-10V), or K thermocouple output. 【Other Specifications】 ◉ Field of view: 15:1 ◉ Temperature range: 0℃ to 1000℃ ◉ Measurement wavelength range: 8 to 14μm ◉ Emissivity: 0.2 to 1.0 ◉ Power supply: 24VDC (minimum 6V/10V to maximum 28VDC) ◉ Cable: 1m included (extension up to 30m possible) 【Options】 ◉ Body mounting bracket ◉ Extension cable ◉ Air purge kit

High-performance touch panel converter for easy setup, data logging, and data storage on microSD card. The PM2.2 model can also measure glossy metal surfaces. 【Overview】 With a highly visible high-brightness touch panel display, parameters such as temperature range, emissivity, and sampling rate can be intuitively operated and set. Long-term data storage and management are possible with a microSD card. (*An option for a converter without a display is also available.) The compact sensor head, measuring φ18mm x 45mm, allows for temperature measurement in tight spaces. It employs sensors and cables with excellent noise resistance, making it suitable for integration into moving equipment such as robotic arms. The PM2.2 model uses a short wavelength of 2.2um, supporting high temperatures (Max 2000℃) and measurements of glossy metal material surfaces. 【Features】 ◎ Wide range: -20 to 1000℃ (PM), 100 to 2000℃ (PM2.2) ◎ Excellent basic performance: Accuracy ±1%, reproducibility ±0.5%, 240msec fast response ◎ Measurement wavelength range: 8 to 14μm (PM), 2.0 to 2.2μm (PM2.2) ◎ Compact Φ18mm x 45mm

It can be applied to various vacuum thin film experiments such as PVD (sputtering, evaporation, EB, etc.), CVD, high-temperature vacuum annealing, and high-temperature sample analysis substrate stages. We offer custom-made solutions to meet various specifications. 【Features】 ● Semi-custom product. Designed and manufactured according to your requests. ● Easy replacement of the auxiliary heater wire. ● Easy installation and maintenance (M6 stud bolts, supports). ● Compatible with RF/DC bias and substrate rotation. 【Standard Accessories】 ● Thermocouple: wire type with alumina insulating sleeve. ● Mounting stud bolts. 【Options】 ● RF (150W)/DC (1KW) bias application. ● Non-standard heater wires (Nb, Mo, Pt/Re, WRe, etc.). ● Substrate holding clips. ● Mounting brackets. ● Substrate holders. ● Tapped holes for holder installation. ● Change of top plate material (PBN, quartz, carbon, Inconel, etc.). ● Additional thermocouples for overheating. ● Base flange and vacuum feedthrough.

High-efficiency magnetron sputtering cathode compatible with RF, DC, and pulse DC, capable of depositing metals and insulators without impurities. It also excels in maintainability. 【Features】 - High vacuum compatible - Available in sizes Φ2 inch, Φ3 inch, Φ4 inch - Adopts a clamp ring type, eliminating the need for bonding - Excellent maintainability, allowing for easy target replacement - Rich options including shutters, chimney ports, gas injection, high-strength magnets for magnetic materials, etc. - Compatible with various flange sizes 【Main Specifications】 ■ Compatible with RF, DC, and pulse DC ■ Target thickness: 1/16" to 1/4" ■ N-type coaxial connector ■ Water-cooled: 4ℓ/min, 0.35Mpa Φ6mm tube connection ■ Case material: SUS304 ■ Target clamp material: Al or SUS304 ■ Bellows (*Flexi-head type) material: SUS316 ■ Insulating material: PEEK/PTFE ■ Sealing material: Viton ■ High-strength magnet pack: NiFe

Plasma CVD equipment compatible with wafer sizes Φ3 inch and Φ4 inch. Rapid synthesis of clean, high-quality graphene while suppressing impurities. Usable with both thermal CVD and low to high temperature plasma CVD methods. The configuration can be customized according to requirements, including mass flow gas supply systems and substrate heating heaters. 【Example of equipment configuration】 - Substrate: Cu, Ni, etc. (film, foil) - Raw materials: CH4, C2H4, solids (PMMA), etc. - Process gases: H2, Ar, N2, etc. - Substrate size: Φ4 inch - 150W, 13.56MHz RF power supply - Substrate heating from 500℃ to Max 1100℃ - High precision process gas pressure APC control - Mass flow controller with a maximum of 4 channels

