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[Analysis Case] Precursor Adsorption Simulation in ALD Film Formation

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[Analysis Case] Precursor Adsorption Simulation in ALD Film Formation

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Information on the activation energy and reaction heat during precursor adsorption on the substrate can be obtained!

Our organization is conducting simulations of precursor adsorption in ALD film deposition using first-principles calculations. ALD (Atomic Layer Deposition) is a film deposition technology that utilizes continuous chemical reactions in the gas phase. It is widely used in the semiconductor field, where fine processing is required, due to its ability to precisely control film thickness, operate at low temperatures, and provide good step coverage. In general, to understand the differences in film deposition rates between different substrates in the slow deposition process of ALD, it is necessary to elucidate the precursor adsorption mechanisms on the substrate. [Measurement Methods and Processing Techniques] ■ Computational Science, AI, Data Analysis *For more details, please download the PDF or feel free to contact us.

Related Link - https://www.mst.or.jp/casestudy/tabid/1318/pdid/57…

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【Product Fields】 ■LSI・Memory ■Oxide Semiconductors *For more details, please download the PDF or feel free to contact us.

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【Analysis Purpose】 ■Structural Evaluation ■Others *For more details, please download the PDF or feel free to contact us.

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[Analysis Case] Precursor Adsorption Simulation in ALD Film Formation Using First-Principles Calculations_C0639

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