アイテス Official site

  • PRODUCT

Reverse bias test of power devices (up to 2000V)

アイテス

アイテス

At Aites Co., Ltd., high-temperature reverse bias testing (HTRB) for evaluating the oxide film and junction of power devices can be applied up to a maximum of 2000V. By monitoring the leakage current during the test, the degradation status of the device can be grasped in real-time. Since the power supply is independent, if one device fails during the test, it will not affect the other devices. Additionally, it is possible to set a failure criterion (current value) and to cut off the power supply to the device deemed faulty at the time of failure judgment. 【Specifications and Service Details】 ■ Test Voltage: Up to a maximum of DC 2000V ■ Applied Current: Up to a maximum of 14mA ■ Number of Test Devices: Up to a maximum of 8 (independent power supply) ■ Compatible Modules: TO-247, TO-220, etc. (other packages require consultation regarding connection methods) ■ Measurement Content: Monitoring of leakage current ■ Temperature Range: Up to a maximum of 200°C (85°C/85% in high temperature and high humidity conditions)

Related Links

Click here for details
 

Related catalog

Reverse bias test of power devices (up to 2000V)

PRODUCT
常時測定信頼性評価試験サービスの表紙画像です

In-Situ Continuous Measurement Reliability Evaluation Testing Service

PRODUCT

Total solutions for the reliability of semiconductor products.

PRODUCT

Total solution service for power devices

PRODUCT

[Data] Ion Migration Evaluation Test

TECHNICAL

Power cycle testing and characteristic evaluation

PRODUCT

Module prototyping and thermal resistance evaluation

PRODUCT

HAST test of power devices

PRODUCT