Max 1000℃, MFC up to 3 systems, APC pressure control, compatible with substrates from 4" to a maximum of 6", high vacuum annealing device (<5 × 10-7 mbar) [ANNEAL] is a research and development annealing device capable of high-temperature heat treatment of substrates such as wafers in a stable process atmosphere. It allows high-temperature processing up to 1000℃ using a heating stage installed in a high vacuum water-cooled SUS chamber. A heat shield is installed inside the chamber to ensure safety through interlock. The mass flow controller can be expanded to a maximum of 3 systems, enabling firing operations at precisely adjusted process gas pressures (APC automatic process control system option). Additionally, there are many options available, including a front view port, dry scroll pump, special substrate holder, and additional thermocouples. The heating stage inside the chamber has three variations depending on the process gas atmosphere and treatment temperature: - Halogen lamp heater: Max 500℃ - C/C composite heater: Max 1000℃ (in vacuum, inert gas only) - SiC coating heater: Max 1000℃ (vacuum, inert gas, O2)

ThermoCera Japan has updated the latest catalog for substrate heating heaters, ideal for thin film experiments such as CVD and PVD, with ultra-high temperature substrate heating heaters ranging from 1 inch to 4 inches. ◉ Maximum operating temperature: 850°C (SH-IN), 1100°C (SH-BN) We also accommodate requests for customized products such as substrate holders, vertical lift mechanisms, substrate rotation mechanisms, and RF bias. Additionally, we offer 19-inch rack-mounted heater controllers in addition to traditional stationary models.

ThermoCera Japan has updated the latest catalog for its ultra-high temperature substrate heating heaters, suitable for thin film experiments such as CVD and PVD, ranging from 1 inch to 4 inches. ◉ Maximum operating temperature: 850°C (SH-IN), 1100°C (SH-BN) We also accommodate requests for customized products such as substrate holders, vertical lift mechanisms, substrate rotation mechanisms, and RF bias. Additionally, we offer heater controllers in both traditional standalone models and 19-inch rack mount options.

We have released dedicated remote management software "IntelliLink" for the nanoPVD-S10A magnetron sputtering system, the nanoPVD-T15A metal/organic film deposition system, and the nanoPVD-ST15A composite thin film experimental system. In addition to the control software "IntelliDep," which allows centralized management of equipment operation and film formation control via the included 7" touch panel, the new optional IntelliLink enables remote management from a Windows PC. With IntelliLink, almost all operations, except for the main controls of the equipment (vacuum pumping, vent operation, interlock monitoring), can be performed from the PC. (1) System live monitoring (equipment operation status monitor) - Chamber pressure, MFC flow rate settings - Film thickness display, settings, calibration - Stage rotation, heating, shutter opening and closing operations (2) Error analysis (3) Recipe creation, saving, uploading (4) Data logging, CSV format output → Data sharing with other devices ◉ Connect to the equipment's rear Ethernet port using the included USB cable.

Compact and space-saving! Ideal for organic thin film development, all processes such as deposition, sputtering, and annealing can be seamlessly performed within a glove box. In the development processes of organic EL, organic thin film solar cells, and graphene/2D materials (two-dimensional layered inorganic nanomaterials such as transition metal dichalcogenides), it is necessary to handle samples in an inert gas atmosphere isolated from oxygen and moisture. By housing the PVD chamber within the glove box, a compact and space-saving "oxygen and moisture-free" experimental environment for organic film applications is achieved. 【Features】 ◉ A series of processes such as PVD film deposition, spin coating, and hot plate baking can be performed seamlessly within the glove box without exposing them to the outside air. ◉ Space-saving: The chamber does not protrude from the back, so it does not take up space. 【MiniLab Models】 ◉ MiniLab-026 (26ℓ volume): Metal/insulator/organic material deposition, sputtering, RF/DC etching, annealing ◉ MiniLab-090 (90ℓ volume): Metal/insulator/organic material deposition, sputtering, RF/DC etching, annealing

