Observation of the diffusion layer of SiC MOSFET using LV-SEM and EBIC methods.
Even with SiC power devices, we can provide consistent support for cross-section preparation of specific areas, observation of diffusion layer shapes, as well as wiring structure and crystal structure analysis!
Our company conducts observations of the diffusion layer of SiC MOSFETs using LV-SEM and EBIC methods. We can perform cross-section fabrication of specific areas using FIB, shape observation of the diffusion layer using LV-SEM/EBIC, and further through analyses of wiring structures and crystal structures using TEM, all applicable to SiC power devices. In "LV-SEM diffusion layer observation," secondary electrons (SE2) influenced by the built-in potential of the PN junction are detected with the Inlens detector. The shape of the diffusion layer can be visualized through SEM observation of the FIB cross-section. [Analysis methods using EBIC] ■ PEM/OBIRCH defect location identification ■ FIB cross-section processing ■ Low acceleration SEM ■ EBIC analysis ■ TEM *For more details, please refer to the PDF document or feel free to contact us.
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