テルモセラ・ジャパン 本社 Official site

Tabletop small-sized experimental furnace - space-saving, with a maximum operating temperature of 2000°C! We also manufacture metal furnaces for reducing atmospheres.

◆Device Configuration◆ We will propose a configuration that meets your budget and objectives. (A) Minimum configuration: Chamber + Temperature control unit (B) Above minimum configuration (A) + Vacuum exhaust system (pump, gauge, valve, vacuum piping) ◆Basic Specifications◆ - Heater: C/C composite, PG coated C/C composite (carbon furnace), tungsten (metal furnace) - Insulation material: Graphite felt (carbon furnace), tungsten/molybdenum (metal furnace), or tungsten/molybdenum multilayer shield - Temperature control: Digital programmable controller, C thermocouple - Achievable vacuum level: 1x10-2 Pascal (*However, in the case of an empty furnace) - Power supply specifications: AC200V 50/60HZ three-phase 6KVA - Cooling water: 3L/min, 0.4Mpa 25-30℃ ◆Control Box Specifications◆ - Programmable temperature controller - DC power supply unit or external transformer box - Current and voltage meters - Heater circuit trip switch - Main power switch ◆Options◆ - Vacuum exhaust system - Custom crucible Others

Maximum operating temperature 2000℃ Semi-automatic control Ultra-high temperature experimental furnace (carbon furnace, tungsten metal furnace) Compact and space-saving experimental furnace

◆Basic Specifications◆ - Heater: C/C composite, PG coated C/C composite (carbon furnace), tungsten (metal furnace) - Insulation material: Graphite felt (carbon furnace), tungsten/molybdenum (metal furnace), or W/Mo multilayer shield - Surface heater heating range: Φ2 inch to Φ6 inch - Cylindrical heater heating range: Φ30 to Φ80 x Depth Max 100(H) mm - 7-inch touch panel operation - Digital vacuum gauge - MFC automatic adjustment for up to 3 systems (or manual flow adjustment with float meter) - Temperature control: Digital programmable controller, C thermocouple - Achievable vacuum level: 1x10-2 Pascal (*only in the case of an empty furnace) - Primary power supply specifications: AC200V 50/60HZ three-phase 50A NFB - Cooling water: 8L/min, 0.4Mpa 25 to 30℃ ◆Options◆ - Vacuum exhaust system: Rotary pump, high vacuum pump, valves

6 to 8 inch ultra-high temperature wafer annealing equipment, a high-performance machine that widely accommodates various purposes from research and development to small-scale production.

A dedicated ultra-high temperature wafer annealing furnace focusing on safety and operability for "wafer baking." ◆ Main Specifications ◆ - Insulation materials: Graphite felt, tungsten, molybdenum, alumina, zirconia, etc. (*Varies depending on furnace design) - Chamber opening and closing: Top loading, linear drive operation (or manual opening and closing with damper) - Achievable vacuum level: 1x10-2 Pascal (in the case of an empty furnace) - Vacuum pump: Dry scroll pump - Vacuum gauge: Wide-range vacuum gauge from atmospheric pressure to 10-9 mbar - Thermocouple: Type C thermocouple (Type K may be used depending on design temperature conditions) - Interlock: Chamber over-temperature, heater over-temperature, cooling water cutoff, chamber opening and closing, vacuum level - Power supply: 200V, 50A (*Varies by specification) 3-phase - Cooling water: 8L/min, 0.4Mpa - Dimensions (body): 1240(W) x 590(D) x 1160(H) mm ◆ Options ◆ - Additional thermocouple for measuring temperature inside the crucible - High vacuum pump (turbo molecular pump) - Front view port - Full auto control - Substrate rotation stage - Communication function (using temperature control function) or SECS/GEM communication

Compact, space-saving, energy-efficient! High-performance ultra-high temperature experimental furnace for R&D.

A compact experimental furnace for R&D capable of heating small samples up to 2900°C. It can conduct various high-temperature heating experiments and new material development in the laboratory. ◆Main Features◆ - Space-saving - Includes rotary pump and compressor - Interlock: water cut-off alarm, overheating, gas pressure drop ◆Basic Specifications◆ - Power supply: AC200V 75A NFB 50/60HZ (C-500) - Max 2900°C (carbon furnace), 2400°C (metal furnace) - Programmable temperature controller, C thermocouple ◆Options◆ - Recorder - Turbo molecular pump - Crucible ◆Main Applications◆ - New material development - Fuel cells - Others

Low-cost minimum necessary configuration (manual control) applicable as tubular furnace, diffusion furnace, and thermal CVD.

