TOF-SIMS analysis of trace contaminants
The analysis sensitivity of TOF-SIMS is high at the ppm level, making it effective for analyzing trace contamination!
This is an introduction to a case where water droplet-shaped contaminants were created on a Si wafer through reproducibility experiments. Measurements were conducted at the same position using SEM-EDX and TOF-SIMS, and a comparison of the image maps was made. In the TOF-SIMS image map, organic substances (CH, CN), Na, and K were detected around the watermark. While no contaminants were observed around the watermark in the optical image, SEM image, and EDX analysis, the TOF-SIMS image map revealed that trace amounts of contaminants were present. *For more details, please refer to the PDF document or feel free to contact us.*
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Dynamic SIMS
"Dynamic SIMS" is a secondary ion mass spectrometry method that can detect trace amounts of all elements (from H to U) in samples with high sensitivity, ranging from ppm to ppb. It allows for qualitative analysis and depth profiling, and additionally enables high-precision quantitative analysis using standard samples (conducted at our partner company's facility). The minimum beam diameter is approximately 30 µm, and it can be further reduced depending on the material.