Equipped with various conditions necessary to create a highly uniform "high-quality" thin film required in research and development settings. The nano series is a high-performance device that condenses functionality into a compact body. It employs a robust and highly airtight stainless steel chamber that ensures a high vacuum environment and sufficient T/S adjustment distance, which are essential elements for high-quality film formation with minimal defects. Additionally, all models share the IntelliDep software, which allows anyone to operate the system regardless of their level of expertise, thanks to its intuitive and easy-to-understand touch panel interface. 【nano Benchtop Compact Thin Film Experimental Equipment】 ◉ nanoPVD-S10A: RF/DC Magnetron Sputtering Device ◉ nanoPVD-T15A: Organic Film and Metal Film Deposition Device ◉ nanoPVD-ST15A: Mixed Deposition and Sputtering Composite Thin Film Experimental Device ◉ ANNEAL: Wafer Annealing Device ◉ nanoCVD: Graphene/CNT Synthesis Device ◉ nanoEM: High Vacuum EM Coater * For other detailed specifications, please contact us.

Multi-purpose, high-precision process control [Hot-wall thermal CVD device] ◉ Graphene, carbon nanotubes ◉ ZnO nanowires ◉ Insulating films such as SiO2 Additionally, it can be utilized for a wide range of applications as a hot-wall thermal CVD device.

Low-cost minimum necessary configuration (manual control) tubular furnace, diffusion furnace, and thermal CVD applicable Vertical experimental furnace with manual lift for small substrates from small samples to 3-inch wafers Ideal low-cost vertical furnace for basic experiments in university and corporate research laboratories 【Applications】 ◉ Thermal processing for semiconductors, solar cells, fuel cells, electronic substrates, etc. ◉ Basic experiments: simple thermal processing experiments using vertical tubular furnaces, oxidation diffusion furnaces, LPCVD, etc. 【Main Specifications】 - Maximum furnace temperature: 1200℃, maximum sample temperature: 950℃ - Small sample size: accommodates sizes from a few millimeters to 3-inch wafers - Number of substrates: approximately 1 to 3 sheets - Quartz susceptor with manual lift: includes stop position scale and clamp - Furnace core tube: Φ100 x Φ95 x 470L mm - Lifting: manual rotating handle - Temperature control: PID programmable temperature controller - Thermocouples: 2 pairs of K-type thermocouples x1 (for control, over-temperature), K-type bare wire (for furnace core temperature measurement)

Endless possibility_thermal engineering There is an endless demand for "heat," which is indispensable in any era, and we aim to contribute, even in a small way, to the research and development needs. We would like to introduce the latest thermal engineering and temperature measurement technologies. Our company sells temperature measurement devices such as radiation temperature sensors, as well as heaters and experimental furnaces that support the semiconductor and electronic device development sector. - Ultra-high temperature substrate heating heaters for CVD and PVD vacuum thin film experiments - Ultra-high temperature small experimental furnaces - Thin film experimental devices for research and development - Compact series thin film experimental devices - Infrared radiation temperature sensors - Various vacuum components

Sputter Cathode and Co-evaporation Source Mixed Thin Film Experimental Device. Metal deposition, organic deposition, and sputter cathode are installed in a compact frame. A resistance heating evaporation source (for metal deposition), an organic evaporation source (for organic materials), and magnetron sputtering (for metals and insulating materials) are installed in the chamber, allowing for various thin film experimental setups within a single chamber. ◉ Three combinations available: 1. Sputter Cathode + Resistance Heating Evaporation Source x2 2. Sputter Cathode + Organic Evaporation Source x2 3. Sputter Cathode + Resistance Heating Source x1 + Organic Evaporation Source x1 (*DC sputtering only) 【Specifications】 ◉ Compatible substrates: up to Φ4 inches ◉ Sputtering: 2" cathode x up to 3 sources ◉ Vacuum deposition: Resistance heating evaporation (up to 2), organic evaporation (up to 4) ◉ 7" touch panel operation with PLC automatic process control ◉ APC automatic pressure control ◉ 1 line of Ar gas (standard) + expandable with N2, O2 ◉ Connects to a Windows PC via USB for recipe creation and storage. Data logging on PC ◉ Various other options available ◉ Easy operation with a 7" touch panel and PLC automatic process control

