Defects and Physical Analysis
Defects and Physical Analysis
At Aites, we provide analysis and reliability evaluation services.
1～30 item / All 40 items
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Total Solution for Quality Technology
We provide quick and accurate solutions based on technology and experience for quality initiatives that consider performance, reliability, disposal, and recycling from the product planning stage.
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IC failure analysis
By combining various methods suitable for failure modes, we can consistently address everything from the identification of defective nodes to physical analysis.
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Analysis of semiconductor diffusion layers using sMIM
Detect changes in concentration as changes in C! The dC/dV signal can also be obtained, which is effective for analyzing the diffusion layer.
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Failure analysis of power devices
We will identify and observe the defective areas of power devices such as diodes, MOS-FETs, and IGBTs.
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Analysis of electronic components and materials using TEM.
TEM (Transmission Electron Microscope) meets a wide range of requirements for observing failure sites of electronic components, length measurements, elemental analysis, crystal structure analysis, and material evaluation.
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Cross-beam FIB cross-sectional observation
It is possible to observe cross-sections while observing FIB processing in real time.
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Total solution service for power devices
We thoroughly evaluate and verify power devices from every angle.
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Total support service for LED.
We will thoroughly evaluate and verify the LED from all angles.
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[Data] Examples of Defects and Analysis of Solar Cells
We are presenting examples of defect analysis and investigation conducted through various approaches!
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We provide comprehensive support for reliability testing, analysis, and evaluation of electronic components!
Transitional thermal measurement possible power cycle testing, with a customized luminescence/OBIRCH analysis device, where a skilled team thoroughly evaluates and analyzes power devices!
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OBIRCH analysis of SiC devices using short-wavelength lasers.
Since semiconductors have different physical properties, new methods are required for failure analysis!
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Failure analysis of an orange LED damaged by electrostatic discharge.
We will introduce a comparison of brightness and characteristics between good products and ESD-damaged products, along with examples of luminescence analysis using EMS microscopy!
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Backside light emission analysis of SiC devices
Pre-processing of SiC devices → Identification of leakage points → Physical analysis/component analysis handled seamlessly!
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Observation of the diffusion layer of SiC MOSFET using LV-SEM and EBIC methods.
Even with SiC power devices, we can provide consistent support for cross-section preparation of specific areas, observation of diffusion layer shapes, as well as wiring structure and crystal structure analysis!
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Analysis of good LCD panels
Check the quality status of LCD components and products! We will analyze the structures of the LCD panels using our analytical methods and expertise!
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Evaluation of membrane quality using EELS analysis method
EELS analysis for element identification allows for the comparison of the bonding states of materials!
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Narrowing down defective areas using the EBAC (Absorption Current) method.
"SEM images" and "absorption current images (current sensing)" etc.! It identifies open defects in wiring and areas with high resistance defects.
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Observation of diffusion layers in semiconductors using FIB-SEM.
Shorter delivery time than his method! Both shape observation using FIB-SEM and diffusion layer observation can be performed!
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Power semiconductor analysis service
We will handle everything from the evaluation of the diffusion layer to physical analysis/chemical analysis regarding the malfunctioning part!
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Defective analysis of liquid crystal panels
We will narrow down the defective areas through lighting confirmation, panel disassembly, and optical microscope observation!
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LED failure analysis
Applying advanced sample preparation techniques and failure analysis equipment for semiconductors! Investigating the causes of non-lighting and brightness degradation.
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Backside polishing of semiconductors for luminescence analysis.
Back grinding is possible with various types of semiconductors! You can observe the elements and the condition of defects.
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Flow of Chemical Analysis
Clarifying the functions, characteristics, and conditions of products and materials. We propose analytical methods tailored to the analysis target and purpose.
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Identification of failure locations in electronic components through thermal analysis.
It is possible to perform non-destructive testing from fault location identification to internal observation! High-precision identification of heat generation areas can be achieved.
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X-ray observation of electrolytic capacitors
We conducted visual inspections and internal observations using X-ray CT for normal products and degraded products!
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Oblique CT observation of the laminated substrate.
In a multilayer substrate, it is possible to obtain information for each layer! By using a length measurement tool, you can measure the length.
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Evaluation of TFT characteristics of liquid crystal panels
We can perform good product characteristic measurements for performance verification, as well as defective characteristic measurements and reliability evaluations!
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LCD Panel Analysis Data Collection
If you're having trouble with LCD analysis, we at ITES are here to help you find a solution!
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Announcement of the Introduction of FIB-SEM Helios 5 UC
Cross-section production of soft materials has also been realized! 3D reconstruction is possible with Auto Slice & View!
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Analysis of defects in overseas manufactured displays.
Numerous achievements in defect analysis! Detailed analysis is possible, from confirming phenomena to hypothesizing the mechanisms of defect occurrence.
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