【分析事例】LSI・メモリ

【分析事例】LSI・メモリ
LSI・メモリの分析事例をご紹介します
1~30 件を表示 / 全 129 件
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[Analysis Case] Evaluation of the Diffusion Layer Distribution of a Transistor (MOSFET)
Evaluation of diffusion layers in specific areas using SCM.
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[Analysis Case] Structural Observation of the Hall Side Wall ONO Film
Planar TEM observation of specific areas using the FIB method.
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[Analysis Case] High-Precision Analysis of Ultra-Shallow Dopant Distribution Using SIMS
Can be evaluated with high reproducibility.
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[Analysis Case] Investigation of Contamination Causes on Silicon Wafers
Evaluation of contamination originating from gloves
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[Analysis Case] Evaluation of the Surface Silanol Groups
Quantitative evaluation of silanol groups is possible with TOF-SIMS.
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[Analysis Case] Analysis of H termination on Si surface
Qualitative and relative comparison of SiH and states on the Si surface due to differences in processing.
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[Analysis Case] Evaluation of Ultra-Shallow Implant Profiles by SIMS
Evaluation of dopant distribution and junctions is possible even in extremely shallow regions.
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[Analysis Case] Distortion Analysis in the Field of Element Separation
NBD: Strain analysis of micro-regions using Nano Beam Diffraction.
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[Analysis Case] Cross-sectional Observation of TEM/SEM Organic EL and Gate Oxide Film
Low-acceleration STEM observation allows for contrast even in low-density membranes.
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[Analysis Case] Discrimination between Anatase and Rutile Types of Titanium Dioxide
TEM-EELS enables elemental identification and chemical state analysis in micro-regions.
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[Analysis Case] Evaluation of B Penetration Amount from SSDP-SIMS Gate to Substrate
Measurement avoiding the effects of surface irregularities and high concentration layers using SSDP-SIMS.
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[Analysis Case] IGZO
Case studies of XRD and XRR analysis of oxide semiconductors.
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[Analysis Case] Investigation of Causes of Peeling in Plating and Coating
Identification of contamination sources on the cleavage surface using TOF-SIMS.
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[Analysis Case] Component Identification of Foreign Substances Considering Thermal History
Proposal for the use of standard samples with aligned thermal history.
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[Analysis Case] Depth Direction Analysis of Polyimide Components
Evaluation of the depth direction of surface modification layers of polymers, resins, and films using TOF-SIMS is possible.
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[Analysis Case] Evaluation of Film-Forming Component Encroachment on the Back Surface of the Wafer
Quantitative evaluation of metal components is possible near the bevel area.
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[Analysis Case] Evaluation of Crystal Structure by Micro XRD Analysis
XRD measurements in micro areas are possible.
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[Analysis Case] Evaluation of Silicon (Si) Oxide Film State
It is possible to capture molecular information of inorganic substances in the depth direction using TOF-SIMS.
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[Analysis Case] Distribution and State Evaluation of OH on Aluminum (Al) Surface
It is possible to capture molecular information of inorganic substances in the depth direction using TOF-SIMS.
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[Analysis Case] Evaluation of Si Natural Oxidation Film Thickness
Estimation of film thickness using the average free path of photoelectrons.
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[Analysis Case] SIMS Measurement of Specially Shaped Samples
Analysis is possible even for special shapes through innovative fixing methods.
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[Analysis Case] Evaluation of Foreign Substances on the Surface of 300mm Wafers
The coordinate linkage function with the foreign object inspection device allows for the evaluation of specific foreign objects.
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[Analysis Case] Evaluation of the Cleaning Effect of Organic Ingredients
You can measure the 300mm wafer as it is.
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Analysis case: Evaluation of the in-plane distribution of additives in solder alloys.
Capable of highly sensitive evaluation of the distribution of additives at the ppm level.
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Quantification of Hydrogen Bonding States in SiN Films
Quantification of Si-H and N-H in SiN films using infrared absorption method.
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Evaluation of the ionization potential of semiconductors
UPS: Ultraviolet Photoelectron Spectroscopy
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Analysis of crystal grains below 30nm using the EBSD method.
EBSD: Electron Backscatter Diffraction
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Interference peak removal process in quantitative analysis
X-ray photoelectron spectroscopy (XPS)
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Regarding the depth conversion of SRA
SRA: Spread Resistance Measurement Method
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About the concentration conversion of SRA.
SRA: Spread Resistance Measurement Method
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