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Supports IOL tests and power cycle tests for small discrete semiconductors!

For more details, please download the PDF or feel free to contact us.

We conduct environmental testing, as well as non-destructive observation and electrical property measurements.

For more details, please refer to the PDF document or feel free to contact us.

We will handle everything from the evaluation of the diffusion layer to physical analysis/chemical analysis regarding the malfunctioning part!

[Support from fault location identification to physical analysis such as diffusion layer evaluation and crystal structure] ■ Fault location identification using backside illumination/OBIRCH analysis ■ High-precision positioning and FIB processing at the fault location ■ FIB/LV-SEM observation of defective areas and diffusion layer shape evaluation through EBIC analysis ■ Crystal structure observation and elemental analysis through TEM observation *For more details, please refer to the PDF document or feel free to contact us.*

Contracting power cycle tests using a power cycle testing device! We will cooperate in improving quality along with failure analysis and assessment.

【Device Overview】 <Siemens (Mentor) "PWT2400A"> ■ Equipped with 4 units of 600A power supply for heating ■ Equipped with 16 units of -10V to 20V power supply for gates ■ Capable of testing up to 16 channels simultaneously ■ Tj measurement using a method compliant with JESD51-14 ■ Automatic transient thermal resistance measurement during testing ■ Equipped with a cooling plate that supports up to 200℃ ■ Standard fixtures for TO packages are also included ■ Compatible with water-cooled modules *For more details, please refer to the PDF document or feel free to contact us.*

In-Situ Continuous Measurement Reliability Evaluation Testing Service

In-Situ continuous measurement reliability evaluation tests involve applying stress while measuring characteristics to conduct reliability assessments. ● Accurate understanding of failure time is possible In a read-out method where samples are taken from a stress environment at fixed times, failure can only be understood at the timing of the read-out, making it impossible to know the exact time of failure occurrence. In-Situ measurement allows for an accurate understanding of failure time. ● Detection of recoverable failures is possible Recoverable failures can cause significant issues in the market. In most cases, the read-out method makes it nearly impossible to detect these recoverable failures, but In-Situ measurement enables the detection of recoverable failures, allowing for accurate judgment/assessment. ● Monitoring of stress application conditions on samples is possible The stress application status and measurement data can be confirmed in real-time.

Support for the difficulties in the development and evaluation of components, devices, and materials related to semiconductor products.

We provide a total solution from sample preparation of a series of processes for semiconductor products to reliability evaluation tests and failure analysis. You can utilize the necessary services as much as you need. A total solution means we support you from sample preparation to evaluation and analysis, addressing the difficulties in developing and evaluating components, devices, and materials related to semiconductor products (such as when evaluation samples cannot be prepared, evaluation methods are unclear, or there is no prior data). 【Sample Preparation】 ● Wafer Process ■ Arrangement of general-purpose TEG ■ Dicing ■ Chip sorting ■ Visual inspection ■ Packaging (chip trays, embossed taping) ● Packaging Process ■ Die bonding ■ Wire bonding ■ Flip chip mounting ■ Bump bonding ■ Package assembly

We thoroughly evaluate and verify power devices from every angle.

■Reliability Testing of Power Devices - Power Cycle Testing Constant current 600A max. (Vce=10V) Simultaneous thermal resistance measurement is also possible - 180℃ Compatible Liquid Bath Thermal Shock Testing Temperature range -65℃ to 150℃, -40℃ to 180℃ Liquid medium Galden D02TS/D03 Sample basket (maximum) W320 x H240 x D320 (mm) - Characteristic Evaluation using Power Device Analyzer Maximum voltage 3000V, maximum current 20A Wide compatibility from small components to power devices - Insulation Evaluation Ion Migration Testing Accelerated testing by applying a voltage higher than actual usage conditions in high temperature and high humidity environments Testing to confirm that migration does not occur within the guaranteed lifespan of the power device - High Temperature Reverse Bias/Gate Bias Testing Continuous monitoring of insulation resistance values in high temperature and high humidity environments Number of channels 120 channels ■Analysis and Examination of Power Devices - Failure Analysis of Power Chips - Analysis of Solder Joints - Grain Observation of Al Wires using Ultra-Low Acceleration Special SEM - Non-Destructive Observation of Semiconductor and Package Delamination