Compact, space-saving, and energy-efficient! High-performance ultra-high-temperature experimental furnace for R&D. A compact experimental furnace capable of heating small samples up to 2900°C for R&D purposes. It can be used for various sintering experiments, including ultra-high-temperature heating experiments and new material development in the laboratory. ◆ Main Features ◆ - Space-saving - Includes rotary pump and compressor - Interlock: water cut-off alarm, overheating, gas pressure drop ◆ Basic Specifications ◆ - Power supply specifications: AC200V 75A NFB 50/60HZ (C-500) - Max 2900°C (carbon furnace), 2400°C (metal furnace) - Programmable temperature controller, C thermocouple ◆ Options ◆ - Recorder - Turbo molecular pump - Crucible ◆ Main Applications ◆ - New material development - Fuel cells - Others

Ideal for organic thin film deposition applications such as OLED, OPV, and OTFT. Utilizes low-temperature organic deposition sources with excellent temperature responsiveness/stability and high-temperature deposition sources for metal films. A fully automated R&D vacuum deposition system with easy touch panel operation, excellent operability, and maintainability. An intuitive HMI that allows anyone to operate without complicated procedures. Connects to a PC via USB cable for log saving and creating and storing automatic deposition recipes. ◉ Compact size: 804(W) x 530(D) x 600(H)mm ◉ Weight: 40kg to 70kg (depending on equipment configuration) ◉ Excellent basic performance - Achievable vacuum level: 5x10-5 Pascal - Equipped with a high-performance turbo molecular pump - Φ2 inch or Φ4 inch substrates ◉ Deposition sources - Resistance heating deposition source TE x up to 2 units - Organic deposition source LTE x up to 4 units (if mixed with resistance heating TE, up to 2 units) ◉ 7" touch panel ◉ Continuous deposition - Automatic control of deposition programs - 30 types of registered recipes - High-precision wide-range vacuum gauge ◉ Abundant options - Substrate rotation - Up and down lift with 300mm stroke - Substrate shutter - Dry pump (RP standard)

Tabletop Small-Size Experimental Furnace - Space-Saving, Maximum Operating Temperature 2000℃ ◆ Equipment Configuration ◆ We will propose the desired configuration according to your budget and purpose. (A) Minimum Configuration: Chamber + Temperature Control Unit (B) Above Minimum Configuration (A) + Vacuum Exhaust System (Pump, Gauge, Valve, Vacuum Piping) ◉ Cylindrical Heater: For sample sintering inside the crucible (for solid, powder, granular, and pellet-shaped samples) ◉ Flat Heater: For sintering Φ1" to Φ6" wafers and small chip samples ◆ Basic Specifications ◆ - Heater: C/C Composite (Carbon Furnace), Tungsten (Metal Furnace) - Insulation Material: Graphite Felt, Tungsten/Molybdenum - Temperature Control: Programmable Temperature Controller, C Thermocouple - Achievable Vacuum Level: 1x10-2 Pascal (*for empty furnace) - Power Supply Specifications: AC200V 50/60HZ Three-Phase 6KVA - Cooling Water: 3L/min, 0.4Mpa 25-30℃ ◆ Control Box Specifications ◆ - Programmable Temperature Controller - DC Power Supply Unit or External Transformer Box - Current and Voltage Meters - Heater Circuit Trip Switch - Main Power Switch ◆ Options ◆ - Vacuum Exhaust System - Custom Crucibles and Others

High-Temperature Annealing Equipment for Max 2000℃ Φ6 to 8 inch Wafers, Capable of Small-Scale Production with Multi-Atmosphere Wafer Annealing System ◾️ Max 2000℃ ◾️ Effective Heating Range: Φ6 to Φ8 inch single wafer type or batch type (multi-layer 5 wafer cassette) ◾️ Heater Control: 1 zone or 2 zones (cascade control) ◾️ Heater Material: ・C/C Composite: Φ6 to Φ8 inch ・PG Coating High Purity Graphite: Φ6 to Φ8 inch ◾️ Operating Atmosphere: ・Vacuum (1x10-2Pa), Inert Gas (Ar, N2) ◾️ PLC Semi-Automatic Operation ・Automatic sequence control for vacuum/purge cycle and venting ・Full automatic operation (optional) ・Touch panel operation allows centralized management without dispersed control. ◾️ Process Pressure Control ・APC Control (MFC flow or automatic opening adjustment valve PID loop control) ・Maximum 3 systems of MFC flow automatic control or manual adjustment with flow meter/needle valve ◾️ PLOT screen graph display, CSV data output

◉ Maximum operating temperature Max 2000℃ ◉ PLC semi-automatic control A higher model of the tabletop Mini-BENCH with semi-automatic control Automatically controls each process of "vacuum/purge cycle," "gas replacement," and "venting" Maximum operating temperature 2000℃ Semi-automatic control ultra-high temperature experimental furnace (carbon furnace, tungsten metal furnace) Compact and space-saving experimental furnace ◉ Effective heating range (crucible dimensions) - Planar heater heating range: Φ2 inch to Φ6 inch - Cylindrical heater heating range: Φ30 to Φ80 x Depth Max 100(H) mm ◉ Up to 3 MFC systems for automatic flow control (or manual adjustment) ◉ APC automatic pressure control ◉ Ensures safety during operation Monitors abnormal cooling water, chamber temperature, and overpressure. Made of SUS, the robust water-cooled chamber can be safely used even during continuous operation at maximum temperature. ◉ Compact and space-saving Width 603 x Depth 603 x Height 1,160 mm (*Installed inside rotary pump housing) Various sample heating experiments, such as ultra-high temperature heating of small samples and new material research and development, can be easily performed with simple operations. The main unit is compact yet can be used for research and development in various fields.