Analysis of electronic components and materials using TEM.
TEM (Transmission Electron Microscope) meets a wide range of requirements for observing failure sites of electronic components, length measurements, elemental analysis, crystal structure analysis, and material evaluation.
TEM can perform not only high-magnification observation but also elemental analysis using EDS and EELS, as well as analysis of crystal structure, surface orientation, lattice constants, and more through electron diffraction.
basic information
■The defective area identified by emission luminescence will be observed while thinning it using FIB. ■Using a TEM with an acceleration voltage of 400kV, which has a high electron transmission capability, we can repeatedly perform transmission observation and FIB processing while confining the defective area within the sample thickness to obtain the optimal image. ■The TEM image magnification can be calibrated in advance, allowing for length measurements with an error of less than 2%.
Price information
We will provide a quote as needed based on the content.
Delivery Time
Applications/Examples of results
- TEM observation of specific areas (application to semiconductor failure sites) - Elemental analysis, electron diffraction (EDS, EELS, electron diffraction images) * Analysis of semiconductor products such as TFT failure analysis and MOS FET failure analysis * Structural analysis of LSI
