Power device failure location / Slice & View three-dimensional reconstruction

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I will introduce the three-dimensional reconstruction of failure locations using the Slice & View function of FIB-SEM. Continuous SEM images of the structure are obtained, and the resulting images are corrected for positional misalignment between the SEM images and visualized in three dimensions using 3D construction software (Avizo). By combining the position identification technique for cross-sectioning the failure location with the Slice & View function, it is possible to obtain continuous SEM images that retain the defective state and include information before and after the abnormal area.

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Total solution service for power devices
We thoroughly evaluate and verify power devices from every angle.

■Reliability Testing of Power Devices - Power Cycle Testing Constant current 600A max. (Vce=10V) Simultaneous thermal resistance measurement is also possible - 180℃ Compatible Liquid Bath Thermal Shock Testing Temperature range -65℃ to 150℃, -40℃ to 180℃ Liquid medium Galden D02TS/D03 Sample basket (maximum) W320 x H240 x D320 (mm) - Characteristic Evaluation using Power Device Analyzer Maximum voltage 3000V, maximum current 20A Wide compatibility from small components to power devices - Insulation Evaluation Ion Migration Testing Accelerated testing by applying a voltage higher than actual usage conditions in high temperature and high humidity environments Testing to confirm that migration does not occur within the guaranteed lifespan of the power device - High Temperature Reverse Bias/Gate Bias Testing Continuous monitoring of insulation resistance values in high temperature and high humidity environments Number of channels 120 channels ■Analysis and Examination of Power Devices - Failure Analysis of Power Chips - Analysis of Solder Joints - Grain Observation of Al Wires using Ultra-Low Acceleration Special SEM - Non-Destructive Observation of Semiconductor and Package Delamination
Failure analysis of power devices
We will identify and observe the defective areas of power devices such as diodes, MOS-FETs, and IGBTs.

- Package condition: Opened chip, single chip, back surface polishing of wafer state Si chip size: 200um to 15mm - IR-OBIRCH analysis: Supports up to 100mA/10V and 100uA/25V Sensitivity: Several tens of pA Low magnification maximum field of view: 6.5mm square - Emission analysis: Supports up to 2kV Sensitivity: Several nA Low magnification maximum field of view: 6.5mm square - Specific position accuracy: ±0.3um, sample thickness 1.5um to 0.1um - Mechanical polishing SEM observation: Observation of large damage areas, foreign objects, and extensive areas - Diffusion layer observation: Can be observed near defective areas before TEM sample preparation Pre-treatment may be required depending on the structure - FIB-SEM observation: Observation of cracks, shape anomalies, and diffusion layers (up to ×50k) - Cross-sectional TEM observation: Destruction of gate oxide film and dislocations (up to 400k)
Cross-beam FIB cross-sectional observation
It is possible to observe cross-sections while observing FIB processing in real time.

Structural analysis of electronics products manufactured at the nanoscale, such as semiconductor devices, MEMS, and TFT transistors, will be conducted through cross-beam FIB cross-sectional observation. 1) Real-time observation of FIB processing allows for precise targeting of the desired area. 2) Various information can be obtained from the sample using two secondary electron detectors (In-Lens/Chamber SE). 3) The processing FIB and observation low-accelerating SEM are integrated into a single chamber, allowing for observation without exposure to the atmosphere. 4) Diffusion layer: Visualization of the PN interface is possible. The concentration differences of N+/N- and P+/P- are undetectable.
Observation of diffusion layers in semiconductors using FIB-SEM.
Shorter delivery time than his method! Both shape observation using FIB-SEM and diffusion layer observation can be performed!

For more details, please refer to the PDF document or feel free to contact us.
Power semiconductor analysis service
We will handle everything from the evaluation of the diffusion layer to physical analysis/chemical analysis regarding the malfunctioning part!

[Support from fault location identification to physical analysis such as diffusion layer evaluation and crystal structure] ■ Fault location identification using backside illumination/OBIRCH analysis ■ High-precision positioning and FIB processing at the fault location ■ FIB/LV-SEM observation of defective areas and diffusion layer shape evaluation through EBIC analysis ■ Crystal structure observation and elemental analysis through TEM observation *For more details, please refer to the PDF document or feel free to contact us.*
Announcement of the Introduction of FIB-SEM Helios 5 UC
Cross-section production of soft materials has also been realized! 3D reconstruction is possible with Auto Slice & View!

【Overview of FIB-SEM Composite Device】 ■ SEM column mounted vertically and FIB column mounted diagonally ■ Real-time observation of FIB processing using SEM ■ Improved processing position accuracy ■ Observation and analysis possible without exposure to the atmosphere *For more details, please refer to the PDF document or feel free to contact us.