Cross-beam FIB cross-sectional observation
It is possible to observe cross-sections while observing FIB processing in real time.
A new method for structural analysis of electronics products manufactured with nanoscale precision, such as semiconductor devices, MEMS, and TFTs: We propose cross-beam FIB for cross-sectional observation.
basic information
Structural analysis of electronics products manufactured at the nanoscale, such as semiconductor devices, MEMS, and TFT transistors, will be conducted through cross-beam FIB cross-sectional observation. 1) Real-time observation of FIB processing allows for precise targeting of the desired area. 2) Various information can be obtained from the sample using two secondary electron detectors (In-Lens/Chamber SE). 3) The processing FIB and observation low-accelerating SEM are integrated into a single chamber, allowing for observation without exposure to the atmosphere. 4) Diffusion layer: Visualization of the PN interface is possible. The concentration differences of N+/N- and P+/P- are undetectable.
Price information
We will provide a quote as needed based on the content.
Delivery Time
Applications/Examples of results
Structural analysis of semiconductor devices, MEMS, and TFTs Pinpoint observation of defective areas in failure analysis
