Magnetron Sputtering Cathode
High-efficiency magnetron sputtering cathode compatible with RF, DC, and pulse DC for depositing metals and insulators without impurities. It also excels in maintainability.
【Features】 - Compatible with high vacuum - Available in sizes Φ2 inch, Φ3 inch, Φ4 inch - Adopts a clamp ring type, no bonding required - Excellent maintainability, easy target replacement - Rich options including shutters, chimney ports, gas injection, high-strength magnets for magnetic materials, etc. - Compatible with various flange sizes for connection
basic information
【Main Specifications】 ■ Supports RF, DC, and Pulse DC ■ Target thickness: 1/16" to 1/4" ■ N-type coaxial connector connection ■ Water-cooled: 4ℓ/min, 0.35Mpa Φ6mm tube connection ■ Case material: SUS304 ■ Target clamp material: Al or SUS304 ■ Bellows (*Flexi-head type) material: SUS316 ■ Insulation material: PEEK/PTFE ■ Sealing material: Viton ■ High-strength magnet pack: NiFe 【Models】 ・MAG-BP (Base port mount) ・MAG-250T-FXH (Φ3/4" x 250mm pipe, flexible tilt head ±45°) ・MAG-250T (Φ3/4" x 250mm pipe mount) ・MAG-ISO (ISO-K type flange connection) ・MAG-CF (CF flange connection)
Price information
Please contact us.
Delivery Time
Model number/Brand name
Magnetron sputtering cathode
Applications/Examples of results
Various vacuum thin film experiments and research and development applications for semiconductors and electronic substrates.
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◇◆◇ nanoPVD-S10A Magnetron Sputtering Device ◇◆◇
This is a research and development RF/DC magnetron sputtering device. Despite its high performance and multifunctionality, it fits into limited laboratory space with a compact size and easy operation via a 7-inch front touch panel. ● Achievable pressure: 5x10^-5 Pa (*fastest 30 minutes to 1x10^-4 Pa!) ● Film uniformity: ±3% ● Various options: up/down rotation, heater, cathode for magnetic materials, and more ● 3-source cathode + 3 MFC systems, with additional RF/DC power supply, allowing for versatile applications such as multilayer films and simultaneous deposition. - Insulating films - Conductive films - Compounds, etc. 【Main Features】 ◉ Compatible substrates: 2" (up to 3 sources) or 1" (1 source) ◉ 2" cathode x up to 3 sources ◉ Easy operation via touch panel with PLC automatic program control ◉ High-precision APC process control with MFC ◉ Up to 3 MFC systems ◉ USB port for Windows PC connection, capable of creating and saving recipes for up to 1000 layers and 50 films. Live data logging on PC. ◉ Vacuum system: TMP + RP (*dry pump option) ◉ Substrate rotation, vertical lift, and heating (Max 500℃) ◉ Quartz crystal film thickness monitor/controller
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☆★☆【nanoETCH】Soft Etching Device☆★☆
<30W Low Power Control for Damage-Free Etching Achieves delicate etching processes with an output control precision of 10mW. A jointly developed product with the graphene research group at the University of Manchester, led by Nobel Prize winners who discovered graphene in 2010. 【Features】 • 2D (Transition Metal Chalcogenides, graphene delamination after material transfer): Surface modification cleaning • Removal of polymer resists such as PMMA and PPA • Surface modification and etching on substrates prone to damage, such as Teflon substrates • h-BN sidewall etching (*Option for "Fluorine Gas Supply Module," requires SF6 gas system) • SiO2 etching (*Option for "Fluorine Gas Supply Module," requires CHF3 gas system) 【Specifications】 ◉ Compatible substrates: Up to Φ6 inches ◉ Easy operation with a 7" touch panel and PLC automatic sequencing ◉ Automatic pressure control (APC) ◉ One Ar gas line (standard) + up to three additional lines for N2 and O2 ◉ Connects to a Windows PC with a USB port for automatic etching recipe creation and storage. Data logging on PC.
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◆HTE Heater◆ High Vacuum Crucible Heating Heater Max 1500℃
The HTE heater is a high-temperature heating heater for vacuum devices with a maximum operating temperature of 1500°C. It can evaporate materials with high evaporation temperatures, making it suitable for a wide range of applications as a vacuum high-temperature heater and deposition cell, from low-temperature organic deposition (up to 800°C) cells to high-temperature resistance heating deposition (up to 1500°C) MBE cells. Shutter actuators and water-cooled jackets are also available. The high-temperature heater specification above 800°C is designed with internal shielding, considering insulation and thermal shielding. 【Main Specifications】 ■ Maximum control temperature: 800°C or 1500°C ■ Operating environment: In vacuum or inert gas (*O2 up to 800°C) ■ Heater: Tungsten filament ■ Crucible volume: 1cc (maximum filling amount 1.5cc) ■ Crucible material: Alumina ■ Case material: SUS304 or Molybdenum ■ Thermocouple: K or C 【Options】 ⚫ Crucible material: PBN, Graphite, Quartz ⚫ Heater: NiCr wire, Kanthal wire (*for O2) ⚫ Crucible volume: 10cc (maximum filling amount 15cc) ⚫ Shutter: Pneumatic or motor-driven ⚫ Water-cooled jacket ⚫ Controller (for heater and shutter control)
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BH Series [UHV Compatible Ultra-High Temperature Vacuum Thin Film Experiment Substrate Heater] Max 1800℃
High vacuum compatible with a variety of heater material options. Can be applied to PVD (sputtering, deposition, EB, etc.), high-temperature vacuum annealing, high-temperature analysis substrate stages, and more. Custom-made to meet various specifications upon request. 【Features】 ● Easy replacement of the pre-heater wire ● Easy installation and maintenance (M6 stud bolts, supports) 【Compatible Substrate Sizes】 ◉ Φ1 inch to Φ6 inch 【Standard Accessories】 ● Thermocouple: wire type with alumina insulation sleeve ● Mounting stud bolts 【Options】 ● Non-standard heater wires (Nb, Mo, Pt/Re, WRe, etc.) ● Substrate holding clips ● Mounting brackets ● Substrate holders ● Tapped hole processing for holder installation ● Change of top plate material (PBN, quartz, carbon, Inconel, etc.) ● Additional thermocouples for overheating ● Base flange, vacuum introduction terminal
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![Multisource Simultaneous Sputtering Device [MiniLab-S125]](https://image.mono.ipros.com/public/news/image/1/2d3/12548/IPROS06137231868342339221.jpeg?w=280&h=280)
【MiniLab-125】 Multi-target sputtering system (compatible with Φ8") equipped with a 1000℃ heater stage (SiC coating)! Compact size!
Multifunctional Multi-Sputtering Device (Compatible with Φ8inch Substrates) - Triple-source simultaneous deposition + Single-source Pulse DC sputtering - Flexible arrangement of RF500W and DC850W power supplies to the three-source cathodes (Source 1, 2, 3) - Equipped with a 5KW Pulse DC power supply → Used with dedicated cathode (4) - Substrate heating stage Max 800℃ (SiC-coated heater can achieve Max 1000℃) - MFC x 3 systems (Ar, O2, N2) for reactive sputtering - Main chamber RIE etching stage RF300W - LL chamber <30W low-power controlled soft etching - Unique "Soft-Etching" technology reduces substrate damage through substrate bias - Touch panel or Windows PC operation: All operations can be performed via touch panel/PC without dispersing control. - Equipment installation dimensions: 1,960(W) x 1,100(D) x 1,700(H) mm - Multi-chamber configurations are also possible. ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc., can also be configured.
