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We thoroughly evaluate and verify power devices from every angle.

■Reliability Testing of Power Devices - Power Cycle Testing Constant current 600A max. (Vce=10V) Simultaneous thermal resistance measurement is also possible - 180℃ Compatible Liquid Bath Thermal Shock Testing Temperature range -65℃ to 150℃, -40℃ to 180℃ Liquid medium Galden D02TS/D03 Sample basket (maximum) W320 x H240 x D320 (mm) - Characteristic Evaluation using Power Device Analyzer Maximum voltage 3000V, maximum current 20A Wide compatibility from small components to power devices - Insulation Evaluation Ion Migration Testing Accelerated testing by applying a voltage higher than actual usage conditions in high temperature and high humidity environments Testing to confirm that migration does not occur within the guaranteed lifespan of the power device - High Temperature Reverse Bias/Gate Bias Testing Continuous monitoring of insulation resistance values in high temperature and high humidity environments Number of channels 120 channels ■Analysis and Examination of Power Devices - Failure Analysis of Power Chips - Analysis of Solder Joints - Grain Observation of Al Wires using Ultra-Low Acceleration Special SEM - Non-Destructive Observation of Semiconductor and Package Delamination

We will identify and observe the defective areas of power devices such as diodes, MOS-FETs, and IGBTs.

- Package condition: Opened chip, single chip, back surface polishing of wafer state Si chip size: 200um to 15mm - IR-OBIRCH analysis: Supports up to 100mA/10V and 100uA/25V Sensitivity: Several tens of pA Low magnification maximum field of view: 6.5mm square - Emission analysis: Supports up to 2kV Sensitivity: Several nA Low magnification maximum field of view: 6.5mm square - Specific position accuracy: ±0.3um, sample thickness 1.5um to 0.1um - Mechanical polishing SEM observation: Observation of large damage areas, foreign objects, and extensive areas - Diffusion layer observation: Can be observed near defective areas before TEM sample preparation Pre-treatment may be required depending on the structure - FIB-SEM observation: Observation of cracks, shape anomalies, and diffusion layers (up to ×50k) - Cross-sectional TEM observation: Destruction of gate oxide film and dislocations (up to 400k)

TEM (Transmission Electron Microscope) meets a wide range of requirements for observing failure sites of electronic components, length measurements, elemental analysis, crystal structure analysis, and material evaluation.

■The defective area identified by emission luminescence will be observed while thinning it using FIB. ■Using a TEM with an acceleration voltage of 400kV, which has a high electron transmission capability, we can repeatedly perform transmission observation and FIB processing while confining the defective area within the sample thickness to obtain the optimal image. ■The TEM image magnification can be calibrated in advance, allowing for length measurements with an error of less than 2%.

Since semiconductors have different physical properties, new methods are required for failure analysis!

For more details, please refer to the PDF document or feel free to contact us.

Pre-processing of SiC devices → Identification of leakage points → Physical analysis/component analysis handled seamlessly!

For more details, please refer to the PDF document or feel free to contact us.

We will handle everything from the evaluation of the diffusion layer to physical analysis/chemical analysis regarding the malfunctioning part!

[Support from fault location identification to physical analysis such as diffusion layer evaluation and crystal structure] ■ Fault location identification using backside illumination/OBIRCH analysis ■ High-precision positioning and FIB processing at the fault location ■ FIB/LV-SEM observation of defective areas and diffusion layer shape evaluation through EBIC analysis ■ Crystal structure observation and elemental analysis through TEM observation *For more details, please refer to the PDF document or feel free to contact us.*

Cross-section production of soft materials has also been realized! 3D reconstruction is possible with Auto Slice & View!

【Overview of FIB-SEM Composite Device】 ■ SEM column mounted vertically and FIB column mounted diagonally ■ Real-time observation of FIB processing using SEM ■ Improved processing position accuracy ■ Observation and analysis possible without exposure to the atmosphere *For more details, please refer to the PDF document or feel free to contact us.

Improved resolution for TEM and STEM! Performance has been significantly enhanced, allowing for EDS analysis with four detectors.

For more details, please download the PDF or feel free to contact us.