**Main Specifications** - Maximum furnace temperature: 1200℃, maximum sample temperature: 950℃ - Small sample size: from a few millimeters to 3-inch wafer size - Number of substrates: approximately 1 to 3 - Manual lift quartz susceptor: with stop position scale and clamp - Furnace core tube: Φ100 x Φ95 x 470L mm - Lifting: manual rotating handle - Temperature control: PID programmable temperature controller - Thermocouples: 2 pairs of K-type thermocouples x1 (for control and over-temperature), K-type bare wire (for furnace core temperature measurement)

Introducing the Thermocera Japan research and development experimental furnace. It can be utilized for material development such as fuel cells and ceramics, as well as ultra-high temperature experiments involving graphite and more.

□■ Featured Lineup ■□ ◉ Mini-BENCH Ultra High Temperature Tabletop Experimental Furnace Max 2000℃ ◉ Mini-BENCH-prism Semi-Automatic Ultra High Temperature Experimental Furnace Max 2000℃ ◉ MiniLab-WCF Ultra High Temperature Wafer Annealing Furnace Max 2000℃ ◉ TVF-110 Quartz Reaction Tube Vertical Furnace Max 1200℃ ◉ Nanofurnace Quartz Reaction Tube Hot Wall Thermal CVD System ◉ ANNEAL Wafer Annealing Device Max 1000℃ *For details, please inquire via document request or download.*

This is a heater for thin film experiments such as PVD and CVD, featuring excellent uniformity, heating characteristics, and controllability. RF/DC bias specifications are also available.

【Supported Substrate Size】 ◉ Φ1inch to Φ6inch 【Thermocouple】 ◉ Type K or Type C 【Heater Wire Material】 ◉ Max 1800℃: Graphite, C/C composite wire (in vacuum, Ar, N2) ◉ Max 1500℃: SiC coated wire (in vacuum, Ar, N2, O2) ◉ Max 1600℃: Tungsten wire (in vacuum, Ar, N2, He, H2) ◉ Max 1400℃: Tantalum wire (in vacuum, Ar, N2, He, H2) ◉ Max 900℃: Kanthal wire (in vacuum, Ar, N2, He, O2, H2) ◉ Max 900℃: NiCr wire (in vacuum, Ar, N2, He, H2, O2, atmosphere)

CVD, PVD (evaporation, sputtering, etc.) high vacuum, ultra-high temperature plate heater for wafer and small chip heating with excellent uniformity and reproducibility.

This is a highly reliable high-temperature vacuum plate heater with numerous adoption records for vacuum thin film experiments at universities and government research institutions. It features terminals that have been treated with discharge prevention insulation for high vacuum, and it incorporates a resistance heating block designed to achieve uniform heating at ultra-high temperatures, allowing the heater plate surface to be rapidly heated to high temperatures. ◆ Heater Specifications ◆ ◎ Heating Element Used - NiCr (SH-IN type), W/BN Composite (SH-BN type) ◎ Maximum Operating Temperature - 850℃ (SH-IN type), 1100℃ (SH-BN type) ◎ Compatible Substrate Sizes - 1 to 6 inches (*1, 1.6 inches is only available in Inconel type) ◎ Operating Atmosphere - SH-IN: Vacuum (1x10-7 Torr), Inert Gas, Atmosphere, O2, NH3, SiH4, CH4, etc. - SH-BN: Vacuum (1x10-7 Torr), Inert Gas, H2, He, CH4, C (*O2 not allowed) ◎ Sample clips for substrate fixation included ◆ Optional Specifications ◆ ◎ Vacuum Flanges (JIS, ICF, ISO) ◎ Substrate Rotation, Up and Down Lifting Mechanism ◎ Heater Controller Model: BWS-PS/HC-Mini

An ultra-high temperature substrate heating stage that allows for substrate elevation, rotation, and RF/DC substrate bias all in one device! 'All-In-One' component.

