Cross-beam FIB cross-sectional observation
It is possible to observe cross-sections while observing FIB processing in real time.
A new method for structural analysis of electronics products manufactured with nanoscale precision, such as semiconductor devices, MEMS, and TFTs: We propose cross-beam FIB for cross-sectional observation.
basic information
Structural analysis of electronics products manufactured at the nanoscale, such as semiconductor devices, MEMS, and TFT transistors, will be conducted through cross-beam FIB cross-sectional observation. 1) Real-time observation of FIB processing allows for precise targeting of the desired area. 2) Various information can be obtained from the sample using two secondary electron detectors (In-Lens/Chamber SE). 3) The processing FIB and observation low-accelerating SEM are integrated into a single chamber, allowing for observation without exposure to the atmosphere. 4) Diffusion layer: Visualization of the PN interface is possible. The concentration differences of N+/N- and P+/P- are undetectable.
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Applications/Examples of results
Structural analysis of semiconductor devices, MEMS, and TFTs Pinpoint observation of defective areas in failure analysis
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Aites was established in 1993, originating from the quality assurance department of the IBM Japan Yasu office. Based on the technical expertise cultivated through cutting-edge defect analysis and reliability assurance of electronic components at the IBM Japan Yasu office, we have provided various products and services that support the development and manufacturing of semiconductors, displays, organic EL, solar cells, and electronic components to customers both domestically and internationally.