Multi-purpose, high-precision process control [Hot-wall thermal CVD device] ◉ Graphene, carbon nanotubes ◉ ZnO nanowires ◉ Insulating films such as SiO2 Additionally, it can be utilized for a wide range of applications as a hot-wall thermal CVD device.

High-temperature substrate heating mechanism for vacuum thin film processes, used for the development of semiconductors, electronic devices, etc. It can be utilized for various film deposition experiments on silicon substrates, sapphire substrates, compound substrates, and others. Selection of elements and materials according to ultra-high temperature substrate heating conditions (Max 1800°C) for vacuum equipment such as CVD and sputtering is possible. ◉ Compatible with ultra-high vacuum, inert gas, O2, and various process gas atmospheres. ◉ Substrate up/down/rotation mechanism and RF/DC bias application possible. ◉ Selection of elements according to the atmosphere: NiCr, Inconel, Tungsten, Graphite, CC composite, Graphite (SiC coating, PBN coating) CC composite (PG coating) ◉ Various vacuum flange connections: ICF, VF ◉ Thermocouple included ◉ Other options: Motor controller, temperature control unit, transbox.

Low-cost minimum necessary configuration (manual control) tubular furnace, diffusion furnace, and thermal CVD applicable Vertical experimental furnace with manual lift for small substrates from small samples to 3-inch wafers Ideal low-cost vertical furnace for basic experiments in university and corporate research laboratories 【Applications】 ◉ Thermal processing for semiconductors, solar cells, fuel cells, electronic substrates, etc. ◉ Basic experiments: simple thermal processing experiments using vertical tubular furnaces, oxidation diffusion furnaces, LPCVD, etc. 【Main Specifications】 - Maximum furnace temperature: 1200℃, maximum sample temperature: 950℃ - Small sample size: accommodates sizes from a few millimeters to 3-inch wafers - Number of substrates: approximately 1 to 3 sheets - Quartz susceptor with manual lift: includes stop position scale and clamp - Furnace core tube: Φ100 x Φ95 x 470L mm - Lifting: manual rotating handle - Temperature control: PID programmable temperature controller - Thermocouples: 2 pairs of K-type thermocouples x1 (for control, over-temperature), K-type bare wire (for furnace core temperature measurement)

Vacuum Ultra-High Temperature Cylindrical Heater Unit Maximum Temperature 1800℃ (Graphite, C/C Composite) We will manufacture according to your requested specifications. This is a cylindrical heating unit that can be applied in high vacuum for various purposes. We can custom-make it for heating samples in crucibles within the cylindrical heating range, heating metal, ceramic, and wire-shaped samples, depending on the purpose. ◎ Usable Environment: In vacuum, in inert gas, etc. ◎ Heating Element: Graphite, C/C composite heater, SiC coating, PG coating, tungsten, tantalum, etc. ◎ Manufacturing Range: Heater section (up to approximately Φ150 x 100mm), introduction flange, temperature control unit ◎ Applications: Sample heating in various vacuum device process chambers, discharge plasma generation unit thermal electron gun (Lab6), rapid heating of gas supply system piping (liquid rapid vaporization) We also manufacture custom specifications according to other requests. For details, please contact us.

This is a research and development RF/DC magnetron sputtering device. Despite its high performance and multifunctionality, it fits into limited laboratory space with a compact size and easy operation via a 7-inch front touch panel. ● Achievable pressure: 5x10^-5 Pa (*fastest 30 minutes to 1x10^-4 Pa!) ● Film uniformity: ±3% ● Various options: up/down rotation, heater, cathode for magnetic materials, and more ● 3-source cathode + 3 MFC systems, with additional RF/DC power supply, allowing for versatile applications such as multilayer films and simultaneous deposition. - Insulating films - Conductive films - Compounds, etc. 【Main Features】 ◉ Compatible substrates: 2" (up to 3 sources) or 1" (1 source) ◉ 2" cathode x up to 3 sources ◉ Easy operation via touch panel with PLC automatic program control ◉ High-precision APC process control with MFC ◉ Up to 3 MFC systems ◉ USB port for Windows PC connection, capable of creating and saving recipes for up to 1000 layers and 50 films. Live data logging on PC. ◉ Vacuum system: TMP + RP (*dry pump option) ◉ Substrate rotation, vertical lift, and heating (Max 500℃) ◉ Quartz crystal film thickness monitor/controller