◉ Compatible with ultra-high vacuum, inert gas atmosphere, and various other process gas atmospheres ◉ Stage vertical movement (substrate or heater elevation, two-stage elevation for substrate & heater) ◉ Substrate rotation ◉ RF (1KW)/DC (800V) bias application (reverse sputtering) ◉ Selection of elements according to the operating environment: Graphite, CC composite, halogen lamp heater, graphite/SiC coating, graphite/PBN coating, PG coating, AlN heater ◉ Various vacuum flange connections: ICF, ISO (KF/LF), JIS (VG/VF) flanges ◉ K, C, R thermocouples included ◉ Other options: temperature control unit, Inc, graphite or SiC substrate holder

Vacuum Ultra-High Temperature Cylindrical Heater Unit Maximum Temperature 1800°C (Graphite, C/C Composite)

◎ Usable environments: In vacuum, in inert gas, etc. ◎ Heating elements: Graphite, C/C composite heaters, SiC coating, PG coating, tungsten, tantalum, etc. ◎ Manufacturing range: Heater section (up to approximately Φ150 x 100mm), introduction flange, temperature control unit ◎ Applications: Sample heating in various vacuum device process chambers, discharge plasma generation units for thermal electron guns (Lab6), rapid heating of gas supply system piping (liquid rapid vaporization) We also offer custom specifications according to your requests. For details, please contact us.

High-temperature crucible heating heater for vacuum use. A versatile heater unit that can be used as an organic deposition source at 800°C and a metal deposition source at 1500°C.

【Main Specifications】 ■ Maximum Control Temperature: 800℃ or 1500℃ ■ Operating Environment: In vacuum or inert gas (*O2 up to 800℃) ■ Heater: Tungsten filament ■ Crucible Volume: 1cc (maximum fill amount 1.5cc) ■ Crucible Material: Alumina (standard) ■ Case Material: SUS304 or Molybdenum ■ Thermocouple: Type K or Type C 【Options】 ⚫ Crucible Material: PBN, Graphite, Quartz ⚫ Heater: NiCr wire, Kanthal wire ⚫ Crucible Volume: 10cc (maximum fill amount 15cc) ⚫ Shutter: Pneumatic or Motor-driven ⚫ Water Cooling Jacket ⚫ Controller (Heater and Shutter Control Box)

Introduction of various experimental devices for research and development in semiconductors, electronic devices, fuel cells, displays, and thin film experiments.

◉ Nano Benchtop Series Thin Film Experimental Equipment - nanoPVD-S10A Magnetron Sputtering Device - nanoPVD-T15A Organic and Metal Film Deposition Device - nanoCVD Graphene Synthesis Device - ANNEAL Wafer Annealing Device - MiniLab Series Flexible Thin Film Experimental Equipment - MiniLab-GB Glove Box Type Thin Film Experimental Equipment - Other components *For more details, please inquire through a request for materials or download.

It is a high-performance vacuum deposition source that can be used as a high-temperature heating cell for vacuum applications, with an organic deposition source up to 800°C and a metal deposition source up to 1500°C.

【Main Specifications】 ■ Maximum Control Temperature: 800℃ or 1500℃ ■ Operating Environment: In vacuum or inert gas (*O2 up to 800℃) ■ Heater: Tungsten filament ■ Crucible Volume: 1cc (maximum fill volume 1.5cc) ■ Crucible Material: Alumina (standard) ■ Case Material: SUS304 or Molybdenum ■ Thermocouple: Type K or Type C 【Options】 ⚫︎ Crucible Material: PBN, Graphite, Quartz ⚫︎ Heater: NiCr wire, Kanthal wire (*for O2) ⚫︎ Crucible Volume: 10cc (maximum fill volume 15cc) ⚫︎ Shutter: Pneumatic or motor-driven ⚫︎ Water Cooling Jacket ⚫︎ Controller (Heater and Shutter Control Box)

High-efficiency magnetron sputtering cathode compatible with RF, DC, and pulse DC for depositing metals and insulators without impurities. It also excels in maintainability.

