◆ANNEAL◆ Wafer Annealing Equipment
Max 1000℃, maximum 3 systems for MFC, APC pressure control, compatible with 4" or 6" substrates, high vacuum annealing equipment (<5 × 10^-7 mbar)
High-temperature processing up to 1000°C is possible with a heating stage installed in a high vacuum water-cooled SUS chamber. A heat shield is installed inside the chamber to ensure safety through interlock. The mass flow controller can be expanded to a maximum of three systems, allowing for firing operations at precisely adjusted process gas pressures (with the APC automatic process control system option). Additionally, there are many options available, including a front viewport, dry scroll pump, special substrate holder, and additional thermocouples. The heating stage inside the chamber has three variations depending on the process gas atmosphere and treatment temperature. - Halogen lamp heater: Max 500°C - C/C composite heater: Max 1000°C (only in vacuum or inert gas) - SiC coating heater: Max 1000°C (in vacuum, inert gas, O2)
basic information
◉ Substrate size: Φ4 inch or 6 inch ◉ SUS304 water-cooled chamber ◉ Achievable pressure: 5x10-5 Pascal ◉ Up to 3 process gas inputs ◉ Up to 3 mass flow controllers (optional) ◉ 7" HMI touch panel ◉ High-precision wide-range vacuum gauge: 10-9 to 1000 mbar ◉ USB port with PC data logging function ◉ Turbo molecular pump: EXT75DX (Edwards) ◉ Rotary pump: RV3/RV8 (Edwards) (*can be changed to a dry pump) ◉ K-type thermocouple (for heater control) included
Price information
Please contact us.
Delivery Time
Model number/Brand name
ANNEAL
Applications/Examples of results
- Development of thin films for electronic substrates, semiconductors, display screens, etc. - Development of coating materials and thin film materials - Industrial applications of optical thin films and decorative films, etc.
Detailed information
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ANNEAL front photo Device dimensions: 750(W) x 500(D) x 400(H)mm Weight: Approximately 40kg (*depending on device configuration)
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Halogen lamp heating stage Surface thermocouple installation
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Halogen lamp heating stage interior.
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C/C Composite Heater Heating Stage - CCC Heater Stage: Max 1000°C (Vacuum, Inert Gas) - SiC Coating Stage: Max 1000°C (Vacuum, Inert Gas, O2)
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Main menu screen
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Graph display
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Wafer Annealing Equipment [ANNEAL] Max 1000℃ APC Automatic Pressure Control MFC x3 System Compatible with Φ4 to 6 inch Substrates
Max 1000℃, MFC up to 3 systems, APC pressure control, compatible with substrates from 4" to a maximum of 6", high vacuum annealing device (<5 × 10-7 mbar) [ANNEAL] is a research and development annealing device capable of high-temperature heat treatment of substrates such as wafers in a stable process atmosphere. It allows high-temperature processing up to 1000℃ using a heating stage installed in a high vacuum water-cooled SUS chamber. A heat shield is installed inside the chamber to ensure safety through interlock. The mass flow controller can be expanded to a maximum of 3 systems, enabling firing operations with precisely adjusted process gas pressure (APC automatic process control system option). Additionally, there are many options available, including a front view port, dry scroll pump, special substrate holder, and additional thermocouples. The heating stage inside the chamber has three variations depending on the process gas atmosphere and treatment temperature: - Halogen lamp heater: Max 500℃ - C/C composite heater: Max 1000℃ (in vacuum, inert gas only) - SiC coating heater: Max 1000℃ (vacuum, inert gas, O2)
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