Vacuum Ultra-High Temperature Cylindrical Heater Unit Maximum Temperature 1800℃ (Graphite, C/C Composite) We will manufacture according to your requested specifications. This is a cylindrical heating unit that can be applied in high vacuum for various purposes. We can custom-make it for heating samples in crucibles within the cylindrical heating range, heating metal, ceramic, and wire-shaped samples, depending on the purpose. ◎ Usable Environment: In vacuum, in inert gas, etc. ◎ Heating Element: Graphite, C/C composite heater, SiC coating, PG coating, tungsten, tantalum, etc. ◎ Manufacturing Range: Heater section (up to approximately Φ150 x 100mm), introduction flange, temperature control unit ◎ Applications: Sample heating in various vacuum device process chambers, discharge plasma generation unit thermal electron gun (Lab6), rapid heating of gas supply system piping (liquid rapid vaporization) We also manufacture custom specifications according to other requests. For details, please contact us.

Dear Customers, We will soon be updating our high-temperature experimental furnace to a model with even higher functionality and superior operability compared to our conventional products. By the end of September this year, we expect to completely renew our product lineup and introduce new equipment information. Based on the minimum configuration for universities and research institutions, "Mini-BENCH," we will enhance the basic functions and add various optional features. *Main Improvements - Design change of the benchtop frame - Clamshell-type chamber (damper or linear drive) - Plug & play style, making it easier to replace, maintain, and expand pumps, gauges, etc. - APC process pressure control (automatic pressure adjustment of PID loop: upstream or downstream control) - Integration of the TE series and MiniLab-CF into "Mini-BENCH-prism" and "MiniLab-WCF" Not only limited to research and development, but we will also comply with strict safety standards for prototyping and small-scale production in factories and development sites. Please wait a little while for the update. In the meantime, we will continue to list our current products, but if you have any requests, we will respond accordingly, so please consult with us first.

Compact, space-saving, and energy-efficient! High-performance ultra-high-temperature experimental furnace for R&D. A compact experimental furnace capable of heating small samples up to 2900°C for R&D purposes. It can conduct various sintering experiments such as ultra-high-temperature heating experiments and new material development in the laboratory. ◆ Main Features ◆ - Space-saving - Includes rotary pump and compressor - Interlock: water cut-off alarm, overheating, gas pressure drop ◆ Basic Specifications ◆ - Power specifications: AC200V 75A NFB 50/60HZ (C-500) - Max 2900°C (carbon furnace), 2400°C (metal furnace) - Programmable temperature controller, C thermocouple ◆ Options ◆ - Recorder - Turbo molecular pump - Crucible ◆ Main Applications ◆ - New material development - Fuel cells - Others

This is an RF/DC magnetron sputtering device for research and development. Despite its high performance and multifunctionality, it fits into the limited space of a laboratory with its compact size and easy operation via a 7-inch front touch panel. ● Achievable pressure: 5x10^-5 Pa (*fastest 30 minutes up to 1x10^-4 Pa!) ● Film uniformity: ±3% ● Various options: up/down rotation, heater, cathode for magnetic materials, and more ● 3-source cathode + 3 MFC systems, with additional RF/DC power supply, allowing for versatile applications such as multilayer films and simultaneous deposition. - Insulating films - Conductive films - Compounds, etc. 【Main Features】 ◉ Compatible substrates: 2" (up to 3 sources) or 1" (1 source) ◉ 2" cathode x up to 3 sources ◉ Easy operation via touch panel with PLC automatic program control ◉ MFC high-precision APC automatic process pressure control ◉ Up to 3 MFC systems ◉ USB port for Windows PC connection, capable of creating and saving recipes for up to 1000 layers and 50 films. Live data logging on PC. ◉ Vacuum system: TMP + RP (*dry pump option) ◉ Substrate rotation, up/down elevation, heating (Max 500℃) ◉ Quartz crystal film thickness monitor/controller