【Main Specifications】 ■ Supports RF, DC, and Pulse DC ■ Target thickness: 1/16" to 1/4" ■ N-type coaxial connector connection ■ Water-cooled: 4ℓ/min, 0.35Mpa Φ6mm tube connection ■ Case material: SUS304 ■ Target clamp material: Al or SUS304 ■ Bellows (*Flexi-head type) material: SUS316 ■ Insulation material: PEEK/PTFE ■ Sealing material: Viton ■ High-strength magnet pack: NiFe 【Models】 ・MAG-BP (Base port mount) ・MAG-250T-FXH (Φ3/4" x 250mm pipe, flexible tilt head ±45°) ・MAG-250T (Φ3/4" x 250mm pipe mount) ・MAG-ISO (ISO-K type flange connection) ・MAG-CF (CF flange connection)

Compact and space-saving! Ideal for research and development. Flexible configuration for purposes such as deposition, sputtering, and annealing.

The MiniLab-026 is a compact thin film experimental device that uses the smallest 26L volume chamber in the series. 【Small Footprint & Space-Saving】 - Single rack type (MiniLab-026): 590(W) x 590(D)mm 【Excellent Operability & Intuitive Operation Screen】 Windows PC or 7” touch panel. Easy operation that does not require expertise, with maximum safety considerations. 【Main Specifications】 ◉ Chamber: SUS304 clamshell type ◉ All components housed in a 19-inch single rack ◉ Resistance heating evaporation source (up to 4 sources), organic evaporation source (up to 4 sources), or Φ2" magnetron (up to 3 units), substrate heating stage, etc. ◉ High precision film thickness control ◉ Turbo molecular pump + rotary pump (dry pump option) ◉ Glove box connection specification (*specification consultation required) ◉ Abundant options: substrate heating/cooling, rotation, special substrate holder, etc. *For more detailed specifications of the MiniLab series, please contact us.

A semi-custom-made thin film experimental device that can be assembled with the desired configuration for processes such as evaporation, sputtering, electron beam (EB) deposition, and annealing.

【Main Specifications】 - SUS304 60ℓ volume 400x400x400mm front-loading chamber *Large chamber option MiniLab-070 (450 x 450 x 450) - Maximum substrate size: Φ8 inch - Pump: Turbo molecular pump, rotary pump (dry pump also available) - Vacuum exhaust: Automatic control of vacuum/vent - Resistance heating deposition: Up to 4 sources (Model TE1 to TE4 deposition sources) - Organic deposition: Up to 4 sources (Model LTEC-1cc/5cc) - Electron beam deposition: 7cc crucible x 6 (or 4cc crucible x 8) - Φ2 to 4 inch magnetron sputtering cathode x up to 4 sources - Process control: Manual/automatic continuous multilayer film and simultaneous film formation, APC automatic control - Film thickness monitor: Quartz crystal sensor head x 2 - Film thickness control: Inficon SQM-160 (or SQC-310) 2ch/4ch thin film controller - Utilities: Power supply 200V three-phase 15A, water cooling 3ℓ/min, N2 vent 0.1Mkpa - Other options: Substrate heating, cooling, substrate lifting/rotation, plasma etching, dry pump, load lock mechanism

Flexible configuration available upon request for processes such as evaporation, sputtering, and EB. Adopts a tall chamber with a height of 570mm, contributing to improved uniformity during evaporation.

【Main Specifications】 - SUS304 80ℓ volume 400x400x570mm front-loading chamber - Pump: Turbo molecular pump, rotary pump (dry pump also available) - Vacuum exhaust: Automatic control of vacuum/vent - Resistance heating deposition: Up to 4 source points (Model TE1 to TE4 deposition sources) - Organic deposition: Up to 4 sources (Model LTEC-1cc/5cc) - EB electron beam deposition source: 7cc crucible x 6 (or 4cc crucible x 8) - Φ2 to 4 inch magnetron sputtering cathode x up to 4 sources - Process control: Manual or automatic multilayer continuous film deposition/multiple simultaneous film deposition, APC automatic control - Film thickness monitor: Quartz crystal oscillator sensor head x 4 - Film thickness control: Inficon SQM-160 (or SQC-310) multi-channel film deposition controller - Utilities: Power supply 200V three-phase 15A, water cooling 3ℓ/min, N2 vent 0.1Mkpa - Other options: Substrate heating, cooling, substrate elevation/rotation, dry etching, dry scroll pump, load lock mechanism

Storage-compatible glove box PVD flexible thin film experimental device, featuring a tall chamber with a height of 570mm, contributes to improved uniformity during deposition.

