[Analysis Case] Structural Observation of the Hall Side Wall ONO Film
Planar TEM observation of specific areas using the FIB method.
By using FIB technology that allows for processing at the nanoscale, it is possible to perform planar TEM observations of specific areas. This enables the confirmation of the ONO three-layer structure (silicon oxide film / silicon nitride film / silicon oxide film) of the capacitor insulating film on the sidewall of the hole, which is difficult to verify through cross-sectional observations.
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For detailed data, please refer to the catalog.
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Applications/Examples of results
Analysis of LSI and memory.