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Soft Etching Device [nanoETCH]

<30W Low power - Etching control precision 10mW Achieving damage-free and delicate etching processing.

【nanoETCH】Model. ETCH5A Achieves fine and damage-free etching processing with low output RF etching at <30W (control accuracy 10mA). A jointly developed product with the graphene research group at the University of Manchester, led by Nobel Prize winners who discovered graphene in 2010.

Thermosera Japan nanoETCH Product Listing Page

basic information

**Features and Main Applications** • 2D (Transition Metal Chalcogenides, Graphene exfoliation after material transfer): Surface modification cleaning • Removal of polymer resists such as PMMA and PPA • Surface modification and etching on substrates prone to damage, such as Teflon substrates • h-BN sidewall etching (*'Fluorine Gas Supply Module' option, requires SF6 gas system) • SiO2 etching (*'Fluorine Gas Supply Module' option, requires CHF3 gas system) **Specifications** ◉ Compatible substrates: Up to Φ6 inches ◉ Easy operation with 7" touch panel and PLC automatic sequence ◉ APC automatic pressure control ◉ Up to 3 gas systems (Ar, O2 standard included) *N2 or fluorine gas system can be added ◉ Included PC software: Automatic etching recipe creation, saving, and data logging **Dimensions and Utilities** Dimensions: 750 (W) x 500 (D) x 400 (H) mm Power supply: 200V single phase 15A Process gas: 0.17Mpa 99.99% recommended Vent gas: 34-41kpa Cooling water: 1L/min, 400kpa, 18-20℃ Compressed air: 413-550Kpa

Price information

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Delivery Time

Model number/Brand name

nanoETCH Model.ETCH5A

Applications/Examples of results

2D applications such as graphene and TMDC Resist removal such as PPA and PPMA Damage-free etching on substrates like Teflon, etc.

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