【Main Specifications】 - SUS304 80ℓ volume 400x400x570mm front-loading chamber - Pump: Turbo molecular pump, rotary pump (dry pump also available) - Vacuum exhaust: Automatic control of vacuum/vent - Resistance heating deposition: Up to 4 sources (Model TE1 to TE4 deposition sources) - Organic deposition: Up to 4 sources (Model LTEC-1cc/5cc) - EB electron beam deposition source: 7cc crucible x 6 (or 4cc crucible x 8) - Φ2 to 4 inch magnetron sputtering cathode x up to 4 sources - Process control: Manual or automatic continuous multilayer film/simultaneous film formation, APC automatic control - Film thickness monitor: Quartz crystal oscillator sensor head x 4 - Film thickness control: Inficon SQM-160 (or SQC-310) multi-channel thin film controller - Utilities: Power supply 200V three-phase 15A, water cooling 3ℓ/min, N2 vent 0.1Mkpa - Other options: Substrate heating, cooling, substrate elevation/rotation, dry etching, dry pump

Compact and space-saving! Ideal for organic thin film development, all processes such as deposition, sputtering, and annealing can be seamlessly performed within the glove box.

【GB Compatible MiniLab-026/090 Main Specifications】 ◉ Substrate Size: Maximum Φ6" (026), Maximum Φ10" (090) ◉ Chamber: Made of SUS304, UHV compatible (*090 features a sliding door type, with a maintenance door at the back) ◉ 19-inch control rack stored under the workbench ◉ ML Chamber Internal Film Deposition Module: - Resistance heating evaporation source (up to 4 sources) - Organic evaporation source (up to 4 sources) - Φ2" Magnetron cathodes (up to 3 units) - Plasma etching - Substrate heating stage, etc. ◉ High precision film thickness control ◉ Turbo molecular pump + rotary pump (dry scroll pump option) ◉ Other abundant options *For other detailed specifications, please contact us.

High-performance multi-sputtering device 6-element multi-sputter (for Φ4 inch) 4-element multi-sputter (for Φ6, 8 inch)

【Main Specifications】 - Board Size: Supports Max 12 inch - Chamber: SUS304 UHV compatible, 500 x 500 x 500 mm - Achievable Vacuum Level: 5 x 10^-5 Pascal - Sputter Cathode: Φ2" (max 6), Φ3" (max 4) - Plasma Power Supply: RF 150W, 300W, DC 850W, HiPIMS 5KW - MFC x 3 systems (Ar, O2, N2) for reactive sputtering - Turbo Molecular Pump + Dry Scroll Pump - Main Chamber RIE Etching Stage RF 300W - LL Chamber <30W Low Power Control *Soft Etching *Unique "Soft-Etching" technology reduces substrate damage through substrate bias - Touch Panel or Windows PC Control: Operations are not dispersed; all operations can be performed via touch panel/PC. - Equipment Installation Dimensions: 1,767(W) x 754(D) x 1,645(H) mm ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, etc. are also possible. ● Multi-chamber systems can also be manufactured.

Plasma CVD equipment compatible with wafer sizes of Φ3 inch and Φ4 inch. Rapid synthesis of clean, high-quality graphene while suppressing impurities.

【Example of Device Configuration】 - Substrate: Cu, Ni, etc. (film, foil) - Raw materials: CH4, C2H4, solids (PMMA), etc. - Process gases: H2, Ar, N2, etc. - Substrate size: Φ4 inch - 150W, 13.56MHz RF power supply - Substrate heating from 500℃ to a maximum of 1100℃ - High-precision process gas pressure APC control - Mass flow controller with a maximum of 4 channels

Two thin-film experimental devices are connected with a load-lock mechanism. Different film deposition devices (sputtering, evaporation, etc.) are seamlessly connected with the load-lock.

【Device Configuration Example】 *Chamber-1. MiniLab-E080A (Evaporation Device) ・EB Evaporation: 7cc Crucible x 6 ・Resistance Heating Evaporation x 2 ・Organic Evaporation Limit x 2 *Chamber-2. MiniLab-S060A (Sputtering Device) ・Φ2" Magnetron Cathode x 4, Simultaneous Sputtering, DC and RF Compatible *Chamber-3. Load Lock Chamber ・Plasma Etching Stage In the load lock chamber, plasma cleaning of the substrate surface is performed using the "RF/DC Substrate Bias Stage," and the company's proprietary 'Soft Etching' technology allows for <30W low-power, damage-free plasma etching stages. This enables delicate etching processes that are prone to damage, such as 2D (removal of resists like PMMA), graphene delamination, and etching of Teflon substrates. (*This can also be installed in the main chamber stage.)

