Multifunctional Multi-Sputtering Device (Compatible with Φ8inch Substrates) - Triple-source simultaneous deposition + Single-source Pulse DC sputtering - Flexible arrangement of RF500W and DC850W power supplies to the three-source cathodes (Source 1, 2, 3) - Equipped with a 5KW Pulse DC power supply → Used with dedicated cathode (4) - Substrate heating stage Max 800℃ (SiC-coated heater can achieve Max 1000℃) - MFC x 3 systems (Ar, O2, N2) for reactive sputtering - Main chamber RIE etching stage RF300W - LL chamber <30W low-power controlled soft etching - Unique "Soft-Etching" technology reduces substrate damage through substrate bias - Touch panel or Windows PC operation: All operations can be performed via touch panel/PC without dispersing control. - Equipment installation dimensions: 1,960(W) x 1,100(D) x 1,700(H) mm - Multi-chamber configurations are also possible. ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc., can also be configured.

◉ Maximum operating temperature Max 2000℃ ◉ PLC semi-automatic control A higher model of the tabletop Mini-BENCH with semi-automatic control Automatically controls each process of "vacuum/purge cycle," "gas replacement," and "venting" Maximum operating temperature 2000℃ Semi-automatic control ultra-high temperature experimental furnace (carbon furnace, tungsten metal furnace) Compact and space-saving experimental furnace ◉ Effective heating range (crucible dimensions) - Planar heater heating range: Φ2 inch to Φ6 inch - Cylindrical heater heating range: Φ30 to Φ80 x Depth Max 100(H) mm ◉ Up to 3 MFC systems for automatic flow control (or manual adjustment) ◉ APC automatic pressure control ◉ Ensures safety during operation Monitors abnormal cooling water, chamber temperature, and overpressure. Made of SUS, the robust water-cooled chamber can be safely used even during continuous operation at maximum temperature. ◉ Compact and space-saving Width 603 x Depth 603 x Height 1,160 mm (*Installed inside rotary pump housing) Various sample heating experiments, such as ultra-high temperature heating of small samples and new material research and development, can be easily performed with simple operations. The main unit is compact yet can be used for research and development in various fields.

This is a research and development RF/DC magnetron sputtering device. Despite its high performance and multifunctionality, it fits into limited laboratory space with a compact size and easy operation via a 7-inch front touch panel. ● Achievable pressure: 5x10^-5 Pa (*fastest 30 minutes to 1x10^-4 Pa!) ● Film uniformity: ±3% ● Various options: up/down rotation, heater, cathode for magnetic materials, and more ● 3-source cathode + 3 MFC systems, with additional RF/DC power supply, allowing for versatile applications such as multilayer films and simultaneous deposition. - Insulating films - Conductive films - Compounds, etc. 【Main Features】 ◉ Compatible substrates: 2" (up to 3 sources) or 1" (1 source) ◉ 2" cathode x up to 3 sources ◉ Easy operation via touch panel with PLC automatic program control ◉ High-precision APC process control with MFC ◉ Up to 3 MFC systems ◉ USB port for Windows PC connection, capable of creating and saving recipes for up to 1000 layers and 50 films. Live data logging on PC. ◉ Vacuum system: TMP + RP (*dry pump option) ◉ Substrate rotation, vertical lift, and heating (Max 500℃) ◉ Quartz crystal film thickness monitor/controller

The HTE heater is a high-temperature heating heater for vacuum devices with a maximum operating temperature of 1500°C. It can evaporate materials with high evaporation temperatures, making it suitable for a wide range of applications as a vacuum high-temperature heater and deposition cell, from low-temperature organic deposition (up to 800°C) cells to high-temperature resistance heating deposition (up to 1500°C) MBE cells. Shutter actuators and water-cooled jackets are also available. The high-temperature heater specification above 800°C is designed with internal shielding, considering insulation and thermal shielding. 【Main Specifications】 ■ Maximum control temperature: 800°C or 1500°C ■ Operating environment: In vacuum or inert gas (*O2 up to 800°C) ■ Heater: Tungsten filament ■ Crucible volume: 1cc (maximum filling amount 1.5cc) ■ Crucible material: Alumina ■ Case material: SUS304 or Molybdenum ■ Thermocouple: K or C 【Options】 ⚫ Crucible material: PBN, Graphite, Quartz ⚫ Heater: NiCr wire, Kanthal wire (*for O2) ⚫ Crucible volume: 10cc (maximum filling amount 15cc) ⚫ Shutter: Pneumatic or motor-driven ⚫ Water-cooled jacket ⚫ Controller (for heater and shutter control)

Introducing various experimental devices for research and development in semiconductors, electronic devices, fuel cells, displays, and thin film experiments. We present a range of thin film experimental devices and components for the research and development field. 【nano Benchtop Series】 Desktop type, high performance! nano Benchtop series thin film experimental devices Compact size housing high-functionality and high-spec thin film equipment. 【MiniLab Flexible Thin Film Experimental Device】 A "flexible experimental device" that combines various device configurations and necessary components according to specified requirements. ● Featured Devices - nanoPVD-S10A desktop magnetron sputtering device - nanoPVD-T15A desktop organic film and metal film deposition device - nanoCVD graphene synthesis device - ANNEAL desktop wafer annealing device - MiniLab series flexible thin film experimental device - MiniLab-GB glove box type thin film experimental device - Other components