Total solutions for the reliability of semiconductor products.
Support for the difficulties in the development and evaluation of components, devices, and materials related to semiconductor products.
【Testing, Evaluation, Analysis】 ●Reliability Testing ■Temperature Cycle Testing ■Thermal Shock Testing ■High-Temperature Storage Testing ■Highly Accelerated Life Testing ■Preconditioning ■Hot Oil Testing ■In-situ Continuous Measurement ■Ion Migration Testing ■Electromigration Testing ■Test Consulting ●Evaluation Testing ■Bond Strength Testing: Pull/Shear Testing ■Mechanical Strength Testing: Vibration/Shock/Fall Testing/Compression Strength/Shear Strength ■ESD/Latch Up/CDM Testing ■Electrical Characteristic Measurement ■Salt Spray Testing ●Analysis ■X-ray Transmission Observation ■Ultrasonic Microscope Observation ■Luminescence Analysis (EMS/IR-OBIRCH) ■Scanning Electron Microscope (SEM) ■Transmission Electron Microscope (TEM) ■Surface Contamination Analysis (TOF-SIMS) ■Foreign Substance Analysis (FT-IR)
basic information
We provide a total solution from sample preparation of a series of processes for semiconductor products to reliability evaluation tests and failure analysis. You can utilize the necessary services as much as you need. A total solution means we support you from sample preparation to evaluation and analysis, addressing the difficulties in developing and evaluating components, devices, and materials related to semiconductor products (such as when evaluation samples cannot be prepared, evaluation methods are unclear, or there is no prior data). 【Sample Preparation】 ● Wafer Process ■ Arrangement of general-purpose TEG ■ Dicing ■ Chip sorting ■ Visual inspection ■ Packaging (chip trays, embossed taping) ● Packaging Process ■ Die bonding ■ Wire bonding ■ Flip chip mounting ■ Bump bonding ■ Package assembly
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Applications/Examples of results
■ IC chip implementation We will carry out sample production from the wafer process to implementation. ■ Reliability evaluation testing Example of In-Situ continuous monitoring... We conduct analysis and failure analysis from various reliability tests.
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Strain measurement of power module package resin.
We would like to present the results of strain measurements conducted by attaching strain gauges and thermometers to the surfaces of power modules, both in the mounted state on a circuit board and in the unmounted state. In the mounted module, a slight delay in temperature change was observed, and correspondingly, the change in strain also appeared to be delayed. This is believed to be due to the slower transfer of heat to the module when it is mounted. At Aites, we conduct temperature cycle tests and temperature-humidity cycle tests, during which we can simultaneously measure the strain occurring in the mounted components. Please feel free to consult with us.
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IOL testing of discrete semiconductors
Our company conducts "IOL testing of discrete semiconductors." We repeatedly turn the power ON/OFF in a room temperature environment, applying stress to the device due to temperature changes caused by the device's own heat generation during power ON. During power OFF (cooling), forced cooling is also performed using a fan. Additionally, before conducting the tests, we use representative samples to make adjustments to reach the test temperature conditions. It is possible to adjust the current/time during heating and the fan capacity/timing during cooling.
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Observation of Conductive Particle Shape in COG Implementation
We will introduce the observation of the shape of conductive particles in COG implementation. ICs and liquid crystal panels are implemented using the COG method with ACF (anisotropic conductive film). A resin ball is used as the core, and a metal layer (such as nickel or gold) for conductivity is deposited on its surface. During connection, the particles deform appropriately to electrically connect the IC and the panel. To confirm the degree of particle deformation and connection status, cross-sectional observations were conducted, revealing that the particle deformation was at a "medium" level, indicating an appropriate degree of deformation. By examining the deformation of conductive particles from both the planar and cross-sectional directions, we can explore the correlation with display defects. Please feel free to contact us for any inquiries regarding panel-related defects.
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Reverse bias test of power devices (up to 2000V)
At Aites Co., Ltd., high-temperature reverse bias testing (HTRB) for evaluating the oxide film and junction of power devices can be applied up to a maximum of 2000V. By monitoring the leakage current during the test, the degradation status of the device can be grasped in real-time. Since the power supply is independent, if one device fails during the test, it will not affect the other devices. Additionally, it is possible to set a failure criterion (current value) and to cut off the power supply to the device deemed faulty at the time of failure judgment. 【Specifications and Service Details】 ■ Test Voltage: Up to a maximum of DC 2000V ■ Applied Current: Up to a maximum of 14mA ■ Number of Test Devices: Up to a maximum of 8 (independent power supply) ■ Compatible Modules: TO-247, TO-220, etc. (other packages require consultation regarding connection methods) ■ Measurement Content: Monitoring of leakage current ■ Temperature Range: Up to a maximum of 200°C (85°C/85% in high temperature and high humidity conditions)