Total solution service for power devices
We thoroughly evaluate and verify power devices from every angle.
■Problem-Solving Ability Consulting that leads to solutions with knowledge and technology Supporting customer schedules with quick responses ■Investigative Ability Skills to pinpoint and visualize malfunctioning areas Deep insight and advanced, delicate sample processing techniques ■Specialized Equipment Liquid tank thermal shock testing at up to 180°C Power cycle testing essential for power semiconductors
basic information
■Reliability Testing of Power Devices - Power Cycle Testing Constant current 600A max. (Vce=10V) Simultaneous thermal resistance measurement is also possible - 180℃ Compatible Liquid Bath Thermal Shock Testing Temperature range -65℃ to 150℃, -40℃ to 180℃ Liquid medium Galden D02TS/D03 Sample basket (maximum) W320 x H240 x D320 (mm) - Characteristic Evaluation using Power Device Analyzer Maximum voltage 3000V, maximum current 20A Wide compatibility from small components to power devices - Insulation Evaluation Ion Migration Testing Accelerated testing by applying a voltage higher than actual usage conditions in high temperature and high humidity environments Testing to confirm that migration does not occur within the guaranteed lifespan of the power device - High Temperature Reverse Bias/Gate Bias Testing Continuous monitoring of insulation resistance values in high temperature and high humidity environments Number of channels 120 channels ■Analysis and Examination of Power Devices - Failure Analysis of Power Chips - Analysis of Solder Joints - Grain Observation of Al Wires using Ultra-Low Acceleration Special SEM - Non-Destructive Observation of Semiconductor and Package Delamination
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Applications/Examples of results
■Analysis of Light Emission from SiC MOSFETs
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News about this product（4）
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Announcement of the introduction of Talos F200E
Our company will introduce the FEI "Talos F200E" transmission electron microscope system. Compared to conventional models, the resolution for TEM and STEM has improved, and performance has been significantly enhanced, allowing for EDS analysis with four detectors. Additionally, it is equipped with features such as drift-corrected frame integration (DCFI), which accumulates multiple frames while correcting for drift.
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Power device failure location / Slice & View three-dimensional reconstruction
I will introduce the three-dimensional reconstruction of failure locations using the Slice & View function of FIB-SEM. Continuous SEM images of the structure are obtained, and the resulting images are corrected for positional misalignment between the SEM images and visualized in three dimensions using 3D construction software (Avizo). By combining the position identification technique for cross-sectioning the failure location with the Slice & View function, it is possible to obtain continuous SEM images that retain the defective state and include information before and after the abnormal area.
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IOL testing of discrete semiconductors
Our company conducts "IOL testing of discrete semiconductors." We repeatedly turn the power ON/OFF in a room temperature environment, applying stress to the device due to temperature changes caused by the device's own heat generation during power ON. During power OFF (cooling), forced cooling is also performed using a fan. Additionally, before conducting the tests, we use representative samples to make adjustments to reach the test temperature conditions. It is possible to adjust the current/time during heating and the fan capacity/timing during cooling.
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Reverse bias test of power devices (up to 2000V)
At Aites Co., Ltd., high-temperature reverse bias testing (HTRB) for evaluating the oxide film and junction of power devices can be applied up to a maximum of 2000V. By monitoring the leakage current during the test, the degradation status of the device can be grasped in real-time. Since the power supply is independent, if one device fails during the test, it will not affect the other devices. Additionally, it is possible to set a failure criterion (current value) and to cut off the power supply to the device deemed faulty at the time of failure judgment. 【Specifications and Service Details】 ■ Test Voltage: Up to a maximum of DC 2000V ■ Applied Current: Up to a maximum of 14mA ■ Number of Test Devices: Up to a maximum of 8 (independent power supply) ■ Compatible Modules: TO-247, TO-220, etc. (other packages require consultation regarding connection methods) ■ Measurement Content: Monitoring of leakage current ■ Temperature Range: Up to a maximum of 200°C (85°C/85% in high temperature and high humidity conditions)
