[Analysis Case] Verification of Reduction Treatment for Sn Oxide

Comparison of XPS and computational simulations: Analysis of electronic states from the valence band spectrum.

last updated Mar 13, 2025

[Analysis Case] STEM/EDX and Image Simulation for Crystal Structure Evaluation

The evaluation of the crystal structure can be performed based on the STEM images and the results of atomic composition measurements.

last updated Mar 13, 2025

[Analysis Case] Electronic State Evaluation of Wide Bandgap Semiconductor Dopant Site Identification

Evaluation of microscopic atomic structures is possible through computational simulation.

last updated Mar 13, 2025

Rietveld analysis refers to

Detailed information such as atomic arrangements within the crystal can be obtained from the analysis of measurement data like XRD.

last updated Mar 29, 2023

Solid Analysis New Service Launch (GDMS)

We respond to your request to measure many elements with high sensitivity! Simultaneous analysis of over 70 elements, from major components to trace elements, is possible.

last updated May 15, 2023

[Analysis Case] Measurement of Partial Density of States of GaN

Information about valence bands and gap states can be obtained by element.

last updated Mar 13, 2025

[Analysis Case] Composition and Impurity Analysis of Thin Films, Bulk, and Powder Materials

Quantitative analysis of main components and metallic impurity elements in IGZO using CP-MS.

last updated Mar 13, 2025

[Analysis Case] STEM, EBSD Image Simulation for Polycrystalline Structure Analysis

Evaluation of crystal forms using simulations.

last updated Mar 13, 2025

[Analysis Case] Evaluation of Sn Surface State by XPS

It is possible to calculate the ratio by valence (divalent, tetravalent).

last updated Mar 13, 2025

[Analysis Case] Evaluation of Metal Impurities in the Metal Film and Interface of the Device

Impurities in films and interfaces such as plating can be evaluated using TOF-SIMS.

last updated Jul 18, 2025

[Analysis Case] Evaluation of DC Voltage Dependence of Carriers in Semiconductors

We will introduce an analysis case using Si samples with known carrier concentration!

last updated Oct 03, 2025

[Analysis Case] Precursor Adsorption Simulation in ALD Film Formation

Information on the activation energy and reaction heat during precursor adsorption on the substrate can be obtained!

last updated Sep 30, 2025

Analysis Case: Analysis of Defect Levels in Gallium Nitride

You can obtain various physical property information such as point defect formation energy, charge, and optical transitions!

last updated Oct 03, 2025