Due to its modular embedded design, it is possible to flexibly assemble dedicated equipment according to the required film formation method. A compact thin-film experimental device that can accommodate various research applications.

【MiniLab Flexible Thin Film Experimental Device Configuration Modules】 ◉ Manufacturing Range Resistance Heating Deposition (TE), Organic Film Deposition (LTE), Electron Beam Deposition (EB), RF/DC Sputtering (SP), T-CVD/PE-CVD, Plasma Etching (RIE) ◉ Chambers ・026 (26 Liters) - TE/LTE/SP/CVD/Etch/*Globe Box option: Max Φ6 inch ・060 (60 Liters) - TE/LTE/EB/SP/Etch/: Max Φ8 inch ・080 (80 Liters) - TE/LTE/EB/SP/Etch/: Max Φ10 inch ・090 (90 Liters) *Globe Box option - TE/LTE/EB/SP/Etch/: Max Φ10 inch ・125 (125 Liters) - TE/LTE/EB/SP/Etch/CVD: Max Φ12 inch * For other specifications, please refer to our website.

High-performance, cost-effective RF/DC magnetron sputtering system for research and development.

◉ All operations and recipe management are centrally controlled via a 7" touch panel. ◉ User-registered film recipes and process controls (vacuum draw/venting, film deposition rate, APC automatic pressure control, cathode switching, shutter opening and closing, heating/lifting and rotating adjustments, etc.) can be fully automated (manual operation is also possible). The accompanying software for Windows PC (IntelliLink) allows for equipment monitoring and data logging. 【Main Specifications】 - RF/DC magnetron system - 2-inch magnetron cathodes x up to 3 - RF power: 150W automatic matching - DC power: 850W - Compatible substrate size: up to 4 inches - Substrate rotation, vertical lifting, heating (500℃) - Process gas control: MFC x 1 (Ar standard, up to 3 additional systems: N2, O2) - APC automatic control (capacitance manometer optional) - Quartz oscillator film thickness monitor - Shutter - Dimensions: 804(W) x 570(D) x 600(H) mm - Weight: approximately 70 kg - Power supply: 200VAC 50/60Hz 15A - Chamber size: Φ225 (inner diameter) x 250 mm - Vacuum system: TMP + RP (dry pump optional)

We have incorporated all the latest vacuum deposition technology into a compact benchtop-sized device that can effectively utilize limited lab space.

◉Dimensions: 804(W) x 530(D) x 600(H)mm ◉Weight: 40kg to 70kg (depending on equipment configuration) ◉Excellent basic performance ・Achievable vacuum level 5x10-5 Pascal ・Equipped with high-performance turbo molecular pump ・Supports substrates up to Φ4 inches ◉Evaporation sources ・Metal evaporation source TE x up to 2 units ・Organic evaporation source LTE x up to 4 units (if mixed with resistive heating TE, up to 2 units) ◉7" touch panel ◉Continuous film deposition ・Automatic control of deposition program ・30 types of registered recipes ・High-precision wide-range vacuum gauge ◉Rich options ・Substrate rotation ・Vertical lift with 300mm stroke ・Substrate shutter ・Dry pump (RP standard) ・Connect to Windows PC via USB for log storage and management

Composite thin film experimental device nanoPVD-ST15A capable of mixed installation of vacuum deposition (metal and organic deposition sources) and sputtering cathodes.

◆Film Formation Source◆ - Φ2 inch Magnetron Sputter Cathode x 1 - Resistance Heating Evaporation Source (up to 2) - Organic Evaporation Source (up to 2) ◆Substrate Size◆ - Up to Φ4 inch/Φ100 mm Substrate Holder (custom holder available upon consultation) ◆Film Thickness Sensor◆ - Quartz Crystal Film Thickness Sensor x 1 ◆Vacuum Exhaust◆ - Turbo Molecular Pump, Rotary Pump ◆Included Software◆ - IntelliLink Windows PC Remote Monitoring Software ◆Options◆ - Substrate Heating Heater Max 500℃ - Dry Scroll Pump ◆Utilities◆ - Power Supply: AC200V Single Phase 50/60HZ 15A - Process Gas: 0.2Mpa - Vent Gas: 0.04Mpa - Compressed Air: 0.6Mpa - Cooling Water: 2L/min 0.2Mpa ◆Main Applications◆ - New Material Development - Fuel Cells - Others

<30W Low power - Etching control precision 10mW Achieving damage-free and delicate etching processing.