Ideal for organic thin film deposition applications such as OLED, OPV, and OTFT. Utilizes low-temperature organic deposition sources with excellent temperature responsiveness/stability and deposition sources for metal films. Centralized management of various settings with PLC automatic control via simple touch panel operation. An intuitive HMI that allows anyone to operate without complicated procedures. Connects to PC via USB cable, allowing for log and CSV file saving, and creation, registration, and storage of deposition recipes. ◉ Compact size: 804(W) x 530(D) x 600(H)mm ◉ Weight: 40kg to 70kg (depending on equipment configuration) ◉ Excellent basic performance - Achieves vacuum level of 5x10-5 Pascal - Equipped with a high-performance turbo molecular pump - Supports Φ2 inch or Φ4 inch substrates ◉ Deposition sources - Resistance heating deposition source TE x up to 2 units - Organic deposition source LTE x up to 4 units (if mixed with resistance heating TE, up to 2 units) ◉ 7" touch panel ◉ Continuous film formation - Automatic control of film formation programs - Registration of 30 types of recipes - High-precision wide-range vacuum gauge ◉ Abundant options - Substrate rotation - Vertical lift with 300mm stroke - Substrate shutter - Dry pump (RP standard)

Multi-purpose, high-precision process control [Hot-wall thermal CVD device] ◉ Graphene, carbon nanotubes ◉ ZnO nanowires ◉ Insulating films such as SiO2 Additionally, it can be utilized for a wide range of applications as a hot-wall thermal CVD device.

◉ Maximum operating temperature Max 2000℃ ◉ PLC semi-auto control A higher model of the tabletop Mini-BENCH with semi-auto control Automatically controls each process of "vacuum/purge cycle," "gas replacement," and "venting" Maximum operating temperature 2000℃ Semi-auto control ultra-high temperature experimental furnace (carbon furnace, tungsten metal furnace) Compact and space-saving experimental furnace ◉ Effective heating range (crucible dimensions) - Flat heater heating range: Φ2 inch to Φ6 inch - Cylindrical heater heating range: Φ30 to Φ80 x Depth Max 100(H) mm ◉ Up to 3 MFC systems for automatic flow control (or manual adjustment) ◉ APC automatic pressure control ◉ Ensures safety during operation Monitors abnormal cooling water, chamber temperature, and overpressure. Made of SUS, robust water-cooled chamber can be safely used even during continuous operation at maximum temperature. ◉ Compact and space-saving Width 603 x Depth 603 x Height 1,160 mm (*Installed inside rotary pump housing) Ultra-high temperature heating experiments for small samples in the laboratory, as well as various sample heating experiments for new material research and development, can be easily conducted with simple operations. The main unit is compact yet can be used for research and development in various fields.

High-Temperature Annealing Equipment for Max 2000℃ Φ6 to 8 inch Wafers, Capable of Small-Scale Production with Multi-Atmosphere Wafer Annealing System ◾️ Max 2000℃ ◾️ Effective Heating Range: Φ6 to Φ8 inch single wafer type or batch type (multi-layer 5 wafer cassette) ◾️ Heater Control: 1 zone or 2 zones (cascade control) ◾️ Heater Material: ・C/C Composite: Φ6 to Φ8 inch ・PG Coating High Purity Graphite: Φ6 to Φ8 inch ◾️ Operating Atmosphere: ・Vacuum (1x10-2Pa), Inert Gas (Ar, N2) ◾️ PLC Semi-Automatic Operation ・Automatic sequence control for vacuum/purge cycle and venting ・Full automatic operation (optional) ・Touch panel operation allows centralized management without dispersed control. ◾️ Process Pressure Control ・APC Control (MFC flow or automatic opening adjustment valve PID loop control) ・Maximum 3 systems of MFC flow automatic control or manual adjustment with flow meter/needle valve ◾️ PLOT screen graph display, CSV data output