Defects and Physical Analysis
Defects and Physical Analysis
At Aites, we provide analysis and reliability evaluation services.
31～41 item / All 41 items
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Analysis of good quality overseas manufactured LCD displays
If any issues arise, detailed analysis will also be provided! A simplified analysis for customers considering the introduction of overseas LCDs.
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Case study of failure analysis of oxide-based all-solid-state batteries.
It has high safety and can be used in various environments! Consistent analysis is possible.
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Analysis case of faulty switch contacts
Appearance inspection, electrical inspection, and internal observation using X-rays conducted! Introduction of analysis cases.
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FPD Evaluation and Verification
Evaluate whether there are any potential issues related to characteristics or structure! We propose reliability testing methods and conditions.
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Observation of Conductive Particle Shapes in COG Implementation
Observing the conductive particles from the planar direction and the cross-sectional direction! A case study confirming the degree of deformation.
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Power device failure location / Slice & View three-dimensional reconstruction
By reconstructing a three-dimensional image of the damaged area, observe the overall structure of the destroyed object!
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SiC potential defect expansion inspection device
Reproducing bipolar degradation through UV laser irradiation! Sample evaluation that normally takes 2 months can be completed in 2 days.
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Announcement of the introduction of Talos F200E
Improved resolution for TEM and STEM! Performance significantly enhanced with the capability for EDS analysis using four detectors.
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Specification verification and failure analysis through reliability testing.
Analysis can be performed on samples in various conditions thanks to our unique preprocessing technology!
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Example of failure analysis of chip resistors
We will introduce processing and observation methods using mechanical polishing, SEM, and EDX!
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TEM observation of PL emission sites in SiC.
Identification of defect locations and overall understanding by PL enables detailed observation of defect areas using TEM!
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