OBIRCH analysis of SiC devices using short-wavelength lasers.
Since semiconductors have different physical properties, new methods are required for failure analysis!
Our company conducts OBIRCH analysis of SiC devices using short-wavelength lasers. SiC is a power device with less energy loss compared to conventional Si semiconductors and is attracting attention. However, since its physical properties differ from those of Si semiconductors, new methods are required for failure analysis. In the backside OBIRCH analysis of SiC-SBD using short-wavelength lasers, localized melting damage was induced in the SiC Schottky barrier diode, resulting in the generation of pseudo-leaks. Locations of pseudo-leaks that could not be confirmed in the IR-OBIRCH analysis were clearly observed in the GL-OBIRCH analysis. *For more details, please refer to the PDF materials or feel free to contact us.
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Aites was established in 1993, originating from the quality assurance department of the IBM Japan Yasu office. Based on the technical expertise cultivated through cutting-edge defect analysis and reliability assurance of electronic components at the IBM Japan Yasu office, we have provided various products and services that support the development and manufacturing of semiconductors, displays, organic EL, solar cells, and electronic components to customers both domestically and internationally.