**Features and Main Applications** • 2D (Transition Metal Chalcogenides, Graphene exfoliation after material transfer): Surface modification cleaning • Removal of polymer resists such as PMMA and PPA • Surface modification and etching on substrates prone to damage, such as Teflon substrates • h-BN sidewall etching (*'Fluorine Gas Supply Module' option, requires SF6 gas system) • SiO2 etching (*'Fluorine Gas Supply Module' option, requires CHF3 gas system) **Specifications** ◉ Compatible substrates: Up to Φ6 inches ◉ Easy operation with 7" touch panel and PLC automatic sequence ◉ APC automatic pressure control ◉ Up to 3 gas systems (Ar, O2 standard included) *N2 or fluorine gas system can be added ◉ Included PC software: Automatic etching recipe creation, saving, and data logging **Dimensions and Utilities** Dimensions: 750 (W) x 500 (D) x 400 (H) mm Power supply: 200V single phase 15A Process gas: 0.17Mpa 99.99% recommended Vent gas: 34-41kpa Cooling water: 1L/min, 400kpa, 18-20℃ Compressed air: 413-550Kpa

◉ Short time: Easily conduct graphene synthesis experiments in just 30 minutes per batch. ◉ High-precision temperature and pressure control. ◉ Sophisticated software.

◆Features◆ - Easy operation! Control and recipe management via a 5-inch touch panel - Capable of creating programs with up to 30 recipes and 30 steps - Includes PC software for USB cable connection, offline recipe creation on PC → upload/download to the device, CSV data output - Maximum sample size: 40 x 40mm: Copper (nickel) foil, SiO2/Si, Al2O3/Si substrates, etc. ◆Model: nanoCVD-8G (for Graphene)◆ - Vacuum process control for graphene production - Standard rotary pump included (optional: dry scroll pump) - Three gas supply systems (Ar, H2, CH4) - Sample heating stage Max 1100℃ - K-type thermocouple * Raw materials such as Ar, H2, CH4 and raw material supply equipment are not included.

Max 1000℃, maximum 3 systems for MFC, APC pressure control, compatible with 4" or 6" substrates, high vacuum annealing equipment (<5 × 10^-7 mbar)

◉ Substrate size: Φ4 inch or 6 inch ◉ SUS304 water-cooled chamber ◉ Achievable pressure: 5x10-5 Pascal ◉ Up to 3 process gas inputs ◉ Up to 3 mass flow controllers (optional) ◉ 7" HMI touch panel ◉ High-precision wide-range vacuum gauge: 10-9 to 1000 mbar ◉ USB port with PC data logging function ◉ Turbo molecular pump: EXT75DX (Edwards) ◉ Rotary pump: RV3/RV8 (Edwards) (*can be changed to a dry pump) ◉ K-type thermocouple (for heater control) included

Hot Wall Type Thermal CVD Equipment: A compact, high-performance CVD device ideal for fundamental research.

**Features** ◉ High-quality film deposition experiments possible with a compact system ◉ Uniform heating of the reaction tube using a hot-wall design ◉ High-precision flow control with 4 channels (CH4, Ar, H2, for bubbler): Accuracy ±1% F.S. ◉ High-precision APC pressure control using a capacitance manometer (Baratron gauge) ◉ Remote control and data analysis via Lab View software (optional) **Main Specifications** ◉ Φ2.5 inch (standard) Φ4 inch x 12 inch quartz reaction tube ◉ Maximum operating temperature 1100℃ ◉ Sample size: 10x10mm, (Φ2.5 inch) 100 x 100mm (Φ4 inch) ◉ PID temperature control: Eurotherm 2416 programmable temperature controller ◉ Flow control: ±1% F.S. 0 sccm to 100, or 1000 sccm (depending on gas type) ◉ Includes rotary pump