[Analysis Case] Contamination Assessment of Si Wafer Bevel Area

It is possible to evaluate both metal components and organic components simultaneously.

last updated Mar 13, 2025

[Analysis Case] Evaluation of the Diffusion Layer of Power Transistors (DMOSFET)

You can understand the positional relationship between the gate layer, source layer, and body layer.

last updated Mar 13, 2025

[Analysis Case] Investigation of Defective Bipolar Transistors (IGBT)

Identification of failure locations using an emission microscope with a high voltage power supply.

last updated Mar 13, 2025

[Analysis Case] Breakdown Observation of 600V Rated SiC Diode

Consistent analysis from preprocessing to luminescence location identification.

last updated Mar 13, 2025

[Analysis Case] SCM Analysis of SiC Planer Power MOS

You can visualize the diffusion layer structure of SiC devices.

last updated Mar 13, 2025

[Analysis Case] Depth Profile Analysis of Dopant Elements in SiC Using SIMS

It is possible to evaluate the depth distribution of B, Al, N, P, and As in SiC with high sensitivity.

last updated Mar 13, 2025

[Analysis Case] Evaluation of SiC Power MOSFET Dopants by SIMS

Imaging SIMS enables the evaluation of localized elements.

last updated Mar 13, 2025

[Analysis Case] SiC by SIMS

Imaging SIMS allows for the evaluation of localized elements.

last updated Mar 13, 2025

[Analysis Case] Photoluminescence Mapping Measurement of SiC Diodes

Detection cases of stacking faults in SiC.

last updated Mar 13, 2025

[Analysis Case] Dopant Investigation in NPT-IGBT Using SIMS

Evaluation of localized elements is possible with imaging SIMS.

last updated Mar 13, 2025

[Analysis Case] Evaluation of Gate Oxide Film on SiC Substrate

Evaluate film thickness, density, and bonding state.

last updated Mar 13, 2025

[Analysis Case] SSDP-SIMS Analysis on SiC Substrates

It is possible to obtain the dopant concentration profile from the SiC substrate side.

last updated Mar 13, 2025

[Analysis Case] Depth Profile Analysis of Dopant Elements in SiC Using SIMS 2

Measurements will be taken according to the analysis conditions suited to the purpose.

last updated Mar 13, 2025

[Analysis Case] Composite Evaluation of the Active Layer of SiC Power MOSFETs

Evaluate the shape of the active layer and the dopant.

last updated Mar 13, 2025

[Analysis Case] Evaluation of Contact Electrodes for SiC Power MOSFETs

Identification of the interface between contact electrodes and SiC layer, and evaluation of elemental distribution.

last updated Mar 13, 2025

[Analysis Case] Lock-in Thermal Analysis of Package Products

Non-destructive analysis of leakage points in Si-based power diodes.

last updated Mar 13, 2025

[Analysis Case] Evaluation Case of Hydrogen Injection Sample using SRA/SIMS

Introduction to Case Studies on Carrier Concentration Analysis in Lifetime Control Samples

last updated Mar 13, 2025

[Analysis Case] Evaluation of Bonding State and Film Thickness of SiC Surface

In addition to detailed condition assessment, film thickness calculation is possible.

last updated Mar 13, 2025

[Analysis Case] Preprocessing Technology for Specific Areas of Wafers and Chips

We will sample only the target area and produce samples without breaking the wafer.

last updated Mar 13, 2025

[Analysis Case] Ultra-high Sensitivity Measurement of Impurities in Silicon Using SIMS

We will enhance the sensitivity and evaluate the concentration distribution at the ppt level.

last updated Mar 13, 2025

[Analysis Case] SIMS Analysis of Compound Layered Structure Samples

Analysis is possible after selectively removing the compound layer through preprocessing.

last updated Mar 13, 2025

[Analysis Case] Composition Analysis of GaN-based LED Structures using SIMS

Capable of evaluating the composition of the main elemental components of GaN-based LEDs in the depth direction.

last updated Mar 13, 2025

[Analysis Case] Composition and Thickness Evaluation of Ultra-Thin SiON Films

Estimation of film thickness using the average free path of photoelectrons.

last updated Mar 13, 2025

[Analysis Case] Evaluation of Ultra-Shallow Implant Profiles by SIMS

Evaluation of dopant distribution and junctions is possible even in extremely shallow regions.

last updated Mar 13, 2025

[Analysis Case] Evaluation of Film-Forming Component Encroachment on the Back Surface of the Wafer

Quantitative evaluation of metal components is possible near the bevel area.

last updated Mar 13, 2025

[Analysis Case] Evaluation of Si Natural Oxidation Film Thickness

Estimation of film thickness using the average free path of photoelectrons.

last updated Mar 13, 2025

[Analysis Case] SIMS Measurement of Specially Shaped Samples

Analysis is possible even for special shapes through innovative fixing methods.

last updated Mar 13, 2025

[Analysis Case] Diffusion Evaluation of Ga and Al in Si Substrate using SSDP-SIMS

Measurement avoiding the influence of high concentration layers using SSDP-SIMS.

last updated Mar 13, 2025

[Analysis Case] Evaluation of Element Distribution in Textured GaN-based LEDs

Even with a structure that has uneven surfaces, depth distribution evaluation is possible through flattening processing.

last updated Mar 13, 2025

[Analysis Case] Depth Profile Concentration Analysis of Impurities in GaN-based LEDs Using SIMS

Measurements will be taken under analysis conditions suited to the purpose.

last updated Mar 13, 2025